Patrick Naulleau
Cited by
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Real space soft x-ray imaging at 10 nm spatial resolution
W Chao, P Fischer, T Tyliszczak, S Rekawa, E Anderson, P Naulleau
Optics express 20 (9), 9777-9783, 2012
Extreme-ultraviolet phase-shifting point-diffraction interferometer: a wave-front metrology tool with subangstrom reference-wave accuracy
PP Naulleau, KA Goldberg, SH Lee, C Chang, D Attwood, J Bokor
Applied Optics 38 (35), 7252-7263, 1999
Hartmann wave-front measurement at 13.4 nm with λ EUV/120 accuracy
P Mercère, P Zeitoun, M Idir, S Le Pape, D Douillet, X Levecq, G Dovillaire, ...
Optics letters 28 (17), 1534-1536, 2003
Status of EUV micro-exposure capabilities at the ALS using the 0.3-NA MET optic
P Naulleau, KA Goldberg, EH Anderson, K Bradley, R Delano, P Denham, ...
Emerging Lithographic Technologies VIII 5374, 881-891, 2004
Extreme ultraviolet carrier-frequency shearing interferometry of a lithographic four-mirror optical system
PP Naulleau, KA Goldberg, J Bokor
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2000
Method and apparatus for bipolar memory write-verify
N Berger, B Louie, M El-Baraji
US Patent 10,163,479, 2018
Nanofabrication handbook
S Cabrini, S Kawata
CRC press, 2012
Fourier-synthesis custom-coherence illuminator for extreme ultraviolet microfield lithography
PP Naulleau, KA Goldberg, P Batson, J Bokor, P Denham, S Rekawa
Applied Optics 42 (5), 820-826, 2003
Resolution, LER, and sensitivity limitations of photoresists
GM Gallatin, P Naulleau, D Niakoula, R Brainard, E Hassanein, R Matyi, ...
Emerging Lithographic Technologies XII 6921, 69211E, 2008
Critical challenges for EUV resist materials
PP Naulleau, CN Anderson, LM Baclea-An, P Denham, S George, ...
Advances in Resist Materials and Processing Technology XXVIII 7972, 797202, 2011
EUV engineering test stand
DA Tichenor, GD Kubiak, WC Replogle, LE Klebanoff, JB Wronosky, ...
Emerging Lithographic Technologies IV 3997, 48-69, 2000
Line-edge roughness transfer function and its application to determining mask effects in EUV resist characterization
PP Naulleau, GM Gallatin
Applied Optics 42 (17), 3390-3397, 2003
Directly patterned inorganic hardmask for EUV lithography
JK Stowers, A Telecky, M Kocsis, BL Clark, DA Keszler, A Grenville, ...
Extreme Ultraviolet (EUV) Lithography II 7969, 796915, 2011
Fundamental limits to EUV photoresist
GM Gallatin, P Naulleau, R Brainard
Advances in Resist Materials and Processing Technology XXIV 6519, 651911, 2007
Spatial coherence characterization of undulator radiation
C Chang, P Naulleau, E Anderson, D Attwood
Optics communications 182 (1-3), 25-34, 2000
System integration and performance of the EUV engineering test stand
DA Tichenor, AK Ray-Chaudhuri, WC Replogle, RH Stulen, GD Kubiak, ...
Emerging Lithographic Technologies V 4343, 19-37, 2001
Microscopy of extreme ultraviolet lithography masks with 13.2 nm tabletop laser illumination
F Brizuela, Y Wang, CA Brewer, F Pedaci, W Chao, EH Anderson, Y Liu, ...
Optics letters 34 (3), 271-273, 2009
Tunable coherent radiation in the soft X-ray and extreme ultraviolet spectral regions
DT Attwood, P Naulleau, KA Goldberg, E Tejnil, C Chang, R Beguiristain, ...
IEEE Journal of Quantum Electronics 35 (5), 709-720, 1999
EUV microexposures at the ALS using the 0.3-NA MET projection optics
P Naulleau, KA Goldberg, E Anderson, JP Cain, P Denham, B Hoef, ...
Emerging Lithographic Technologies IX 5751, 56-63, 2005
Extreme ultraviolet microexposures at the Advanced Light Source using the 0.3 numerical aperture micro-exposure tool optic
PP Naulleau, KA Goldberg, E Anderson, JP Cain, P Denham, K Jackson, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
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