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Michael E. Givens, Ph.D.
Michael E. Givens, Ph.D.
Senior Director & Executive Technologist, ASM Corporate R&D, Leuven, Belgium
Verified email at asm.com
Title
Cited by
Cited by
Year
Sublimation bed employing carrier gas guidance structures
EJ Shero, ME Givens, R Schmidt
US Patent 7,122,085, 2006
5082006
System and method for gas-phase sulfur passivation of a semiconductor surface
F Tang, ME Givens, Q Xie, P Raisanen
US Patent 9,558,931, 2017
4612017
Semiconductor device dielectric interface layer
P Raisanen, M Givens, M Verghese
US Patent 8,728,832, 2014
4452014
Systems and methods for dynamic semiconductor process scheduling
KR Lawson, ME Givens
US Patent 9,659,799, 2017
4402017
Semiconductor device dielectric interface layer
P Raisanen, M Givens, M Verghese
US Patent 9,177,784, 2015
4372015
Method for forming metal chalcogenide thin films on a semiconductor device
F Tang, ME Givens, JH Woodruff, Q Xie, JW Maes
US Patent 9,711,396, 2017
3792017
System and method for gas-phase passivation of a semiconductor surface
F Tang, ME Givens, Q Xie, P Raisanen
US Patent 9,905,492, 2018
3772018
Sulfur-containing thin films
SP Haukka, F Tang, M Givens, JW Maes, Q Xie
US Patent 9,245,742, 2016
3752016
System and method for gas-phase passivation of a semiconductor surface
F Tang, ME Givens, Q Xie, X Jiang, P Raisanen, P Calka
US Patent 9,911,676, 2018
3742018
Sulfur-containing thin films
SP Haukka, F Tang, M Givens, JW Maes, Q Xie
US Patent 9,478,419, 2016
3742016
Methods for forming a semiconductor device and related semiconductor device structures
Q Xie, ME Givens, P Raisanen, JW Maes
US Patent 10,643,904, 2020
3732020
Structures including metal carbide material, devices including the structures, and methods of forming same
P Raisanen, M Givens, EJ Shero
US Patent 10,458,018, 2019
3702019
Methods for semiconductor passivation by nitridation
Q Xie, F Tang, M Givens, P Raisanen, JW Maes
US Patent 9,711,350, 2017
3682017
Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
P Raisanen, ME Givens
US Patent 10,229,833, 2019
3652019
Method for passivating a surface of a semiconductor and related systems
X Jiang, F Tang, Q Xie, P Calka, SH Jung, ME Givens
US Patent 10,410,943, 2019
3642019
Deposition of metal borides
P Raisanen, E Shero, S Haukka, RB Milligan, ME Givens
US Patent 10,087,522, 2018
3642018
Source/drain performance through conformal solid state doping
Q Xie, D De Roest, J Woodruff, ME Givens, JW Maes, T Blanquart
US Patent 10,032,628, 2018
3642018
Implementing atomic layer deposition for gate dielectrics
F Tang, X Jiang, Q Xie, ME Givens, JW Maes, J Chen
US Patent App. 15/286,503, 2017
3642017
Deposition of metal borides and silicides
P Raisanen, E Shero, S Haukka, RB Milligan, ME Givens
US Patent 10,865,475, 2020
3632020
Reaction chamber
M Givens, M Goodman, M Hawkins, B Halleck, H Terhorst
US Patent App. 12/613,436, 2010
3632010
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