Manveer S Munde
Manveer S Munde
Verified email at physik.uni-marburg.de
Title
Cited by
Cited by
Year
Nanoscale Transformations in Metastable, Amorphous, Silicon‐Rich Silica
A Mehonic, M Buckwell, L Montesi, MS Munde, D Gao, S Hudziak, ...
Advanced Materials 28 (34), 7486-7493, 2016
382016
Intrinsic resistance switching in amorphous silicon oxide for high performance SiOx ReRAM devices
A Mehonic, MS Munde, WH Ng, M Buckwell, L Montesi, M Bosman, ...
Microelectronic Engineering 178, 98-103, 2017
342017
Intrinsic resistance switching in amorphous silicon suboxides: the role of columnar microstructure
MS Munde, A Mehonic, WH Ng, M Buckwell, L Montesi, M Bosman, ...
Scientific reports 7 (1), 1-7, 2017
272017
Diffusion and aggregation of oxygen vacancies in amorphous silica
MS Munde, DZ Gao, AL Shluger
Journal of Physics: Condensed Matter 29 (24), 245701, 2017
232017
Microscopic and spectroscopic analysis of the nature of conductivity changes during resistive switching in silicon‐rich silicon oxide
M Buckwell, L Montesi, A Mehonic, O Reza, L Garnett, M Munde, ...
physica status solidi (c) 12 (1‐2), 211-217, 2015
202015
Silica: Nanoscale Transformations in Metastable, Amorphous, Silicon‐Rich Silica (Adv. Mater. 34/2016)
A Mehonic, M Buckwell, L Montesi, MS Munde, D Gao, S Hudziak, ...
Advanced Materials 28 (34), 7549-7549, 2016
82016
Mechanisms of oxygen vacancy aggregation in SiO2 and HfO2
DZ Gao, J Strand, MS Munde, AL Shluger
Frontiers in Physics 7, 43, 2019
62019
The interplay between structure and function in redox-based resistance switching
AJ Kenyon, MS Munde, WH Ng, M Buckwell, D Joksas, A Mehonic
Faraday discussions 213, 151-163, 2019
62019
In situ transmission electron microscopy of resistive switching in thin silicon oxide layers
M Duchamp, V Migunov, AH Tavabi, A Mehonic, M Buckwell, M Munde, ...
Resolution and Discovery 1 (1), 27-33, 2016
62016
Visualization of Light Elements using 4D STEM: The Layered‐to‐Rock Salt Phase Transition in LiNiO2 Cathode Material
S Ahmed, M Bianchini, A Pokle, MS Munde, P Hartmann, T Brezesinski, ...
Advanced Energy Materials, 2001026, 2020
2020
Effect of the interface morphology on the lateral electron transport in (001) GaP/Si heterostructures
L Ostheim, PJ Klar, Y Moryson, M Rohnke, A Beyer, M Volk, M Munde, ...
Journal of Applied Physics 126 (21), 215704, 2019
2019
Modeling of Diffusion and Incorporation of Interstitial Oxygen Ions at the TiN/SiO2 Interface
J Cottom, A Bochkarev, E Olsson, K Patel, M Munde, J Spitaler, MN Popov, ...
ACS applied materials & interfaces 11 (39), 36232-36243, 2019
2019
(Invited) Resistance Switching in Silicon-Rich Silica: Electronic, Structural and Photonic Perspectives
AJ Kenyon, A Mehonic, M Munde, WH Ng, M Buckwell, L Montesi, ...
232nd ECS Meeting (October 1-5, 2017),, 2017
2017
Oxygen Dynamics in Amorphous Silicon Suboxide Resistive Switches
MS Munde
UCL (University College London), 2017
2017
Structural insights into resistance switching in silicon oxide: electronic and photonic perspectives
AJ Kenyon, A Mehonic, M Buckwell, M Munde, WH Ng, L Montesi, ...
Solid State Ionics 2017, 2017
2017
Intrinsic Bulk Resistance Switching in Silicon Oxide
AJ Kenyon, A Mehonic, M Buckwell, M Munde, WH Ng, L Montesi, ...
Cine RRAM 2017, 2017
2017
Impact of columnar microstructure on resistive switching behaviour of amorphous silicon suboxide films
M Munde, A Mehonic, M Buckwell, L Montesi, M Bosman, AJ Kenyon
E-MRS Spring meeting 2017, 2017
2017
Influence of Interface Roughness on Resistance Switching in Undoped Amorphous Silicon Oxide
A Mehonic, M Munde, WH Ng, M Buckwell, L Montesi, M Bosman, ...
MEMRISYS 2017, 2017
2017
Silicon Oxide Reram Device
A Mehonic, M Buckwell, L Montesi, M Munde, RJ Chater, DS McPhail, ...
PRiME 2016/230th ECS Meeting (October 2-7, 2016), 2016
2016
Structural changes and conductive filament formation in silicon oxide during resistance switching
AJ Kenyon, A Mehonic, L Montesi, M Buckwell, M Munde, D Gao, ...
CIMTEC 2016, 2016
2016
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Articles 1–20