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Jimmy Kan
Jimmy Kan
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Title
Cited by
Cited by
Year
Enhancing spontaneous emission rates of molecules using nanopatterned multilayer hyperbolic metamaterials
D Lu, JJ Kan, EE Fullerton, Z Liu
Nature nanotechnology 9 (1), 48-53, 2014
5492014
Field-free switching of a perpendicular magnetic tunnel junction through the interplay of spin–orbit and spin-transfer torques
M Wang, W Cai, D Zhu, Z Wang, J Kan, Z Zhao, K Cao, Z Wang, Y Zhang, ...
Nature electronics 1 (11), 582-588, 2018
3532018
Dynamic switching of the spin circulation in tapered magnetic nanodisks
V Uhlíř, M Urbanek, L Hladik, J Spousta, MY Im, P Fischer, N Eibagi, ...
Nature nanotechnology 8 (5), 341-346, 2013
1292013
Ultralow thermal conductivity of multilayers with highly dissimilar debye temperatures
E Dechaumphai, D Lu, JJ Kan, J Moon, EE Fullerton, Z Liu, R Chen
Nano letters 14 (5), 2448-2455, 2014
1112014
Ultrathin perpendicular pinned layer structure for magnetic tunneling junction devices
K Lee, J Kan, X Zhu, MG Gottwald, C Park, SH Kang
US Patent 9,634,237, 2017
1062017
A study on practically unlimited endurance of STT-MRAM
JJ Kan, C Park, C Ching, J Ahn, Y Xie, M Pakala, SH Kang
IEEE Transactions on Electron Devices 64 (9), 3639-3646, 2017
902017
Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications
Y Lu, T Zhong, W Hsu, S Kim, X Lu, JJ Kan, C Park, WC Chen, X Li, X Zhu, ...
2015 IEEE International Electron Devices Meeting (IEDM), 26.1. 1-26.1. 4, 2015
712015
Scalable and thermally robust perpendicular magnetic tunnel junctions for STT-MRAM
M Gottwald, JJ Kan, K Lee, X Zhu, C Park, SH Kang
Applied Physics Letters 106 (3), 2015
692015
A statistical study of magnetic tunnel junctions for high-density spin torque transfer-MRAM (STT-MRAM)
R Beach, T Min, C Horng, Q Chen, P Sherman, S Le, S Young, K Yang, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
682008
Systematic validation of 2x nm diameter perpendicular MTJ arrays and MgO barrier for sub-10 nm embedded STT-MRAM with practically unlimited endurance
JJ Kan, C Park, C Ching, J Ahn, L Xue, R Wang, A Kontos, S Liang, ...
2016 IEEE International Electron Devices Meeting (IEDM), 27.4. 1-27.4. 4, 2016
632016
Oriented Growth of Single-Crystal Ni Nanowires onto Amorphous SiO2
KT Chan, JJ Kan, C Doran, L Ouyang, DJ Smith, EE Fullerton
Nano letters 10 (12), 5070-5075, 2010
502010
Systematic optimization of 1 Gbit perpendicular magnetic tunnel junction arrays for 28 nm embedded STT-MRAM and beyond
C Park, JJ Kan, C Ching, J Ahn, L Xue, R Wang, A Kontos, S Liang, ...
2015 IEEE International Electron Devices Meeting (IEDM), 26.2. 1-26.2. 4, 2015
482015
Ultra-thin Co/Pd multilayers with enhanced high-temperature annealing stability
M Gottwald, K Lee, JJ Kan, B Ocker, J Wrona, S Tibus, J Langer, SH Kang, ...
Applied Physics Letters 102 (5), 2013
482013
Role of dipolar interactions on the thermal stability of high-density bit-patterned media
N Eibagi, JJ Kan, FE Spada, EE Fullerton
IEEE Magnetics Letters 3, 4500204-4500204, 2012
422012
Anomalously weak scattering in metal-semiconductor multilayer hyperbolic metamaterials
H Shen, D Lu, B VanSaders, JJ Kan, H Xu, EE Fullerton, Z Liu
Physical Review X 5 (2), 021021, 2015
402015
Unified embedded non-volatile memory for emerging mobile markets
K Lee, JJ Kan, SH Kang
Proceedings of the 2014 international symposium on Low power electronics and …, 2014
342014
High-speed, low power spin-orbit torque (SOT) assisted spin-transfer torque magnetic random access memory (STT-MRAM) bit cell array
JJ Kan, C Park, P Wang, KIM Sungryul, SH Kang
US Patent 10,381,060, 2019
322019
Tunable surface plasmon polaritons in Ag composite films by adding dielectrics or semiconductors
D Lu, J Kan, EE Fullerton, Z Liu
Applied Physics Letters 98 (24), 2011
312011
Voltage-switched magneto-resistive random access memory (MRAM) employing separate read operation circuit paths from a shared spin torque write operation circuit path
X Li, JJ Kan, SH Kang, B Yang, G Tao
US Patent 10,224,368, 2019
272019
Spin-orbit-torque magnetoresistive random access memory with voltage-controlled anisotropy
K Lee, J Kan, SH Kang
US Patent 9,589,619, 2017
262017
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