Kakuya Iwata
Title
Cited by
Cited by
Year
ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications
K Matsubara, P Fons, K Iwata, A Yamada, K Sakurai, H Tampo, S Niki
Thin Solid Films 431, 369-372, 2003
3072003
Uniaxial locked epitaxy of ZnO on the face of sapphire
P Fons, K Iwata, A Yamada, K Matsubara, S Niki, K Nakahara, T Tanabe, ...
Applied Physics Letters 77 (12), 1801-1803, 2000
2592000
Growth of high-quality epitaxial ZnO films on α-Al2O3
P Fons, K Iwata, S Niki, A Yamada, K Matsubara
Journal of Crystal Growth 201, 627-632, 1999
2371999
Nitrogen-induced defects in ZnO: N grown on sapphire substrate by gas source MBE
K Iwata, P Fons, A Yamada, K Matsubara, S Niki
Journal of Crystal Growth 209 (2-3), 526-531, 2000
2292000
Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy
K Nakahara, H Takasu, P Fons, A Yamada, K Iwata, K Matsubara, ...
Applied physics letters 79 (25), 4139-4141, 2001
1692001
ZnO growth on Si by radical source MBE
K Iwata, P Fons, S Niki, A Yamada, K Matsubara, K Nakahara, T Tanabe, ...
Journal of Crystal Growth 214, 50-54, 2000
1622000
Fabrication of wide-gap Cu (In1− xGax) Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness
S Ishizuka, K Sakurai, A Yamada, K Matsubara, P Fons, K Iwata, ...
Solar energy materials and solar cells 87 (1-4), 541-548, 2005
1482005
Band-gap modified Al-doped transparent conducting films deposited by pulsed laser deposition
K Matsubara, H Tampo, H Shibata, A Yamada, P Fons, K Iwata, S Niki
Applied Physics Letters 85 (8), 1374-1376, 2004
1412004
Gas source molecular beam epitaxy growth of GaN on C-, A-, R-and M-plane sapphire and silica glass substrates
K Iwata, H Asahi, K Asami, R Kuroiwa, S Gonda
Japanese journal of applied physics 36 (6A), L661, 1997
1201997
High quality GaN growth on (0001) sapphire by ion-removed electron cyclotron resonance molecular beam epitaxy and first observation of (2× 2) and (4× 4) reflection high energy …
K Iwata, H Asahi, SJ Yu, K Asami, H Fujita, M Fushida, S Gonda
Japanese journal of applied physics 35 (3A), L289, 1996
1181996
Growth of undoped ZnO films with improved electrical properties by radical source molecular beam epitaxy
K Nakahara, T Tanabe, H Takasu, P Fons, K Iwata, A Yamada, ...
Japanese Journal of Applied Physics 40 (1R), 250, 2001
1172001
Uniaxial locked growth of high-quality epitaxial ZnO films on (1120) α-Al2O3
P Fons, K Iwata, S Niki, A Yamada, K Matsubara, M Watanabe
Journal of Crystal Growth 209 (2-3), 532-536, 2000
1162000
Growth of N-doped and Ga+ N-codoped ZnO films by radical source molecular beam epitaxy
K Nakahara, H Takasu, P Fons, A Yamada, K Iwata, K Matsubara, ...
Journal of crystal growth 237, 503-508, 2002
1082002
Improved external efficiency InGaN-based light-emitting diodes with transparent conductive Ga-doped ZnO as p-electrodes
K Nakahara, K Tamura, M Sakai, D Nakagawa, N Ito, M Sonobe, ...
Japanese journal of applied physics 43 (2A), L180, 2004
1072004
Degenerate layers in epitaxial ZnO films grown on sapphire substrates
H Tampo, A Yamada, P Fons, H Shibata, K Matsubara, K Iwata, S Niki, ...
Applied Physics Letters 84 (22), 4412-4414, 2004
962004
New III–V Compound Semiconductors TlInGaP for 0.9 µm to over 10 µm Wavelength Range Laser Diodes and Their First Successful Growth
H Asahi, K Yamamoto, K Iwata, S Gonda, K Oe
Japanese journal of applied physics 35 (7B), L876, 1996
891996
Optical properties of GaN layers grown on C-, A-, R-, and M-plane sapphire substrates by gas source molecular beam epitaxy
S Tripathy, RK Soni, H Asahi, K Iwata, R Kuroiwa, K Asami, S Gonda
Journal of applied physics 85 (12), 8386-8399, 1999
881999
Room-temperature deposition of Al-doped ZnO films by oxygen radical-assisted pulsed laser deposition
K Matsubara, P Fons, K Iwata, A Yamada, S Niki
Thin Solid Films 422 (1-2), 176-179, 2002
802002
Improvement of Electrical Properties in ZnO Thin Films Grown by Radical Source (RS)‐MBE
K Iwata, P Fons, S Niki, A Yamada, K Matsubara, K Nakahara, H Takasu
physica status solidi (a) 180 (1), 287-292, 2000
692000
Optical properties of GaN-rich side of GaNP and GaNAs alloys grown by gas-source molecular beam epitaxy
R Kuroiwa, H Asahi, K Asami, SJ Kim, K Iwata, S Gonda
Applied physics letters 73 (18), 2630-2632, 1998
671998
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Articles 1–20