| Low-temperature growth of GaAs and AlAs-GaAs quantum-well layers by modified molecular beam epitaxy Y Horikoshi, M Kawashima, H Yamaguchi Japanese Journal of Applied Physics 25 (10A), L868, 1986 | 470 | 1986 |
| Microscopic thickness determination of thin graphite films formed on SiC from quantized oscillation in reflectivity of low-energy electrons H Hibino, H Kageshima, F Maeda, M Nagase, Y Kobayashi, H Yamaguchi Physical Review B 77 (7), 075413, 2008 | 459 | 2008 |
| Migration-enhanced epitaxy of GaAs and AlGaAs Y Horikoshi, M Kawashima, H Yamaguchi Japanese journal of applied physics 27 (2R), 169, 1988 | 458 | 1988 |
| Bit storage and bit flip operations in an electromechanical oscillator I Mahboob, H Yamaguchi Nature nanotechnology 3 (5), 275-279, 2008 | 371 | 2008 |
| Coherent phonon manipulation in coupled mechanical resonators H Okamoto, A Gourgout, CY Chang, K Onomitsu, I Mahboob, EY Chang, ... Nature Physics 9 (8), 480-484, 2013 | 350 | 2013 |
| Motion detection of a micromechanical resonator embedded in a dc SQUID S Etaki, M Poot, I Mahboob, K Onomitsu, H Yamaguchi, HSJ Van der Zant Nature Physics 4 (10), 785-788, 2008 | 229 | 2008 |
| Interconnect-free parallel logic circuits in a single mechanical resonator I Mahboob, E Flurin, K Nishiguchi, A Fujiwara, H Yamaguchi Nature communications 2 (1), 198, 2011 | 199 | 2011 |
| Growth process of III–V compound semiconductors by migration-enhanced epitaxy Y Horikoshi, H Yamaguchi, F Briones, M Kawashima Journal of crystal growth 105 (1-4), 326-338, 1990 | 179 | 1990 |
| Phonon lasing in an electromechanical resonator I Mahboob, K Nishiguchi, A Fujiwara, H Yamaguchi Physical review letters 110 (12), 127202, 2013 | 169 | 2013 |
| Phonon-cavity electromechanics I Mahboob, K Nishiguchi, H Okamoto, H Yamaguchi Nature Physics 8 (5), 387-392, 2012 | 165 | 2012 |
| Phonon waveguides for electromechanical circuits D Hatanaka, I Mahboob, K Onomitsu, H Yamaguchi Nature nanotechnology 9 (7), 520-524, 2014 | 158 | 2014 |
| Atomic-scale imaging of strain relaxation via misfit dislocations in highly mismatched semiconductor heteroepitaxy: InAs/GaAs (111) A H Yamaguchi, JG Belk, XM Zhang, JL Sudijono, MR Fahy, TS Jones, ... Physical Review B 55 (3), 1337, 1997 | 152 | 1997 |
| A strict experimental test of macroscopic realism in a superconducting flux qubit GC Knee, K Kakuyanagi, MC Yeh, Y Matsuzaki, H Toida, H Yamaguchi, ... Nature communications 7 (1), 13253, 2016 | 148 | 2016 |
| Conductance modulation by individual acceptors in Si nanoscale field-effect transistors Y Ono, K Nishiguchi, A Fujiwara, H Yamaguchi, H Inokawa, Y Takahashi Applied Physics Letters 90 (10), 2007 | 140 | 2007 |
| Inhibitions of three dimensional island formation in InAs films grown on GaAs (111) A surface by molecular beam epitaxy H Yamaguchi, MR Fahy, BA Joyce Applied physics letters 69 (6), 776-778, 1996 | 137 | 1996 |
| Surface structure transitions on InAs and GaAs (001) surfaces H Yamaguchi, Y Horikoshi Physical Review B 51 (15), 9836, 1995 | 124 | 1995 |
| Imaging of Friedel Oscillation Patterns of Two-Dimensionally Accumulated Electrons at Epitaxially Grown InAs(111) Surfaces K Kanisawa, MJ Butcher, H Yamaguchi, Y Hirayama Physical review letters 86 (15), 3384, 2001 | 120 | 2001 |
| Stacking domains of epitaxial few-layer graphene on SiC (0001) H Hibino, S Mizuno, H Kageshima, M Nagase, H Yamaguchi Physical Review B 80 (8), 085406, 2009 | 110 | 2009 |
| A scanning tunneling microscopy-Reflection high energy electron diffraction-Rate equation study of the molecular beam epitaxial growth of InAs on GaAs (001),(110) and (111) A … BA Joyce, JL Sudijono, JG Belk, H Yamaguchi, XM Zhang, HT Dobbs, ... Japanese journal of applied physics 36 (6S), 4111, 1997 | 109 | 1997 |
| An electromechanical ising hamiltonian I Mahboob, H Okamoto, H Yamaguchi Science advances 2 (6), e1600236, 2016 | 105 | 2016 |
Imran MahboobNTT Basic Research LabsVerified email at lab.ntt.co.jp
