Follow
Evelyn T. Breyer
Evelyn T. Breyer
Verified email at tu-dresden.de
Title
Cited by
Cited by
Year
Ferroelectric field-effect transistors based on HfO2: a review
H Mulaosmanovic, ET Breyer, S Dünkel, S Beyer, T Mikolajick, ...
Nanotechnology, 2021
1642021
Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance
H Mulaosmanovic, ET Breyer, T Mikolajick, S Slesazeck
IEEE Transactions on Electron Devices 66 (9), 3828-3833, 2019
1402019
FeFET: A versatile CMOS compatible device with game-changing potential
S Beyer, S Dünkel, M Trentzsch, J Müller, A Hellmich, D Utess, J Paul, ...
2020 IEEE International Memory Workshop (IMW), 1-4, 2020
1102020
Demonstration of BEOL-compatible ferroelectric Hf0.5Zr0.5O2 scaled FeRAM co-integrated with 130nm CMOS for embedded NVM applications
T Francois, L Grenouillet, J Coignus, P Blaise, C Carabasse, N Vaxelaire, ...
2019 IEEE International Electron Devices Meeting (IEDM), 15.7. 1-15.7. 4, 2019
982019
Reconfigurable NAND/NOR logic gates in 28 nm HKMG and 22 nm FD-SOI FeFET technology
ET Breyer, H Mulaosmanovic, T Mikolajick, S Slesazeck
2017 IEEE International Electron Devices Meeting (IEDM), 28.5. 1-28.5. 4, 2017
872017
Computing with ferroelectric FETs: Devices, models, systems, and applications
A Aziz, ET Breyer, A Chen, X Chen, S Datta, SK Gupta, M Hoffmann, ...
2018 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2018
862018
Impact of Read Operation on the Performance of HfO2-Based Ferroelectric FETs
H Mulaosmanovic, S Dünkel, J Müller, M Trentzsch, S Beyer, ET Breyer, ...
IEEE Electron Device Letters 41 (9), 1420-1423, 2020
602020
Recovery of cycling endurance failure in ferroelectric FETs by self-heating
H Mulaosmanovic, ET Breyer, T Mikolajick, S Slesazeck
IEEE Electron Device Letters 40 (2), 216-219, 2018
582018
A computational study of hafnia-based ferroelectric memories: from ab initio via physical modeling to circuit models of ferroelectric device
M Pešić, C Künneth, M Hoffmann, H Mulaosmanovic, S Müller, ET Breyer, ...
Journal of Computational Electronics 16 (4), 1236-1256, 2017
542017
Investigation of Accumulative Switching in Ferroelectric FETs: Enabling Universal Modeling of the Switching Behavior
H Mulaosmanovic, S Dünkel, M Trentzsch, S Beyer, ET Breyer, ...
IEEE Transactions on Electron Devices 67 (12), 5804-5809, 2020
452020
Perspective on ferroelectric, hafnium oxide based transistors for digital beyond von-Neumann computing
ET Breyer, H Mulaosmanovic, T Mikolajick, S Slesazeck
Applied Physics Letters 118 (5), 050501, 2021
422021
Reconfigurable frequency multiplication with a ferroelectric transistor
H Mulaosmanovic, ET Breyer, T Mikolajick, S Slesazeck
Nature Electronics 3 (7), 391-397, 2020
412020
Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs
H Mulaosmanovic, F Müller, M Lederer, T Ali, R Hoffmann, K Seidel, ...
IEEE Transactions on Electron Devices 67 (8), 3466-3471, 2020
382020
Compact FeFET circuit building blocks for fast and efficient nonvolatile logic-in-memory
ET Breyer, H Mulaosmanovic, J Trommer, T Melde, S Dünkel, M Trentzsch, ...
IEEE Journal of the Electron Devices Society 8, 748-756, 2020
332020
Next Generation Ferroelectric Memories enabled by Hafnium Oxide
T Mikolajick, U Schroeder, PD Lomenzo, ET Breyer, H Mulaosmanovic, ...
2019 IEEE International Electron Devices Meeting (IEDM), 15.5. 1-15.5. 4, 2019
322019
A 2TnC ferroelectric memory gain cell suitable for compute-in-memory and neuromorphic application
S Slesazeck, T Ravsher, V Havel, ET Breyer, H Mulaosmanovic, ...
2019 IEEE International Electron Devices Meeting (IEDM), 38.6. 1-38.6. 4, 2019
282019
Uniting The Trinity of Ferroelectric HfO2 Memory Devices in a Single Memory Cell
S Slesazeck, V Havel, E Breyer, H Mulaosmanovic, M Hoffmann, B Max, ...
2019 IEEE 11th International Memory Workshop (IMW), 1-4, 2019
272019
Demonstration of versatile nonvolatile logic gates in 28nm HKMG FeFET technology
ET Breyer, H Mulaosmanovic, S Slesazeck, T Mikolajick
2018 IEEE International Symposium on Circuits and Systems (ISCAS), 1-5, 2018
272018
Switching and Charge Trapping in HfO2-based Ferroelectric FETs: An Overview and Potential Applications
H Mulaosmanovic, ET Breyer, T Mikolajick, S Slesazeck
2020 4th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2020
162020
Polarization-based configurable logic gate
S Slesazeck, H Mulaosmanovic, E Breyer
US Patent 10,424,379, 2019
142019
The system can't perform the operation now. Try again later.
Articles 1–20