K Radhakrishnan
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Titanium doped cupric oxide for photovoltaic application
S Masudy-Panah, K Radhakrishnan, HR Tan, R Yi, TI Wong, GK Dalapati
Solar energy materials and solar cells 140, 266-274, 2015
Grey scale structures formation in SU-8 with e-beam and UV
V Kudryashov, XC Yuan, WC Cheong, K Radhakrishnan
Microelectronic Engineering 67, 306-311, 2003
Reactive sputter deposition and characterization of tantalum nitride thin films
K Radhakrishnan, NG Ing, R Gopalakrishnan
Materials Science and Engineering: B 57 (3), 224-227, 1999
p‐CuO/n‐Si heterojunction solar cells with high open circuit voltage and photocurrent through interfacial engineering
S Masudy‐Panah, GK Dalapati, K Radhakrishnan, A Kumar, HR Tan, ...
Progress in Photovoltaics: Research and Applications 23 (5), 637-645, 2015
Electrical and electrochemical characterization of Li2O: P2O5: Nb2O5-based solid electrolytes
BVR Chowdari, K Radhakrishnan
Journal of non-crystalline solids 110 (1), 101-110, 1989
Temperature dependent microwave performance of AlGaN/GaN high-electron-mobility transistors on high-resistivity silicon substrate
S Arulkumaran, ZH Liu, GI Ng, WC Cheong, R Zeng, J Bu, H Wang, ...
Thin Solid Films 515 (10), 4517-4521, 2007
Reduction of Cu-rich interfacial layer and improvement of bulk CuO property through two-step sputtering for p-CuO/n-Si heterojunction solar cell
S Masudy-Panah, GK Dalapati, K Radhakrishnan, A Kumar, HR Tan
Journal of Applied Physics 116 (7), 2014
Electrical and optical properties of Si-doped InP grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell
HQ Zheng, K Radahakrishnan, SF Yoon, GI Ng
Journal of Applied Physics 87 (11), 7988-7993, 2000
Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy
HQ Zheng, K Radhakrishnan, H Wang, KH Yuan, SF Yoon, GI Ng
Applied Physics Letters 77 (6), 869-871, 2000
Ionic conductivity studies on Li1− xM2− xM′ xP3O12 (H= Hf, Zr; M′= Ti, Nb)
BVR Chowdari, K Radhakrishnan, KA Thomas, GVS Rao
Materials Research Bulletin 24 (2), 221-229, 1989
Optical bandgap widening and phase transformation of nitrogen doped cupric oxide
S Masudy-Panah, K Radhakrishnan, A Kumar, TI Wong, R Yi, GK Dalapati
Journal of Applied Physics 118 (22), 2015
Thermal resistance of metamorphic InP-based HBTs on GaAs substrates using a linearly graded In/sub x/Ga/sub 1-x/P metamorphic buffer
H Yang, H Wang, K Radhakrishnan, CL Tan
IEEE Transactions on Electron Devices 51 (8), 1221-1227, 2004
Fatigue and reliability evaluation of unnotched carbon epoxy laminates
K Radhakrishnan
Journal of composite materials 18 (1), 21-31, 1984
Ionic conductivity studies of the vitreous Li2O: P2O5: Ta2O5 system
BVR Chowdari, K Radhakrishnan
Journal of non-crystalline solids 108 (3), 323-332, 1989
GaN Schottky metal–semiconductor–metal UV photodetectors on Si (111) grown by ammonia-MBE
L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, Z Wang, ...
IEEE Sensors Journal 17 (1), 72-77, 2016
Characterization of beryllium-doped molecular beam epitaxial grown GaAs by photoluminescence
DH Zhang, K Radhakrishnan, SF Yoon
Journal of crystal growth 148 (1-2), 35-40, 1995
Demonstration of AlGaN/GaN high-electron-mobility transistors on 100 mm diameter Si (111) by plasma-assisted molecular beam epitaxy
K Radhakrishnan, N Dharmarasu, Z Sun, S Arulkumaran, GI Ng
Applied Physics Letters 97 (23), 2010
Demonstration of aluminum-free metamorphic InP/In (0. 53) Ga (0. 47) As/InP double heterojunction bipolar transistors on GaAssubstrates
H Wang, GI Ng, H Zheng, YZ Xiong, LH Chua, K Yuan, K Radhakrishnan, ...
IEEE Electron Device Letters 21 (9), 427-429, 2000
Characterization of linearly graded metamorphic InGaP buffer layers on GaAs using high-resolution X-ray diffraction
K Yuan, K Radhakrishnan, HQ Zheng, QD Zhuang, GI Ing
Thin Solid Films 391 (1), 36-41, 2001
Preparation and characterization of rf-sputtered thin films
K Radhakrishnan, CL Tan, HQ Zheng, GI Ng
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 18 (4 …, 2000
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