| Toward clean and crackless transfer of graphene X Liang, BA Sperling, I Calizo, G Cheng, CA Hacker, Q Zhang, Y Obeng, ... ACS nano 5 (11), 9144-9153, 2011 | 1026 | 2011 |
| Contact-induced crystallinity for high-performance soluble acene-based transistors and circuits DJ Gundlach, JE Royer, SK Park, S Subramanian, OD Jurchescu, ... Nature Materials 7 (3), 216-221, 2008 | 550 | 2008 |
| A flexible solution-processed memristor N Gergel-Hackett, B Hamadani, B Dunlap, J Suehle, C Richter, C Hacker, ... IEEE Electron Device Letters 30 (7), 706-708, 2009 | 308 | 2009 |
| Variations in semiconducting polymer microstructure and hole mobility with spin-coating speed DM DeLongchamp, BM Vogel, Y Jung, MC Gurau, CA Richter, OA Kirillov, ... Chemistry of materials 17 (23), 5610-5612, 2005 | 307 | 2005 |
| New resistivity for high-mobility quantum Hall conductors PL McEuen, A Szafer, CA Richter, BW Alphenaar, JK Jain, AD Stone, ... Phys. Rev. Lett. 64 (17), 2062, 1990 | 297 | 1990 |
| New resistivity for high-mobility quantum Hall conductors PL McEuen, A Szafer, CA Richter, BW Alphenaar, JK Jain, AD Stone, ... Phys. Rev. Lett. 64, 2062, 1990 | 297 | 1990 |
| Determination of graphene work function and graphene-insulator-semiconductor band alignment by internal photoemission spectroscopy R Yan, Q Zhang, W Li, I Calizo, T Shen, CA Richter, AR Hight-Walker, ... Applied Physics Letters 101 (2), 2012 | 227 | 2012 |
| Spectroscopic ellipsometry characterization of high-k dielectric thin films and the high-temperature annealing effects on their optical properties YJ Cho, NV Nguyen, CA Richter, JR Ehrstein, BH Lee, JC Lee Applied physics letters 80 (7), 1249-1251, 2002 | 203 | 2002 |
| Silicon nanowires as enhancement-mode Schottky barrier field-effect transistors SM Koo, MD Edelstein, Q Li, CA Richter, EM Vogel Nanotechnology 16 (9), 1482, 2005 | 196 | 2005 |
| Enhanced channel modulation in dual-gated silicon nanowire transistors SM Koo, Q Li, MD Edelstein, CA Richter, EM Vogel Nano letters 5 (12), 2519-2523, 2005 | 184 | 2005 |
| Ultraviolet/ozone treatment to reduce metal-graphene contact resistance W Li, Y Liang, D Yu, L Peng, KP Pernstich, T Shen, AR Hight Walker, ... Applied Physics Letters 102 (18), 2013 | 175 | 2013 |
| Controllable, wide‐ranging n‐doping and p‐doping of monolayer group 6 transition‐metal disulfides and diselenides S Zhang, HM Hill, K Moudgil, CA Richter, AR Hight Walker, S Barlow, ... Advanced Materials 30 (36), 1802991, 2018 | 148 | 2018 |
| Broadband optical properties of large-area monolayer CVD molybdenum disulfide W Li, AG Birdwell, M Amani, RA Burke, X Ling, YH Lee, X Liang, L Peng, ... Physical Review B 90 (19), 195434, 2014 | 146 | 2014 |
| Limitations of conductance to the measurement of the interface state density of MOS capacitors with tunneling gate dielectrics EM Vogel, WK Henson, CA Richter, JS Suehle IEEE Transactions on Electron Devices 47 (3), 601-608, 2000 | 134 | 2000 |
| Influence of Metal–MoS2 Interface on MoS2 Transistor Performance: Comparison of Ag and Ti Contacts H Yuan, G Cheng, L You, H Li, H Zhu, W Li, JJ Kopanski, YS Obeng, ... ACS applied materials & interfaces 7 (2), 1180-1187, 2015 | 125 | 2015 |
| Topological Insulator Bi2Se3 Nanowire High Performance Field-Effect Transistors H Zhu, CA Richter, E Zhao, JE Bonevich, WA Kimes, HJ Jang, H Yuan, ... Scientific reports 3 (1), 1757, 2013 | 122 | 2013 |
| High inversion current in silicon nanowire field effect transistors SM Koo, A Fujiwara, JP Han, EM Vogel, CA Richter, JE Bonevich Nano Letters 4 (11), 2197-2201, 2004 | 117 | 2004 |
| Influence of a water rinse on the structure and properties of poly (3, 4-ethylene dioxythiophene): poly (styrene sulfonate) films DM DeLongchamp, BD Vogt, CM Brooks, K Kano, J Obrzut, CA Richter, ... Langmuir 21 (24), 11480-11483, 2005 | 116 | 2005 |
| How to report and benchmark emerging field-effect transistors Z Cheng, CS Pang, P Wang, ST Le, Y Wu, D Shahrjerdi, I Radu, ... Nature Electronics 5 (7), 416-423, 2022 | 112 | 2022 |
| A comparison of quantum-mechanical capacitance-voltage simulators CA Richter, AR Hefner, EM Vogel IEEE Electron Device Letters 22 (1), 35-37, 2001 | 110 | 2001 |
Christina HackerNational Institute of Standards and TechnologyVerified email at nist.gov
