Deji Akinwande
Cited by
Cited by
Recent advances in two-dimensional materials beyond graphene
GR Bhimanapati, Z Lin, V Meunier, Y Jung, J Cha, S Das, D Xiao, Y Son, ...
ACS nano 9 (12), 11509-11539, 2015
Recent development of two-dimensional transition metal dichalcogenides and their applications
W Choi, N Choudhary, GH Han, J Park, D Akinwande, YH Lee
Materials Today 20 (3), 116-130, 2017
Two-dimensional flexible nanoelectronics
D Akinwande, N Petrone, J Hone
Nature communications 5 (1), 5678, 2014
Silicene field-effect transistors operating at room temperature
L Tao, E Cinquanta, D Chiappe, C Grazianetti, M Fanciulli, M Dubey, ...
Nature nanotechnology 10 (3), 227-231, 2015
Graphene and two-dimensional materials for silicon technology
D Akinwande, C Huyghebaert, CH Wang, MI Serna, S Goossens, LJ Li, ...
Nature 573 (7775), 507-518, 2019
A review on mechanics and mechanical properties of 2D materials—Graphene and beyond
D Akinwande, CJ Brennan, JS Bunch, P Egberts, JR Felts, H Gao, ...
Extreme Mechanics Letters 13, 42-77, 2017
Buckled two-dimensional Xene sheets
A Molle, J Goldberger, M Houssa, Y Xu, SC Zhang, D Akinwande
Nature materials 16 (2), 163-169, 2017
Graphene electronic tattoo sensors
S Kabiri Ameri, R Ho, H Jang, L Tao, Y Wang, L Wang, DM Schnyer, ...
ACS nano 11 (8), 7634-7641, 2017
Pressure-induced semiconducting to metallic transition in multilayered molybdenum disulphide
AP Nayak, S Bhattacharyya, J Zhu, J Liu, X Wu, T Pandey, C Jin, ...
Nature communications 5 (1), 1-9, 2014
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
High-Performance, Highly Bendable MoS2 Transistors with High-K Dielectrics for Flexible Low-Power Systems
HY Chang, S Yang, J Lee, L Tao, WS Hwang, D Jena, N Lu, D Akinwande
ACS nano 7 (6), 5446-5452, 2013
Carbon nanotube and graphene device physics
HSP Wong, D Akinwande
cambridge university press, 2010
Atomristor: nonvolatile resistance switching in atomic sheets of transition metal dichalcogenides
R Ge, X Wu, M Kim, J Shi, S Sonde, L Tao, Y Zhang, JC Lee, ...
Nano letters 18 (1), 434-441, 2018
Flexible black phosphorus ambipolar transistors, circuits and AM demodulator
W Zhu, MN Yogeesh, S Yang, SH Aldave, JS Kim, S Sonde, L Tao, N Lu, ...
Nano letters 15 (3), 1883-1890, 2015
Toward air-stable multilayer phosphorene thin-films and transistors
JS Kim, Y Liu, W Zhu, S Kim, D Wu, L Tao, A Dodabalapur, K Lai, ...
Scientific reports 5 (1), 8989, 2015
Enhancement of the electrical properties of graphene grown by chemical vapor deposition via controlling the effects of polymer residue
JW Suk, WH Lee, J Lee, H Chou, RD Piner, Y Hao, D Akinwande, ...
Nano letters 13 (4), 1462-1467, 2013
Pressure-dependent optical and vibrational properties of monolayer molybdenum disulfide
AP Nayak, T Pandey, D Voiry, J Liu, ST Moran, A Sharma, C Tan, ...
Nano letters 15 (1), 346-353, 2015
Technology roadmap for flexible sensors
Y Luo, MR Abidian, JH Ahn, D Akinwande, AM Andrews, M Antonietti, ...
ACS nano 17 (6), 5211-5295, 2023
Insulators for 2D nanoelectronics: the gap to bridge
YY Illarionov, T Knobloch, M Jech, M Lanza, D Akinwande, MI Vexler, ...
Nature communications 11 (1), 3385, 2020
Silicene, silicene derivatives, and their device applications
A Molle, C Grazianetti, L Tao, D Taneja, MH Alam, D Akinwande
Chemical Society Reviews 47 (16), 6370-6387, 2018
The system can't perform the operation now. Try again later.
Articles 1–20