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MANOJ KUMAR CHANDRA MOHAN
MANOJ KUMAR CHANDRA MOHAN
Chonnam National University, South Korea
Verified email at ntu.edu.sg - Homepage
Title
Cited by
Cited by
Year
Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal–oxide–semiconductor-compatible non-gold metal stack
S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, CM Kumar, KL Teo, ...
Applied Physics Express 6 (1), 016501, 2012
702012
Low-contact-resistance non-gold Ta/Si/Ti/Al/Ni/Ta Ohmic contacts on undoped AlGaN/GaN high-electron-mobility transistors grown on silicon
Y Li, GI Ng, S Arulkumaran, CMM Kumar, KS Ang, MJ Anand, H Wang, ...
Applied Physics Express 6 (11), 116501, 2013
452013
High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrate
S Arulkumaran, K Ranjan, GI Ng, CMM Kumar, S Vicknesh, SB Dolmanan, ...
IEEE Electron Device Letters 35 (10), 992-994, 2014
382014
Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)
MJ Anand, GI Ng, S Arulkumaran, M Kumar, K Ranjan, S Vicknesh, ...
Applied Physics Letters 106 (8), 2015
282015
Record-low contact resistance for InAlN/AlN/GaN high electron mobility transistors on Si with non-gold metal
S Arulkumaran, GI Ng, K Ranjan, CMM Kumar, SC Foo, KS Ang, ...
Japanese Journal of Applied Physics 54 (4S), 04DF12, 2015
222015
In0.17Al0.83N/AlN/GaN Triple T-shape Fin-HEMTs with gm=646 mS/mm, ION=1.03 A/mm, IOFF=1.13 µA/mm, SS=82 mV/dec and DIBL=28 mV/V at VD=0.5 V
S Arulkumaran, GI Ng, CM Manojkumar, K Ranjan, KL Teo, OF Shoron, ...
2014 IEEE International Electron Devices Meeting, 25.6. 1-25.6. 4, 2014
212014
Cathodoluminescence of 2-inch Ultraviolet-Light-Source Tube Based on the Integration of AlGaN Materials and Carbon Nanotubes Field Emitters
NLJKL Wael Z. Tawfik, C. M. Manoj Kumar, Joonmo Park, Sang Kyun Shim ...
Journal of Materials Chemistry C, 11540, 2019
20*2019
Electron velocity of 6× 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors
S Arulkumaran, GI Ng, M Kumar, K Ranjan, KL Teo, OF Shoron, S Rajan, ...
Applied Physics Letters 106 (5), 2015
202015
Conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts in AlGaN/GaN high-electron-mobility transistors
Y Li, GI Ng, S Arulkumaran, G Ye, CMM Kumar, MJ Anand, ZH Liu
Applied Physics Express 8 (4), 041001, 2015
152015
High-Photocurrent and Wide-Bandwidth UTC Photodiodes with Dipole-Doped Structure
JG Q. Q. Meng, H. Wang, C. Y. Liu, K. S. Ang, X. Guo, B. Gao, Y. Tian, C. M ...
IEEE Photonic Technology Letters 26 (19), 1952, 2014
152014
GaN-on-silicon integration technology
GI Ng, S Arulkumaran, S Vicknesh, H Wang, KS Ang, CMM Kumar, ...
2012 IEEE International Symposium on Radio-Frequency Integration Technology …, 2012
102012
Nanopatterned sapphire substrate to enhance the efficiency of AlGaN-based UVC light source tube with CNT electron-beam
SK Shim, WZ Tawfik, CMM Kumar, S Liu, X Wang, N Lee, JK Lee
Journal of Materials Chemistry C 8 (48), 17336-17341, 2020
82020
Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)
SAGIN L. Ravikiran, K. Radhakrishnan,S. Munawar Basha, N. Dharmarasu, M ...
Journal of Applied Physics 117, 245305, 2015
62015
High‐Efficiency E‐Beam Pumped Deep‐Ultraviolet Surface Emitter Based on AlGaN Ultra‐Thin Staggered Quantum Wells
Y Wang, Y Yuan, R Tao, S Liu, T Wang, S Sheng, P Quach, MK Cm, ...
Advanced Optical Materials 10 (18), 2200011, 2022
42022
Optimized aluminum reflector for enhancement of UVC cathodoluminescence based-AlGaN materials with carbon nanotube field emitters
MKC Mohan, SK Shim, JK Lee, N Jang, N Lee, WZ Tawfik
Molecules 26 (13), 4025, 2021
42021
Ultraviolet-Cathodoluminescent 330 nm light source from a 2-inch wide CNT electron-beam emission under DC electric field
MKC Mohan, SK Shim, MU Cho, TK Kim, JS Kwak, J Park, N Jang, ...
Current Applied Physics 28, 72-77, 2021
22021
Record low contact resistance for InAlN/GaN HEMTs on Si with non-gold metal
S Arulkumaran, GI Ng, K Ranjan, CMM Kumar, SC Foo, KS Ang, ...
12015
MOCVD Growth and Fabrication of High Power MUTC Photodiodes Using InGaAs‐InP System
N Singh, CKF Ho, GX Tina, MK Chandra Mohan, KEK Lee, H Wang, ...
Journal of Nanomaterials 2015 (1), 436851, 2015
12015
AlGaAs/InGaAs thermopiles for infrared imaging using surface bulk micromachining technology
KS Ang, R Hofstetter, H Wang, K Manoj, LN Retnam, GI Ng, M Abe
2013 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS …, 2013
12013
Fabrication and characterization of uni-traveling-carrier photodetectors (UTC-PDs) with dipole-doped structure at InGaAs/InP interface
QQ Meng, CY Liu, H Wang, KS Ang, K Manoj, TX Guo
2013 IEEE 5th International Nanoelectronics Conference (INEC), 338-341, 2013
12013
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