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Michael Manfra
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Scaling of Majorana zero-bias conductance peaks
F Nichele, ACC Drachmann, AM Whiticar, ECT O’Farrell, HJ Suominen, ...
Physical Review Letters 119 (13), 136803, 2017
3602017
Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes
JWP Hsu, MJ Manfra, DV Lang, S Richter, SNG Chu, AM Sergent, ...
Applied Physics Letters 78 (12), 1685-1687, 2001
3482001
Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates
JWP Hsu, MJ Manfra, RJ Molnar, B Heying, JS Speck
Applied Physics Letters 81 (1), 79-81, 2002
3202002
Poole-Frenkel electron emission from the traps in AlGaN/GaN transistors
O Mitrofanov, M Manfra
Journal of Applied Physics 95 (11), 6414-6419, 2004
2282004
Evidence of topological superconductivity in planar Josephson junctions
A Fornieri, AM Whiticar, F Setiawan, E Portolés, ACC Drachmann, ...
Nature 569, 89-92, 2019
2202019
Noise suppression using symmetric exchange gates in spin qubits
F Martins, FK Malinowski, PD Nissen, E Barnes, S Fallahi, GC Gardner, ...
Physical Review Letters 116 (11), 116801, 2016
2112016
Cryogenic control architecture for large-scale quantum computing
JM Hornibrook, JI Colless, IDC Lamb, SJ Pauka, H Lu, AC Gossard, ...
Physical Review Applied 3 (2), 024010, 2015
1932015
High-fidelity entangling gate for double-quantum-dot spin qubits
JM Nichol, LA Orona, H SP, F S, G GC, M MJ, Y A
NPJ Quantum Information 3, DOI: 10.1038/s41534-016-0003-1, 2017
1832017
Direct observation of anyonic braiding statistics
J Nakamura, S Liang, G G.C., MJ Manfra
Nature Physics 16, 931-936, 2020
1692020
Collective non-perturbative coupling of 2D electrons with high-quality-factor terahertz cavity photons
Q Zhang, M Lou, X Li, JL Reno, W Pan, JD Watson, MJ Manfra, J Kono
Nature Physics 12 (11), 1005-1011, 2016
1642016
Mechanisms of gate lag in GaN/AlGaN/GaN high electron mobility transistors
O Mitrofanov, M Manfra
Superlattices and Microstructures 34 (1-2), 33-53, 2003
1562003
Nonconventional odd-denominator fractional quantum hall states in the second landau level
A Kumar, GA Csáthy, MJ Manfra, LN Pfeiffer, KW West
Physical Review Letters 105 (24), 246808, 2010
1512010
Gallium nitride is biocompatible and non-toxic before and after functionalization with peptides
SA Jewett, MS Makowski, B Andrews, A Ivanisevic, MJ Manfra
Acta Biomaterialia, 2011
1452011
Effect of growth stoichiometry on the electrical activity of screw dislocations in GaN films grown by molecular-beam epitaxy
JWP Hsu, MJ Manfra, SNG Chu, CH Chen, LN Pfeiffer, RJ Molnar
Applied Physics Letters 78 (25), 3980-3982, 2001
1442001
Molecular beam epitaxy of ultra-high quality AlGaAs/GaAs heterostructures: Enabling physics in low-dimensional electronic systems
MJ Manfra
Annu. Rev. Condens. Matter Phys. 5, 347-73, 2014
1432014
High-mobility AlGaN/GaN heterostructures grown by molecular-beam epitaxy on GaN templates prepared by hydride vapor phase epitaxy
MJ Manfra, LN Pfeiffer, KW West, HL Stormer, KW Baldwin, JWP Hsu, ...
Applied Physics Letters 77 (18), 2888-2890, 2000
1282000
Superconducting gatemon qubit based on a proximitized two-dimensional electron gas
L Casparis, MR Connolly, M Kjaergaard, NJ Pearson, A Kringhøj, ...
Nature Nanotechnology 13, 915-919, 2018
1202018
Edge transport in the trivial phase of InAs/GaSb
F Nichele, HJ Suominen, M Kjaergaard, CM Marcus, E Sajadi, JA Folk, ...
New Journal of Physics 18 (8), 083005, 2016
1142016
Superradiant decay of cyclotron resonance of two-dimensional electron gases
Q Zhang, T Arikawa, E Kato, JL Reno, W Pan, JD Watson, MJ Manfra, ...
Physical Review Letters 113 (4), 047601, 2014
1142014
20–80nm channel length InGaAs gate-all-around nanowire MOSFETs with EOT= 1.2 nm and lowest SS= 63mV/dec
JJ Gu, XW Wang, H Wu, J Shao, AT Neal, MJ Manfra, RG Gordon, PD Ye
2012 International Electron Devices Meeting, 27.6. 1-27.6. 4, 2012
1102012
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