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ChoongHyun Lee
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Resistive memory with a plurality of resistive random access memory cells each comprising a transistor and a resistive element
P Xu, K Cheng, J Li, CH Lee
US Patent 10,522,594, 2019
2392019
Plasma-enhanced atomic layer deposition of ruthenium thin films
OK Kwon, SH Kwon, HS Park, SW Kang
Electrochemical and solid-state letters 7 (4), C46, 2004
2242004
Desorption kinetics of GeO from GeO2/Ge structure
SK Wang, K Kita, CH Lee, T Tabata, T Nishimura, K Nagashio, A Toriumi
Journal of applied physics 108 (5), 2010
2112010
Ge/GeO2 interface control with high pressure oxidation for improving electrical characteristics
CH Lee, T Tabata, T Nishimura, K Nagashio, K Kita, A Toriumi
ECS Transactions 19 (1), 165, 2009
1862009
Opportunities and challenges for Ge CMOS–Control of interfacing field on Ge is a key
A Toriumi, T Tabata, CH Lee, T Nishimura, K Kita, K Nagashio
Microelectronic Engineering 86 (7-9), 1571-1576, 2009
1802009
A 7nm FinFET technology featuring EUV patterning and dual strained high mobility channels
R Xie, P Montanini, K Akarvardar, N Tripathi, B Haran, S Johnson, T Hook, ...
2016 IEEE international electron devices meeting (IEDM), 2.7. 1-2.7. 4, 2016
1772016
High-Electron-Mobilityn-MOSFETs With Two-Step Oxidation
CH Lee, T Nishimura, K Nagashio, K Kita, A Toriumi
IEEE transactions on electron devices 58 (5), 1295-1301, 2011
1562011
Ge MOSFETs performance: Impact of Ge interface passivation
CH Lee, T Nishimura, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi
2010 International Electron Devices Meeting, 18.1. 1-18.1. 4, 2010
1072010
High-electron-mobility Ge n-channel metal–oxide–semiconductor field-effect transistors with high-pressure oxidized Y2O3
T Nishimura, CH Lee, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi
Applied physics express 4 (6), 064201, 2011
972011
Record-high electron mobility in Ge n-MOSFETs exceeding Si universality
CH Lee, T Nishimura, N Saido, K Nagashio, K Kita, A Toriumi
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
832009
Material potential and scalability challenges of germanium CMOS
A Toriumi, CH Lee, SK Wang, T Tabata, M Yoshida, DD Zhao, ...
2011 International Electron Devices Meeting, 28.4. 1-28.4. 4, 2011
592011
Characterization of electron mobility in ultrathin body germanium-on-insulator metal-insulator-semiconductor field-effect transistors
C Hyun Lee, T Nishimura, T Tabata, DD Zhao, K Nagashio, A Toriumi
Applied Physics Letters 102 (23), 2013
552013
Oxygen potential engineering of interfacial layer for deep sub-nm EOT high-k gate stacks on Ge
CH Lee, C Lu, T Tabata, WF Zhang, T Nishimura, K Nagashio, A Toriumi
2013 IEEE International Electron Devices Meeting, 2.5. 1-2.5. 4, 2013
532013
Vertically stacked nFET and pFET with dual work function
A Reznicek, T Ando, J Zhang, CH Lee, P Hashemi
US Patent 10,546,925, 2020
472020
Enhancement of thermal stability and water resistance in yttrium-doped GeO2/Ge gate stack
C Lu, C Hyun Lee, W Zhang, T Nishimura, K Nagashio, A Toriumi
Applied Physics Letters 104 (9), 2014
462014
Structural and thermodynamic consideration of metal oxide doped GeO2 for gate stack formation on germanium
C Lu, CH Lee, W Zhang, T Nishimura, K Nagashio, A Toriumi
Journal of Applied Physics 116 (17), 2014
452014
Full air-gap spacers for gate-all-around nanosheet field effect transistors
T Ando, P Hashemi, CH Lee, A Reznicek, J Zhang
US Patent 10,553,696, 2020
412020
Junctionless Ge p-channel metal–oxide–semiconductor field-effect transistors fabricated on ultrathin Ge-on-insulator substrate
DD Zhao, T Nishimura, CH Lee, K Nagashio, K Kita, A Toriumi
Applied physics express 4 (3), 031302, 2011
402011
Formation of self-limited inner spacer for gate-all-around nanosheet FET
J Zhang, T Ando, CH Lee, A Reznicek, P Hashemi
US Patent 10,553,679, 2020
392020
Comprehensive study of GeO2 oxidation, GeO desorption and GeO2-metal interaction -understanding of Ge processing kinetics for perfect interface control-
K Kita, SK Wang, M Yoshida, CH Lee, K Nagashio, T Nishimura, ...
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
362009
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