Follow
Gilles Patriarche
Gilles Patriarche
Centre de Nanosciences et de Nanotechnologies (C2N), CNRS, Université Paris Sud, Université Paris
Verified email at c2n.upsaclay.fr
Title
Cited by
Cited by
Year
Why does wurtzite form in nanowires of III-V zinc blende semiconductors?
F Glas, JC Harmand, G Patriarche
Physical review letters 99 (14), 146101, 2007
8852007
Core/shell colloidal semiconductor nanoplatelets
B Mahler, B Nadal, C Bouet, G Patriarche, B Dubertret
Journal of the American Chemical Society 134 (45), 18591-18598, 2012
3842012
Analysis of vapor-liquid-solid mechanism in Au-assisted GaAs nanowire growth
JC Harmand, G Patriarche, N Péré-Laperne, MN Merat-Combes, ...
Applied Physics Letters 87 (20), 203101, 2005
3472005
Crystal phase quantum dots
N Akopian, G Patriarche, L Liu, JC Harmand, V Zwiller
Nano letters 10 (4), 1198-1201, 2010
2762010
Band Alignment and Minigaps in Monolayer MoS2-Graphene van der Waals Heterostructures
D Pierucci, H Henck, J Avila, A Balan, CH Naylor, G Patriarche, YJ Dappe, ...
Nano letters 16 (7), 4054-4061, 2016
2742016
Efficient exciton concentrators built from colloidal core/crown CdSe/CdS semiconductor nanoplatelets
MD Tessier, P Spinicelli, D Dupont, G Patriarche, S Ithurria, B Dubertret
Nano letters 14 (1), 207-213, 2014
2522014
Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm
C Paranthoen, N Bertru, O Dehaese, A Le Corre, S Loualiche, B Lambert, ...
Applied Physics Letters 78 (12), 1751-1753, 2001
2042001
From excitonic to photonic polariton condensate in a ZnO-based microcavity
F Li, L Orosz, O Kamoun, S Bouchoule, C Brimont, P Disseix, T Guillet, ...
Physical review letters 110 (19), 196406, 2013
2002013
Predictive modeling of self-catalyzed III-V nanowire growth
F Glas, MR Ramdani, G Patriarche, JC Harmand
Physical Review B 88 (19), 195304, 2013
1992013
Au-assisted molecular beam epitaxy of InAs nanowires: Growth and theoretical analysis
M Tchernycheva, L Travers, G Patriarche, F Glas, JC Harmand, GE Cirlin, ...
Journal of Applied Physics 102 (9), 094313, 2007
1812007
Type-II CdSe/CdTe core/crown semiconductor nanoplatelets
S Pedetti, S Ithurria, H Heuclin, G Patriarche, B Dubertret
Journal of the American Chemical Society 136 (46), 16430-16438, 2014
1712014
Growth and characterization of InP nanowires with InAsP insertions
M Tchernycheva, GE Cirlin, G Patriarche, L Travers, V Zwiller, U Perinetti, ...
Nano letters 7 (6), 1500-1504, 2007
1632007
Arsenic pathways in self-catalyzed growth of GaAs nanowires
MR Ramdani, JC Harmand, F Glas, G Patriarche, L Travers
Crystal Growth & Design 13 (1), 91-96, 2013
1622013
Growth of GaN free-standing nanowires by plasma-assisted molecular beam epitaxy: structural and optical characterization
M Tchernycheva, C Sartel, G Cirlin, L Travers, G Patriarche, JC Harmand, ...
Nanotechnology 18 (38), 385306, 2007
1592007
Gradient CdSe/CdS quantum dots with room temperature biexciton unity quantum yield
M Nasilowski, P Spinicelli, G Patriarche, B Dubertret
Nano letters 15 (6), 3953-3958, 2015
1492015
Infrared photodetection based on colloidal quantum-dot films with high mobility and optical absorption up to THz
E Lhuillier, M Scarafagio, P Hease, B Nadal, H Aubin, XZ Xu, N Lequeux, ...
Nano letters 16 (2), 1282-1286, 2016
1482016
Temperature conditions for GaAs nanowire formation by Au-assisted molecular beam epitaxy
M Tchernycheva, JC Harmand, G Patriarche, L Travers, GE Cirlin
Nanotechnology 17 (16), 4025, 2006
1442006
Growth and characterization of wurtzite GaAs nanowires with defect-free zinc blende GaAsSb inserts
DL Dheeraj, G Patriarche, H Zhou, TB Hoang, AF Moses, S Grønsberg, ...
Nano letters 8 (12), 4459-4463, 2008
1432008
Synthesis and optical characterizations of undoped and rare-earth-doped CaF2 nanoparticles
A Bensalah, M Mortier, G Patriarche, P Gredin, D Vivien
Journal of Solid State Chemistry 179 (8), 2636-2644, 2006
1432006
van der Waals epitaxy of GaSe/graphene heterostructure: electronic and interfacial properties
Z Ben Aziza, H Henck, D Pierucci, MG Silly, E Lhuillier, G Patriarche, ...
ACS nano 10 (10), 9679-9686, 2016
1402016
The system can't perform the operation now. Try again later.
Articles 1–20