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FUMINORI ITO
FUMINORI ITO
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Title
Cited by
Cited by
Year
La–silicate gate dielectrics fabricated by solid phase reaction between La metal and underlayers
H Watanabe, N Ikarashi, F Ito
Applied physics letters 83 (17), 3546-3548, 2003
662003
Carbon-nanotube-based triode-field-emission displays using gated emitter structure
F Ito, Y Tomihari, Y Okada, K Konuma, A Okamoto
IEEE electron device letters 22 (9), 426-428, 2001
592001
Improving reliability of copper dual-damascene interconnects by impurity doping and interface strengthening
M Tada, M Abe, N Furutake, F Ito, T Tonegawa, M Sekine, Y Hayashi
IEEE transactions on electron devices 54 (8), 1867-1877, 2007
342007
Comprehensive chemistry designs in porous SiOCH film stacks and plasma etching gases for damageless Cu interconnects in advanced ULSI devices
Y Hayashi, H Ohtake, J Kawahara, M Tada, S Saito, N Inoue, F Ito, ...
IEEE transactions on semiconductor manufacturing 21 (3), 469-480, 2008
272008
Second-harmonic generation from /Si(111) interfaces
F Ito, H Hirayama
Physical Review B 50 (15), 11208, 1994
261994
Electron emission from single-walled carbon nanotubes with sharpened bundles
F Ito, K Konuma, A Okamoto
Journal of Applied Physics 89 (12), 8141-8145, 2001
222001
Impact of barrier metal sputtering on physical and chemical damages in low-k SiOCH films with various hydrocarbon content
N Inoue, N Furutake, F Ito, H Yamamoto, T Takeuchi, Y Hayashi
Japanese journal of applied physics 47 (4S), 2468, 2008
212008
Feasibility study of 45-nm-node scaled-down Cu interconnects with molecular-pore-stacking (MPS) SiOCH films
M Tada, H Ohtake, F Ito, M Narihiro, T Taiji, Y Kasama, T Takeuchi, K Arai, ...
IEEE transactions on electron devices 54 (4), 797-806, 2007
142007
Robust porous SiOCH/Cu interconnects with ultrathin sidewall protection liners
M Tada, T Tamura, F Ito, H Ohtake, M Narihiro, M Tagami, M Ueki, ...
IEEE transactions on electron devices 53 (5), 1169-1179, 2006
142006
Improvement of mechanical properties of porous SiOCH films by post-cure treatments
F Ito, T Takeuchi, Y Hayashi
Advanced Metallization Conference 2005(AMC 2005), 291-296, 2006
142006
Effects of thermal annealing on emission characteristics and emitter surface properties of a Spindt-type field emission cathode
F Ito, K Konuma, A Okamoto, A Yano
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1998
141998
Robust Cu dual damascene interconnects with porous SiOCH films fabricated by low-damage multi-hard-mask etching technology
H Ohtake, M Tagami, M Tada, M Ueki, M Abe, S Saito, F Ito, Y Hayashi
IEEE transactions on semiconductor manufacturing 19 (4), 455-464, 2006
122006
Moisture uptake impact on damage layer of porous low-k film in 80nm-pitched Cu interconnects
M Tagami, A Ogino, H Miyajima, H Shobha, FH Baumann, F Ito, ...
ECS Transactions 41 (7), 405, 2011
102011
Robust low oxygen content Cu alloy for scaled-down ULSI interconnects based on metallurgical thermodynamic principles
Y Hayashi, M Abe, M Tada, M Narihiro, M Tagami, M Ueki, N Inoue, F Ito, ...
IEEE transactions on electron devices 56 (8), 1579-1587, 2009
82009
Effect of hydrogen annealing on second‐harmonic generation from SiO2/Si(111) interfaces
H Hirayama, F Ito, K Watanabe
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 13 (3 …, 1995
81995
Porous Low-k Impacts on Performance of Advanced LSI Devices with GHz Operations
M Tada, N Inoue, J Kawahara, H Yamamoto, F Ito, T Fukai, M Ueki, ...
Japanese Journal of Applied Physics 48 (4S), 04C031, 2009
72009
Effects of thermal annealing on emission characteristics and surface properties of field emitter arrays
F Ito, K Konuma, A Okamoto, A Yano, S Miyano
Journal of applied physics 82 (12), 6267-6272, 1997
41997
A Robust Low-/Cu Dual Damascene Interconnect (DDI) With Sidewall Protection Layer (SPL)
M Ueki, M Tada, M Tagami, M Narihiro, F Ito, Y Hayashi
IEEE transactions on device and materials reliability 11 (1), 98-105, 2011
32011
Advanced Metallization for ULSI Applications
J Koike, E Kondoh
Japan Society of Applied Physics, 2013
22013
Photo-stimulated desorption from porous low-k films by UV cure treatments with various wavelength
F Ito, T Takeuchi, Y Hayashi
Advanced Metallization Conference 2006(AMC 2006), 295-300, 2007
22007
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