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Momme Winkelnkemper
Momme Winkelnkemper
Dr. Türck Ingenieurbüro GmbH
Verified email at tuerck-ing.de - Homepage
Title
Cited by
Cited by
Year
Consistent set of band parameters for the group-III nitrides AlN, GaN, and InN
P Rinke, M Winkelnkemper, A Qteish, D Bimberg, J Neugebauer, ...
Physical Review B 77 (7), 075202, 2008
4812008
Impact of size, shape, and composition on piezoelectric effects and electronic properties of quantum dots
A Schliwa, M Winkelnkemper, D Bimberg
Physical Review B 76 (20), 205324, 2007
3502007
Interrelation of structural and electronic properties in quantum dots using an eight-band model
M Winkelnkemper, A Schliwa, D Bimberg
Physical Review B 74 (15), 155322, 2006
1992006
Band gap and band parameters of InN and GaN from quasiparticle energy calculations based on exact-exchange density-functional theory
P Rinke, M Scheffler, A Qteish, M Winkelnkemper, D Bimberg, ...
Applied Physics Letters 89 (16), 2006
1992006
In (Ga) As/GaAs quantum dots grown on a (111) surface as ideal sources of entangled photon pairs
A Schliwa, M Winkelnkemper, A Lochmann, E Stock, D Bimberg
Physical Review B 80 (16), 161307, 2009
1742009
Few-particle energies versus geometry and composition of self-organized quantum dots
A Schliwa, M Winkelnkemper, D Bimberg
Physical Review B 79 (7), 075443, 2009
1312009
Band parameters and strain effects in ZnO and group-III nitrides
Q Yan, P Rinke, M Winkelnkemper, A Qteish, D Bimberg, M Scheffler, ...
Semiconductor science and technology 26 (1), 014037, 2010
1022010
Control of fine-structure splitting and excitonic binding energies in selected individual InAs∕ GaAs quantum dots
R Seguin, A Schliwa, TD Germann, S Rodt, K Pötschke, A Strittmatter, ...
Applied Physics Letters 89 (26), 2006
922006
Strain effects and band parameters in MgO, ZnO, and CdO
Q Yan, P Rinke, M Winkelnkemper, A Qteish, D Bimberg, M Scheffler, ...
Applied Physics Letters 101 (15), 2012
882012
Exciton fine-structure splitting in GaN/AlN quantum dots
C Kindel, S Kako, T Kawano, H Oishi, Y Arakawa, G Hönig, ...
Physical Review B 81 (24), 241309, 2010
702010
Polarized emission lines from A-and B-type excitonic complexes in single InGaN/GaN quantum dots
M Winkelnkemper, R Seguin, S Rodt, A Schliwa, L Reissmann, ...
Journal of applied physics 101 (11), 2007
632007
Phys. Rev. B: Condens. Matter Mater. Phys.
P Rinke, M Winkelnkemper, A Qteish, D Bimberg, J Neugebauer, ...
562008
GaN/AlN quantum dots for single qubit emitters
M Winkelnkemper, R Seguin, S Rodt, A Hoffmann, D Bimberg
Journal of Physics: Condensed Matter 20 (45), 454211, 2008
382008
Spectroscopic access to single-hole energies in InAs/GaAs quantum dots
E Siebert, T Warming, A Schliwa, E Stock, M Winkelnkemper, S Rodt, ...
Physical Review B 79 (20), 205321, 2009
252009
Origin of the broad lifetime distribution of localized excitons in InGaN/GaN quantum dots
M Winkelnkemper, M Dworzak, TP Bartel, A Strittmatter, A Hoffmann, ...
physica status solidi (b) 245 (12), 2766-2770, 2008
232008
Doping modulation in GaN imaged by cross-sectional scanning tunneling microscopy
H Eisele, L Ivanova, S Borisova, M Dähne, M Winkelnkemper, P Ebert
Applied Physics Letters 94 (16), 2009
172009
Polarized emission lines from single InGaN/GaN quantum dots: Role of the valence-band structure of wurtzite Group-III nitrides
M Winkelnkemper, R Seguin, S Rodt, A Schliwa, L Reissmann, ...
Physica E: Low-dimensional Systems and Nanostructures 40 (6), 2217-2219, 2008
112008
Theory of excitons in InGaAs/GaAs quantum dots
A Schliwa, M Winkelnkemper
Semiconductor Nanostructures, 139-164, 2008
102008
Electronic structure of nitride-based quantum dots
M Winkelnkemper
42008
Photon pair source and method for its production
M Winkelnkemper, A Schliwa, D Bimberg
US Patent 8,559,479, 2013
2013
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