陈冰 Bing Chen
陈冰 Bing Chen
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A general memristor-based partial differential equation solver
MA Zidan, YJ Jeong, J Lee, B Chen, S Huang, MJ Kushner, WD Lu
Nature Electronics 1 (7), 411, 2018
A physics-based compact model of metal-oxide-based RRAM DC and AC operations
P Huang, XY Liu, B Chen, HT Li, YJ Wang, YX Deng, KL Wei, L Zeng, ...
IEEE Trans. Electron Devices 60 (12), 4090-4097, 2013
Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems
B Gao, Y Bi, HY Chen, R Liu, P Huang, B Chen, L Liu, X Liu, S Yu, ...
ACS nano 8 (7), 6998-7004, 2014
RRAM Crossbar Array With Cell Selection Device: A Device and Circuit Interaction Study
Y Deng, P Huang, B Chen, X Yang, B Gao, J Wang, L Zeng, G Du, J Kang, ...
IEEE, 2013
Physical mechanisms of endurance degradation in TMO-RRAM
B Chen, Y Lu, B Gao, YH Fu, FF Zhang, P Huang, YS Chen, LF Liu, ...
Electron Devices Meeting (IEDM), 2011 IEEE International, 12.3. 1-12.3. 4, 2011
Memristive physically evolving networks enabling the emulation of heterosynaptic plasticity
Y Yang, B Chen, WD Lu
Advanced Materials 27 (47), 7720-7727, 2015
A SPICE model of resistive random access memory for large-scale memory array simulation
H Li, P Huang, B Gao, B Chen, X Liu, J Kang
IEEE Electron Device Letters 35 (2), 211-213, 2014
Microscopic mechanism for unipolar resistive switching behaviour of nickel oxides
YS Chen, JF Kang, B Chen, B Gao, LF Liu, XY Liu, YY Wang, L Wu, ...
Journal of Physics D: Applied Physics 45 (6), 065303, 2012
Efficient in-memory computing architecture based on crossbar arrays
B Chen, F Cai, J Zhou, W Ma, P Sheridan, WD Lu
Electron Devices Meeting (IEDM), 2015 IEEE International, 17.5. 1-17.5. 4, 2015
Very low-programming-current RRAM with self-rectifying characteristics
J Zhou, F Cai, Q Wang, B Chen, S Gaba, WD Lu
IEEE Electron Device Letters 37 (4), 404-407, 2016
Modeling of retention failure behavior in bipolar oxide-based resistive switching memory
B Gao, H Zhang, B Chen, L Liu, X Liu, R Han, J Kang, Z Fang, H Yu, B Yu, ...
IEEE Electron Device Letters 32 (3), 276-278, 2011
Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching
B Gao, JF Kang, YS Chen, FF Zhang, B Chen, P Huang, LF Liu, XY Liu, ...
Electron Devices Meeting (IEDM), 2011 IEEE International, 17.4. 1-17.4. 4, 2011
Highly compact 1T-1R architecture (4F2 footprint) involving fully CMOS compatible vertical GAA nano-pillar transistors and oxide-based RRAM cells exhibiting …
XP Wang, Z Fang, X Li, B Chen, B Gao, JF Kang, ZX Chen, A Kamath, ...
Electron Devices Meeting (IEDM), 2012 IEEE International, 20.6. 1-20.6. 4, 2012
Analytic model of endurance degradation and its practical applications for operation scheme optimization in metal oxide based RRAM
P Huang, B Chen, YJ Wang, FF Zhang, L Shen, R Liu, L Zeng, G Du, ...
Electron Devices Meeting (IEDM), 2013 IEEE International, 22.5. 1-22.5. 4, 2013
Design and optimization methodology for 3D RRAM arrays
Y Deng, HY Chen, B Gao, S Yu, SC Wu, L Zhao, B Chen, Z Jiang, X Liu, ...
Electron Devices Meeting (IEDM), 2013 IEEE International, 25.7. 1-25.7. 4, 2013
Well controlled multiple resistive switching states in the Al local doped HfO2 resistive random access memory device
YS Chen, B Chen, B Gao, LF Liu, XY Liu, JF Kang
Journal of Applied Physics 113 (16), 164507, 2013
A physical based analytic model of RRAM operation for circuit simulation
P Huang, XY Liu, WH Li, YX Deng, B Chen, Y Lu, B Gao, L Zeng, KL Wei, ...
Electron Devices Meeting (IEDM), 2012 IEEE International, 26.6. 1-26.6. 4, 2012
A novel defect-engineering-based implementation for high-performance multilevel data storage in resistive switching memory
B Gao, B Chen, F Zhang, L Liu, X Liu, J Kang, H Yu, B Yu
IEEE Transactions on Electron Devices 60 (4), 1379-1383, 2013
A novel operation scheme for oxide-based resistive-switching memory devices to achieve controlled switching behaviors
B Chen, B Gao, SW Sheng, LF Liu, XY Liu, YS Chen, Y Wang, RQ Han, ...
Electron Device Letters, IEEE 32 (3), 282-284, 2011
Oxide-based RRAM: physical based retention projection
B Gao, JF Kang, HW Zhang, B Sun, B Chen, LF Liu, XY Liu, RQ Han, ...
Solid-State Device Research Conference (ESSDERC), 2010 Proceedings of the …, 2010
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