| Electrical characteristics of metal-insulator-semiconductor structures with atomic layer deposited Al2O3, HfO2, and nanolaminates on different silicon substrates F Campabadal, JM Rafí, M Zabala, O Beldarrain, A Faigón, H Castán, ... Journal of Vacuum Science & Technology B 29 (1), 2011 | 62 | 2011 |
| Extension of the measurement range of MOS dosimeters using radiation induced charge neutralization A Faigón, J Lipovetzky, E Redin, G Krusczenski IEEE Transactions on Nuclear Science 55 (4), 2141-2147, 2008 | 37 | 2008 |
| Field oxide n-channel mos dosimeters fabricated in cmos processes J Lipovetzky, MA García-Inza, S Carbonetto, MJ Carra, E Redin, ... IEEE Transactions on Nuclear Science 60 (6), 4683-4691, 2013 | 31 | 2013 |
| Electrically erasable metal–oxide–semiconductor dosimeters J Lipovetzky, EG Redin, A Faigon IEEE Transactions on Nuclear Science 54 (4), 1244-1250, 2007 | 31 | 2007 |
| Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry SH Carbonetto, MAG Inza, J Lipovetzky, EG Redin, LS Salomone, ... IEEE Transactions on Nuclear Science 58 (6), 3348-3353, 2011 | 27 | 2011 |
| Switched bias differential MOSFET dosimeter M Garcia-Inza, S Carbonetto, J Lipovetzky, MJ Carra, LS Salomone, ... IEEE Transactions on Nuclear Science 61 (3), 1407-1413, 2014 | 22 | 2014 |
| Reducing measurement uncertainties using bias cycled measurement in MOS dosimetry at different temperatures J Lipovetzky, EG Redin, MAG Inza, S Carbonetto, A Faigon IEEE Transactions on Nuclear Science 57 (2), 848-853, 2010 | 22 | 2010 |
| Analysis of experimental current oscillations in MOS structures using a semi-empirical tunneling model E Miranda, A Faigon, F Campabadal Solid-State Electronics 41 (1), 67-73, 1997 | 18 | 1997 |
| Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications L Sambuco Salomone, J Lipovetzky, SH Carbonetto, G Inza, EG Redin, ... Journal of Applied Physics 113 (7), 2013 | 17 | 2013 |
| Floating gate PMOS dosimeters under bias controlled cycled measurement MG Inza, J Lipovetzky, EG Redin, S Carbonetto, A Faigon IEEE Transactions on Nuclear Science 58 (3), 808-812, 2011 | 17 | 2011 |
| CMOS differential and amplified dosimeter with field oxide N-channel MOSFETs S Carbonetto, M Garcia-Inza, J Lipovetzky, MJ Carra, E Redin, ... IEEE Transactions on Nuclear Science 61 (6), 3466-3471, 2014 | 15 | 2014 |
| Radiation sensor based on MOSFETs mismatch amplification for radiotherapy applications M Garcia-Inza, SH Carbonetto, J Lipovetzky, A Faigon IEEE Transactions on Nuclear Science 63 (3), 1784-1789, 2016 | 14 | 2016 |
| Numerical modeling of MOS dosimeters under switched bias irradiations LS Salomone, A Faigón, EG Redin IEEE Transactions on Nuclear Science 62 (4), 1665-1673, 2015 | 14 | 2015 |
| A semi-empirical model for the tunnel current-voltage characteristics in Al-SiO2-Si (p) structures A Faigon, F Campabadal Solid-State Electronics 39 (2), 251-260, 1996 | 14 | 1996 |
| Trapping effects in thin oxynitride layers in metal‐insulator‐semiconductor devices A Faigon, J Shappir Journal of applied physics 58 (12), 4633-4637, 1985 | 14 | 1985 |
| Epidermal characters of Pterocactus (Opuntioideae, Cactaceae) A Faigón, BG Galati, S Rosenfeldt, R Kiesling Haseltonia 2011 (16), 57-66, 2011 | 13 | 2011 |
| Modeling of the I–V characteristics of high-field stressed MOS structures using a Fowler–Nordheim-type tunneling expression E Miranda, G Redin, A Faigón Microelectronics Reliability 42 (6), 935-941, 2002 | 13 | 2002 |
| An effective-field approach for the Fowler–Nordheim tunneling current through a metal–oxide–semiconductor charged barrier E Miranda, G Redin, A Faigon Journal of applied physics 82 (3), 1262-1265, 1997 | 13 | 1997 |
| New fowler-nordheim injection, charge neutralization, and gamma tests on the REM RFT300 RADFET dosimeter J Lipovetzky, A Holmes-Siedle, MG Inza, S Carbonetto, E Redin, A Faigon IEEE Transactions on Nuclear Science 59 (6), 3133-3140, 2012 | 12 | 2012 |
| Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications H García, MB González, MM Mallol, H Castán, S Dueñas, F Campabadal, ... Journal of Electronic Materials 47, 5013-5018, 2018 | 11 | 2018 |
