Magali Grégoire
Title
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Year
14nm FDSOI technology for high speed and energy efficient applications
O Weber, E Josse, F Andrieu, A Cros, E Richard, P Perreau, E Baylac, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
872014
Nickel silicide encroachment formation and characterization
B Imbert, R Pantel, S Zoll, M Gregoire, R Beneyton, S Del Medico, ...
Microelectronic engineering 87 (3), 245-248, 2010
412010
Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor
F Panciera, K Hoummada, M Gregoire, M Juhel, N Bicais, D Mangelinck
Applied Physics Letters 99 (5), 051911, 2011
402011
FDSOI bottom MOSFETs stability versus top transistor thermal budget featuring 3D monolithic integration
C Fenouillet-Beranger, B Previtali, P Batude, F Nemouchi, M Casse, ...
2014 44th European Solid State Device Research Conference (ESSDERC), 110-113, 2014
292014
Atom probe tomography of SRAM transistors: Specimen preparation methods and analysis
F Panciera, K Hoummada, M Gregoire, M Juhel, F Lorut, N Bicais, ...
Microelectronic engineering 107, 167-172, 2013
242013
Impact of introducing CuSiN self-aligned barriers in advanced copper interconnects
S Chhun, LG Gosset, N Casanova, D Ney, D Delille, C Trouiller, ...
Microelectronic engineering 82 (3-4), 587-593, 2005
232005
Impact of local back biasing on performance in hybrid FDSOI/bulk high-k/metal gate low power (LP) technology
C Fenouillet-Beranger, P Perreau, T Benoist, C Richier, S Haendler, ...
2012 13th International Conference on Ultimate Integration on Silicon (ULIS …, 2012
202012
Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold
F Panciera, S Baudot, K Hoummada, M Gregoire, M Juhel, D Mangelinck
Applied Physics Letters 100 (20), 201909, 2012
192012
Direct epitaxial growth of θ-Ni2Si by reaction of a thin Ni (10 at.% Pt) film with Si (1 0 0) substrate
F Panciera, D Mangelinck, K Hoummada, M Texier, M Bertoglio, ...
Scripta Materialia 78, 9-12, 2014
182014
Electron BackScattered Diffraction (EBSD) use and applications in newest technologies development
S Courtas, M Grégoire, X Federspiel, N Bicaïs-Lepinay, C Wyon
Microelectronics Reliability 46 (9-11), 1530-1535, 2006
162006
Pt redistribution in N-MOS transistors during Ni salicide process
F Panciera, K Hoummada, M Gregoire, M Juhel, D Mangelinck
Microelectronic engineering 107, 173-177, 2013
152013
Stresses in copper blanket films and damascene lines: Measurements and finite element analysis
A Baldacci, C Rivero, P Gergaud, M Grégoire, O Sicardy, O Bostrom, ...
Proceedings of the 30th European Solid-State Circuits Conference (IEEE Cat …, 2004
102004
Atomic scale investigation of arsenic segregation in high-k metal gate stacks
R Estivill, M Juhel, M Gregoire, A Grenier, V Delaye, D Blavette
Scripta Materialia 113, 231-235, 2016
82016
Kinetics study of NiPt (10 at.%)/Si0. 7Ge0. 3 solid state reactions
E Bourjot, M Putero, C Perrin-Pellegrino, P Gergaud, M Gregoire, ...
Microelectronic engineering 120, 163-167, 2014
82014
Nitrogen impurity effects on nickel silicide formation at low temperatures–New “nitrogen co-plasma” approach
B Imbert, M Gregoire, S Zoll, R Beneyton, S Del-Medico, C Trouiller, ...
Microelectronic engineering 85 (10), 2005-2008, 2008
82008
Improved electrical and reliability performance of 65 nm interconnects with new barrier integration schemes
R Delsol, JP Jacquemin, M Gregoire, V Girault, X Federspiel, ...
Microelectronic engineering 83 (11-12), 2377-2380, 2006
82006
Modeling of Fermi-level pinning alleviation with MIS contacts: N and pMOSFETs cointegration considerations—Part I
J Borrel, L Hutin, O Rozeau, MA Jaud, S Martinie, M Gregoire, E Dubois, ...
IEEE Transactions on Electron Devices 63 (9), 3413-3418, 2016
72016
Ni (Pt)-silicide contacts on CMOS devices: Impact of substrate nature and Pt concentration on the phase formation
F Panciera, K Hoummada, C Perrin, M El Kousseifi, R Pantel, M Descoins, ...
Microelectronic engineering 120, 34-40, 2014
72014
Technological enhancers effect on Ni0.9Co0.1 silicide stability for 3D sequential integration
F Deprat, F Nemouchi, C Fenouillet‐Beranger, P Rodriguez, S Joblot, ...
physica status solidi (c) 13 (10‐12), 760-765, 2016
62016
Gate shadowing effect on Ni (Pt) Si abnormal diffusion for sub-45 nm technologies
M Gregoire, R Beneyton, S Del Medico, S Zoll
Microelectronic engineering 88 (5), 548-552, 2011
62011
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