Alessandro Giussani
Alessandro Giussani
Silanna Semiconductor
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Giant Rashba‐Type Spin Splitting in Ferroelectric GeTe (111)
M Liebmann, C Rinaldi, D Di Sante, J Kellner, C Pauly, RN Wang, ...
Advanced Materials 28 (3), 560-565, 2016
Metal-insulator transition driven by vacancy ordering in GeSbTe phase change materials
V Bragaglia, F Arciprete, W Zhang, AM Mio, E Zallo, K Perumal, ...
Scientific reports 6 (1), 23843, 2016
Surface reconstruction-induced coincidence lattice formation between two-dimensionally bonded materials and a three-dimensionally bonded substrate
JE Boschker, J Momand, V Bragaglia, R Wang, K Perumal, A Giussani, ...
Nano letters 14 (6), 3534-3538, 2014
Robust topological surface states in SbTe layers as seen from the weak antilocalization effect
Y Takagaki, A Giussani, K Perumal, R Calarco, KJ Friedland
Physical Review B 86 (12), 125137, 2012
Toward truly single crystalline GeTe films: The relevance of the substrate surface
R Wang, JE Boschker, E Bruyer, DD Sante, S Picozzi, K Perumal, ...
The Journal of Physical Chemistry C 118 (51), 29724-29730, 2014
Ferroelectric switching in epitaxial GeTe films
AV Kolobov, DJ Kim, A Giussani, P Fons, J Tominaga, R Calarco, ...
APL Materials 2 (6), 066101, 2014
Mirror-symmetric Magneto-optical Kerr Rotation using Visible Light in [(GeTe)2(Sb2Te3)1]n Topological Superlattices
D Bang, H Awano, J Tominaga, AV Kolobov, P Fons, Y Saito, K Makino, ...
Scientific reports 4 (1), 5727, 2014
On the epitaxy of germanium telluride thin films on silicon substrates
A Giussani, K Perumal, M Hanke, P Rodenbach, H Riechert, R Calarco
physica status solidi (b) 249 (10), 1939-1944, 2012
Atomically smooth and single crystalline heterostructures: Structural and chemical composition study
A Giussani, P Rodenbach, P Zaumseil, J Dabrowski, R Kurps, G Weidner, ...
Journal of Applied Physics 105 (3), 033512, 2009
Crystalline GeTe-based phase-change alloys: Disorder in order
M Krbal, AV Kolobov, P Fons, J Tominaga, SR Elliott, J Hegedus, ...
Physical Review B 86 (4), 045212, 2012
Single crystalline heterostructures as novel engineered buffer approach for GaN integration on Si (111)
L Tarnawska, A Giussani, P Zaumseil, MA Schubert, R Paszkiewicz, ...
Journal of Applied Physics 108 (6), 063502, 2010
Structural change upon annealing of amorphous GeSbTe grown on Si (111)
V Bragaglia, B Jenichen, A Giussani, K Perumal, H Riechert, R Calarco
Journal of Applied Physics 116 (5), 054913, 2014
Insight into the growth and control of single-crystal layers of Ge–Sb–Te phase-change material
F Katmis, R Calarco, K Perumal, P Rodenbach, A Giussani, M Hanke, ...
Crystal Growth & Design 11 (10), 4606-4610, 2011
Engineered Si wafers: On the role of oxide heterostructures as buffers for the integration of alternative semiconductors
T Schroeder, A Giussani, J Dabrowski, P Zaumseil, HJ Müssig, O Seifarth, ...
physica status solidi (c) 6 (3), 653-662, 2009
Evidence for topological band inversion of the phase change material Ge2Sb2Te5
C Pauly, M Liebmann, A Giussani, J Kellner, S Just, J Sánchez-Barriga, ...
Applied Physics Letters 103 (24), 243109, 2013
The influence of lattice oxygen on the initial growth behavior of heteroepitaxial Ge layers on single crystalline support systems
A Giussani, O Seifarth, P Rodenbach, HJ Müssig, P Zaumseil, ...
Journal of Applied Physics 103 (8), 084110, 2008
Epitaxial phase‐change materials
P Rodenbach, R Calarco, K Perumal, F Katmis, M Hanke, A Proessdorf, ...
physica status solidi (RRL)-Rapid Research Letters 6 (11), 415-417, 2012
Epitaxy of single crystalline films on Si(111)
T Weisemoeller, C Deiter, F Bertram, S Gevers, A Giussani, P Zaumseil, ...
Applied Physics Letters 93 (3), 032905, 2008
Postdeposition annealing induced transition from hexagonal to cubic films on Si(111)
T Weisemoeller, F Bertram, S Gevers, A Greuling, C Deiter, H Tobergte, ...
Journal of Applied Physics 105 (12), 124108, 2009
Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials
KV Mitrofanov, P Fons, K Makino, R Terashima, T Shimada, AV Kolobov, ...
Scientific reports 6 (1), 20633, 2016
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