Formation of radiation defects in silicon at high-energy implantation DI Brinkevich, VB Odzhaev, VS Prosolovich, YN Yankovski Vacuum 78 (2-4), 251-254, 2005 | 11 | 2005 |
Radiation-Stimulated Transformation of the Reflectance Spectra of Diazoquinone–Novolac Photoresist Films Implanted with Antimony Ions AA Kharchenko, DI Brinkevich, VS Prosolovich, SD Brinkevich, ... Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques …, 2020 | 6 | 2020 |
Physical parameters of the broadband noise-generator diodes VV Buslyuk, VB Odzhayev, AK Panfilenko, AN Petlitsky, VS Prosolovich, ... Russian Microelectronics 49, 295-301, 2020 | 5 | 2020 |
Investigation of influence of technological impurities on the I–V characteristics of the bipolar n–p–n-transistor VB Odzhaev, AK Panfilenko, AN Pyatlitski, VS Prosolovich, SV Shvedau, ... Proceedings of the National Academy of Sciences of Belarus. Physical …, 2018 | 4 | 2018 |
Measurement of microhardness of photoresist films on silicon by the scratching method DI Brinkevich, VS Prosolovich, YN Yankovsky Devices methods measurements 7 (1), 77-84, 2016 | 3 | 2016 |
Attenuated Total Reflection Spectra of Nitrided SiO2/Si Structures VB Odzhaev, AN Pyatlitski, VS Prosolovich, NS Kovalchuk, YA Soloviev, ... Journal of Applied Spectroscopy 89 (4), 665-670, 2022 | 2 | 2022 |
Microhardness of silicon implanted by high-energy ions DI Brinkevich, VS Prosolovich, YN Yankovski, SA Vabishchevich, ... VII-th International Conference on Ion Implantation and Other Applications …, 2008 | 1 | 2008 |
The Influence of Uncontrolled Technological Impurities on the Temperature Dependence of the Gain Coefficient of a Bipolar npn–Transistor VB Odzaev, AN Pyatlitski, VA Pilipenko, US Prosolovich, VA Filipenia, ... The Republican Unitary Enterprise Publishing House" Belaruskaya Navuka", 2021 | | 2021 |
Dependence gain of a bipolar transistor on the parameters of ion-implanted emitter and base regions VB Odzhaev, VS Prosolovich, VY Yavid, YN Yankovsky, AK Panfilenko, ... | | 2019 |
FTIR spectra of diazo-quinon novolac photoresist films on silicon implanted by boron ion VS Prosolovich, DI Brinkevich, SD Brinkevich, EV Grinyuk, YN Yankovski | | 2019 |
Modification of the surface layers of silicon single crystals implanted with high energy phosphorus and boron ions DI Brinkevich, SA Vabishchevich, VS Prosolovich, YN Yankovski Proceedings of the National Academy of Sciences of Belarus. Physics and …, 2016 | | 2016 |
Relaxation of Elastic Stresses Near the Surface of the Positive Photoresist due to High Energy Irradiation VS Prosolovich, DI Brinkevich, VB Odzhaev, YN Yankovski 9th International Conference New Electrical and Electronic Technologies and …, 2015 | | 2015 |
Strength of irradiated single-crystal silicon VS Prosolovich, YN Yankovski, NV Vabishchevich, SA Vabishchevich 7th International Conference New Electrical and Electronic Technologies and …, 2011 | | 2011 |
Strength of irradiated single-crystal silicon DI Brinkevich, VS Prosolovich, YN Yankovski, NV Vabishchevich, ... New Electrical and Electronic Technologies and their Industrial …, 2011 | | 2011 |
Features of formation of active areas of npn-transistors for submicronic integrated microcircuits VA Belous, DI Brinkevich, VS Prosolovich, VV Chernyi, YN Yankovski 2010 20th International Crimean Conference" Microwave & Telecommunication …, 2010 | | 2010 |
Peculiarity of Si layers annealing implanted by high energy ions VB Odzhaev, VS Prosolovich, YN Yankovski VII-th International Conference Ion Implantation and Other Applications of …, 2008 | | 2008 |
MOS-transistors on the Si: Ho in the technology of SHF-devices VV Samokhval, DI Brinkevich, VS Prosolovich, YN Yankovski 2004 14th International Crimean Conference" Microwave and Telecommunication …, 2004 | | 2004 |
Impurity-defect interaction in the Yb {sup+} implantation silicon DI Brinkevich, VB Odzhaev, VS Prosolovich, YN Yankovski | | 2004 |
Germanium-doped epitaxial silicon layers for SHF ICs DI Brinkevich, VS Prosolovich, ON Yankovski, YN Yankovski 13th International Crimean Conference Microwave and Telecommunication …, 2003 | | 2003 |
Lanthanides application in planar technology of microwave devices production DI Brinkevich, VS Prosolovich, YN Yankovski 12th International Conference Microwave and Telecommunication Technology …, 2002 | | 2002 |