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Toshikazu Nishida
Toshikazu Nishida
Verified email at ufl.edu
Title
Cited by
Cited by
Year
Uniaxial-process-induced strained-Si: Extending the CMOS roadmap
SE Thompson, G Sun, YS Choi, T Nishida
IEEE Transactions on electron Devices 53 (5), 1010-1020, 2006
7312006
Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors
Y Sun, SE Thompson, T Nishida
Journal of Applied Physics 101 (10), 2007
6362007
Lumped element modeling of piezoelectric-driven synthetic jet actuators
Q Gallas, R Holman, T Nishida, B Carroll, M Sheplak, L Cattafesta
AIAA journal 41 (2), 240-247, 2003
4012003
Strain effect in semiconductors: theory and device applications
Y Sun, SE Thompson, T Nishida
Springer Science & Business Media, 2009
3832009
Comprehensive characterization and failure modes of tungsten microwire arrays in chronic neural implants
A Prasad, QS Xue, V Sankar, T Nishida, G Shaw, WJ Streit, JC Sanchez
Journal of neural engineering 9 (5), 056015, 2012
3262012
A MEMS acoustic energy harvester
SB Horowitz, M Sheplak, LN Cattafesta, T Nishida
Journal of Micromechanics and Microengineering 16 (9), S174, 2006
2952006
Key differences for process-induced uniaxial vs. substrate-induced biaxial stressed Si and Ge channel MOSFETs
S Thompson, G Sun, K Wu, J Lim, T Nishida
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
2782004
Direct-current measurements of oxide and interface traps on oxidized silicon
A Neugroschel, CT Sah, KM Han, MS Carroll, T Nishida, JT Kavalieros, ...
IEEE Transactions on Electron Devices 42 (9), 1657-1662, 1995
2331995
Acoustic energy harvesting using an electromechanical Helmholtz resonator
F Liu, A Phipps, S Horowitz, K Ngo, L Cattafesta, T Nishida, M Sheplak
The Journal of the Acoustical Society of America 123 (4), 1983-1990, 2008
1992008
Abiotic-biotic characterization of Pt/Ir microelectrode arrays in chronic implants
A Prasad, QS Xue, R Dieme, V Sankar, RC Mayrand, T Nishida, WJ Streit, ...
Frontiers in neuroengineering 7, 2, 2014
1932014
Energy reclamation from a vibrating piezoceramic composite beam
A Kasyap, J Lim, D Johnson, S Horowitz, T Nishida, K Ngo, M Sheplak, ...
Proceedings of 9th International Congress on sound and vibration 9 (271), 36-43, 2002
1832002
TaN interface properties and electric field cycling effects on ferroelectric Si-doped HfO2 thin films
PD Lomenzo, Q Takmeel, C Zhou, CM Fancher, E Lambers, ...
Journal of Applied Physics 117 (13), 2015
1822015
Corrosion of tungsten microelectrodes used in neural recording applications
E Patrick, ME Orazem, JC Sanchez, T Nishida
Journal of neuroscience methods 198 (2), 158-171, 2011
1782011
Ferroelectric phenomena in Si-doped HfO2 thin films with TiN and Ir electrodes
PD Lomenzo, P Zhao, Q Takmeel, S Moghaddam, T Nishida, M Nelson, ...
Journal of Vacuum Science & Technology B 32 (3), 2014
1342014
Hole mobility in silicon inversion layers: Stress and surface orientation
G Sun, Y Sun, T Nishida, SE Thompson
Journal of Applied Physics 102 (8), 2007
1332007
Process compatible polysilicon-based electrical through-wafer interconnects in silicon substrates
EM Chow, V Chandrasekaran, A Partridge, T Nishida, M Sheplak, ...
Journal of Microelectromechanical systems 11 (6), 631-640, 2002
1332002
Effect of external strain on the conductivity of AlGaN/GaN high-electron-mobility transistors
BS Kang, S Kim, J Kim, F Ren, K Baik, SJ Pearton, BP Gila, CR Abernathy, ...
Applied physics letters 83 (23), 4845-4847, 2003
1192003
Piezoresistance Coefficients of (100) Silicon nMOSFETs Measured at Low and High (1.5 GPa) Channel Stress
S Suthram, JC Ziegert, T Nishida, SE Thompson
IEEE electron device letters 28 (1), 58-61, 2006
1112006
Development of a micromachined piezoelectric microphone for aeroacoustics applications
S Horowitz, T Nishida, L Cattafesta, M Sheplak
the journal of the acoustical society of America 122 (6), 3428-3436, 2007
1062007
Future of strained Si/semiconductors in nanoscale MOSFETs
SE Thompson, S Suthram, Y Sun, G Sun, S Parthasarathy, M Chu, ...
2006 International Electron Devices Meeting, 1-4, 2006
1062006
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