| Electronic band structure and effective mass parameters of Ge1-xSnx alloys K Lu Low, Y Yang, G Han, W Fan, YC Yeo Journal of Applied Physics 112 (10), 2012 | 292 | 2012 |
| Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade subthreshold swing, negligible hysteresis, and improved Ids J Zhou, G Han, Q Li, Y Peng, X Lu, C Zhang, J Zhang, QQ Sun, DW Zhang, ... 2016 IEEE International Electron Devices Meeting (IEDM), 12.2. 1-12.2. 4, 2016 | 173 | 2016 |
| Tunneling field-effect transistor: Effect of strain and temperature on tunneling current PF Guo, LT Yang, Y Yang, L Fan, GQ Han, GS Samudra, YC Yeo IEEE Electron Device Letters 30 (9), 981-983, 2009 | 118 | 2009 |
| Comparison study of β-Ga2O3 photodetectors grown on sapphire at different oxygen pressures L Huang, Q Feng, G Han, F Li, X Li, L Fang, X Xing, J Zhang, Y Hao IEEE Photonics Journal 9 (4), 1-8, 2017 | 115 | 2017 |
| Negative differential resistance in negative capacitance FETs J Zhou, G Han, J Li, Y Liu, Y Peng, J Zhang, QQ Sun, DW Zhang, Y Hao IEEE Electron Device Letters 39 (4), 622-625, 2018 | 112 | 2018 |
| High-mobility germanium-tin (GeSn) p-channel MOSFETs featuring metallic source/drain and sub-370 C process modules G Han, S Su, C Zhan, Q Zhou, Y Yang, L Wang, P Guo, W Wei, CP Wong, ... 2011 International Electron Devices Meeting, 16.7. 1-16.7. 3, 2011 | 105 | 2011 |
| Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 Passivation X Gong, G Han, F Bai, S Su, P Guo, Y Yang, R Cheng, D Zhang, G Zhang, ... IEEE Electron Device Letters 34 (3), 339-341, 2013 | 103 | 2013 |
| (AlGa)2O3 solar-blind photodetectors on sapphire with wider bandgap and improved responsivity Q Feng, X Li, G Han, L Huang, F Li, W Tang, J Zhang, Y Hao Optical Materials Express 7 (4), 1240-1248, 2017 | 97 | 2017 |
| Relaxed and strained patterned germanium-tin structures: a Raman scattering study R Cheng, W Wang, X Gong, L Sun, P Guo, H Hu, Z Shen, G Han, YC Yeo ECS Journal of Solid State Science and Technology 2 (4), P138, 2013 | 92 | 2013 |
| High-Q resonances governed by the quasi-bound states in the continuum in all-dielectric metasurfaces C Fang, Q Yang, Q Yuan, X Gan, J Zhao, Y Shao, Y Liu, G Han, Y Hao Opto-Electronic Advances 4 (6), 200030-1-200030-10, 2021 | 84 | 2021 |
| Silicon-based tunneling field-effect transistor with elevated germanium source formed on (110) silicon substrate G Han, P Guo, Y Yang, C Zhan, Q Zhou, YC Yeo Applied Physics Letters 98 (15), 2011 | 82 | 2011 |
| Computing primitive of fully VCSEL-based all-optical spiking neural network for supervised learning and pattern classification S Xiang, Z Ren, Z Song, Y Zhang, X Guo, G Han, Y Hao IEEE transactions on neural networks and learning systems 32 (6), 2494-2505, 2020 | 81 | 2020 |
| Ferroelectric negative capacitance GeSn PFETs with sub-20 mV/decade subthreshold swing J Zhou, G Han, Y Peng, Y Liu, J Zhang, QQ Sun, DW Zhang, Y Hao IEEE Electron Device Letters 38 (8), 1157-1160, 2017 | 80 | 2017 |
| A van der Waals Synaptic Transistor Based on Ferroelectric Hf0.5Zr0.5O2 and 2D Tungsten Disulfide L Chen, L Wang, Y Peng, X Feng, S Sarkar, S Li, B Li, L Liu, K Han, ... Advanced Electronic Materials 6 (6), 2000057, 2020 | 79 | 2020 |
| Recent progress of integrated circuits and optoelectronic chips Y Hao, S Xiang, G Han, J Zhang, X Ma, Z Zhu, X Guo, Y Zhang, Y Han, ... Science China Information Sciences 64 (10), 201401, 2021 | 76 | 2021 |
| Comparison Study of-Ga2O3Photodetectors on Bulk Substrate and Sapphire Q Feng, L Huang, G Han, F Li, X Li, L Fang, X Xing, J Zhang, W Mu, Z Jia, ... IEEE Transactions on Electron Devices 63 (9), 3578-3583, 2016 | 72 | 2016 |
| First Demonstration of Waferscale Heterogeneous Integration of Ga2O3 MOSFETs on SiC and Si Substrates by Ion-Cutting Process W Xu, Y Wang, T You, X Ou, G Han, H Hu, S Zhang, F Mu, T Suga, ... 2019 IEEE International Electron Devices Meeting (IEDM), 12.5. 1-12.5. 4, 2019 | 69 | 2019 |
| Towards direct band-to-band tunneling in p-channel tunneling field effect transistor (TFET): Technology enablement by germanium-tin (GeSn) Y Yang, S Su, P Guo, W Wang, X Gong, L Wang, KL Low, G Zhang, C Xue, ... 2012 International Electron Devices Meeting, 16.3. 1-16.3. 4, 2012 | 69 | 2012 |
| GeSn quantum well p-channel tunneling FETs fabricated on Si (001) and (111) with improved subthreshold swing G Han, Y Wang, Y Liu, C Zhang, Q Feng, M Liu, S Zhao, B Cheng, ... IEEE Electron Device Letters 37 (6), 701-704, 2016 | 67 | 2016 |
| Germanium–tin p-channel tunneling field-effect transistor: Device design and technology demonstration Y Yang, G Han, P Guo, W Wang, X Gong, L Wang, KL Low, YC Yeo IEEE Transactions on Electron Devices 60 (12), 4048-4056, 2013 | 66 | 2013 |
