Follow
Kakuya Iwata
Title
Cited by
Cited by
Year
ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications
K Matsubara, P Fons, K Iwata, A Yamada, K Sakurai, H Tampo, S Niki
Thin Solid Films 431, 369-372, 2003
3192003
Uniaxial locked epitaxy of ZnO on the face of sapphire
P Fons, K Iwata, A Yamada, K Matsubara, S Niki, K Nakahara, T Tanabe, ...
Applied Physics Letters 77 (12), 1801-1803, 2000
2582000
Growth of high-quality epitaxial ZnO films on α-Al2O3
P Fons, K Iwata, S Niki, A Yamada, K Matsubara
Journal of Crystal Growth 201, 627-632, 1999
2431999
Nitrogen-induced defects in ZnO: N grown on sapphire substrate by gas source MBE
K Iwata, P Fons, A Yamada, K Matsubara, S Niki
Journal of Crystal Growth 209 (2-3), 526-531, 2000
2302000
Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy
K Nakahara, H Takasu, P Fons, A Yamada, K Iwata, K Matsubara, ...
Applied physics letters 79 (25), 4139-4141, 2001
1752001
ZnO growth on Si by radical source MBE
K Iwata, P Fons, S Niki, A Yamada, K Matsubara, K Nakahara, T Tanabe, ...
Journal of Crystal Growth 214, 50-54, 2000
1682000
Fabrication of wide-gap Cu (In1− xGax) Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness
S Ishizuka, K Sakurai, A Yamada, K Matsubara, P Fons, K Iwata, ...
Solar energy materials and solar cells 87 (1-4), 541-548, 2005
1532005
Band-gap modified Al-doped transparent conducting films deposited by pulsed laser deposition
K Matsubara, H Tampo, H Shibata, A Yamada, P Fons, K Iwata, S Niki
Applied Physics Letters 85 (8), 1374-1376, 2004
1482004
Gas source molecular beam epitaxy growth of GaN on C-, A-, R-and M-plane sapphire and silica glass substrates
K Iwata, HA Asami, RKR Kuroiwa, SGS Gonda
Japanese journal of applied physics 36 (6A), L661, 1997
1241997
Uniaxial locked growth of high-quality epitaxial ZnO films on (1120) α-Al2O3
P Fons, K Iwata, S Niki, A Yamada, K Matsubara, M Watanabe
Journal of Crystal Growth 209 (2-3), 532-536, 2000
1222000
High quality GaN growth on (0001) sapphire by ion-removed electron cyclotron resonance molecular beam epitaxy and first observation of (2× 2) and (4× 4) reflection high energy …
K Iwata, H Asahi, SJ Yu, K Asami, H Fujita, MFM Fushida, SGS Gonda
Japanese journal of applied physics 35 (3A), L289, 1996
1211996
Growth of undoped ZnO films with improved electrical properties by radical source molecular beam epitaxy
KNK Nakahara, TTT Tanabe, HTH Takasu, PFP Fons, KIK Iwata, ...
Japanese Journal of Applied Physics 40 (1R), 250, 2001
1202001
Growth of N-doped and Ga+ N-codoped ZnO films by radical source molecular beam epitaxy
K Nakahara, H Takasu, P Fons, A Yamada, K Iwata, K Matsubara, ...
Journal of crystal growth 237, 503-508, 2002
1082002
Improved external efficiency InGaN-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electrodes
K Nakahara, K Tamura, M Sakai, D Nakagawa, N Ito, M Sonobe, ...
Japanese journal of applied physics 43 (2A), L180, 2004
1062004
Degenerate layers in epitaxial ZnO films grown on sapphire substrates
H Tampo, A Yamada, P Fons, H Shibata, K Matsubara, K Iwata, S Niki, ...
Applied Physics Letters 84 (22), 4412-4414, 2004
962004
New III–V compound semiconductors TlInGaP for 0.9 µm to over 10 µm wavelength range laser diodes and their first successful growth
H Asahi, K Yamamoto, K Iwata, SG Oe
Japanese journal of applied physics 35 (7B), L876, 1996
901996
Optical properties of GaN layers grown on C-, A-, R-, and M-plane sapphire substrates by gas source molecular beam epitaxy
S Tripathy, RK Soni, H Asahi, K Iwata, R Kuroiwa, K Asami, S Gonda
Journal of applied physics 85 (12), 8386-8399, 1999
861999
Room-temperature deposition of Al-doped ZnO films by oxygen radical-assisted pulsed laser deposition
K Matsubara, P Fons, K Iwata, A Yamada, S Niki
Thin Solid Films 422 (1-2), 176-179, 2002
812002
Improvement of ZnO TCO film growth for photovoltaic devices by reactive plasma deposition (RPD)
K Iwata, T Sakemi, A Yamada, P Fons, K Awai, T Yamamoto, S Shirakata, ...
Thin Solid Films 480, 199-203, 2005
712005
Optical properties of GaN-rich side of GaNP and GaNAs alloys grown by gas-source molecular beam epitaxy
R Kuroiwa, H Asahi, K Asami, SJ Kim, K Iwata, S Gonda
Applied physics letters 73 (18), 2630-2632, 1998
681998
The system can't perform the operation now. Try again later.
Articles 1–20