Marko J. Tadjer
TitleCited byYear
A review of Ga2O3 materials, processing, and devices
SJ Pearton, J Yang, PH Cary IV, F Ren, J Kim, MJ Tadjer, MA Mastro
Applied Physics Reviews 5 (1), 011301, 2018
Technique for the dry transfer of epitaxial graphene onto arbitrary substrates
JD Caldwell, TJ Anderson, JC Culbertson, GG Jernigan, KD Hobart, ...
ACS nano 4 (2), 1108-1114, 2010
Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges
JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ...
Advanced Electronic Materials 4 (1), 1600501, 2018
Quantifying pulsed laser induced damage to graphene
M Currie, JD Caldwell, FJ Bezares, J Robinson, T Anderson, H Chun, ...
Applied Physics Letters 99 (21), 211909, 2011
A (001) β-Ga2O3 MOSFET with+ 2.9 V threshold voltage and HfO2 gate dielectric
MJ Tadjer, NA Mahadik, VD Wheeler, ER Glaser, L Ruppalt, AD Koehler, ...
ECS Journal of Solid State Science and Technology 5 (9), P468, 2016
Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat-spreading films
MJ Tadjer, TJ Anderson, KD Hobart, TI Feygelson, JD Caldwell, CR Eddy, ...
IEEE electron device letters 33 (1), 23-25, 2011
Homoepitaxial growth of β-Ga2O3 thin films by low pressure chemical vapor deposition
S Rafique, L Han, MJ Tadjer, JA Freitas Jr, NA Mahadik, H Zhao
Applied Physics Letters 108 (18), 182105, 2016
Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates
MJ Tadjer, MA Mastro, NA Mahadik, M Currie, VD Wheeler, JA Freitas, ...
Journal of Electronic Materials 45 (4), 2031-2037, 2016
Heteroepitaxy of N-type β-Ga2O3 thin films on sapphire substrate by low pressure chemical vapor deposition
S Rafique, L Han, AT Neal, S Mou, MJ Tadjer, RH French, H Zhao
Applied Physics Letters 109 (13), 132103, 2016
Activation of Mg implanted in GaN by multicycle rapid thermal annealing
TJ Anderson, BN Feigelson, FJ Kub, MJ Tadjer, KD Hobart, MA Mastro, ...
Electronics letters 50 (3), 197-198, 2014
Simulation of thermal management in AlGaN/GaN HEMTs with integrated diamond heat spreaders
A Wang, MJ Tadjer, F Calle
Semiconductor science and technology 28 (5), 055010, 2013
Perspective: Ga2O3 for ultra-high power rectifiers and MOSFETS
SJ Pearton, F Ren, M Tadjer, J Kim
Journal of Applied Physics 124 (22), 220901, 2018
2300V reverse breakdown voltage Ga2O3 schottky rectifiers
J Yang, F Ren, M Tadjer, SJ Pearton, A Kuramata
ECS Journal of Solid State Science and Technology 7 (5), Q92, 2018
Direct comparison of traps in InAlN/GaN and AlGaN/GaN high electron mobility transistors using constant drain current deep level transient spectroscopy
A Sasikumar, AR Arehart, S Martin-Horcajo, MF Romero, Y Pei, D Brown, ...
Applied Physics Letters 103 (3), 033509, 2013
Band alignments of atomic layer deposited ZrO2 and HfO2 high-k dielectrics with (-201) β-Ga2O3
VD Wheeler, DI Shahin, MJ Tadjer, CR Eddy
ECS Journal of Solid State Science and Technology 6 (2), Q3052-Q3055, 2017
Atomic layer epitaxy AlN for enhanced AlGaN/GaN HEMT passivation
AD Koehler, N Nepal, TJ Anderson, MJ Tadjer, KD Hobart, CR Eddy, ...
IEEE electron device letters 34 (9), 1115-1117, 2013
Simple and accurate method to estimate channel temperature and thermal resistance in AlGaN/GaN HEMTs
S Martin-Horcajo, A Wang, MF Romero, MJ Tadjer, F Calle
IEEE transactions on electron devices 60 (12), 4105-4111, 2013
An AlN/ultrathin AlGaN/GaN HEMT structure for enhancement-mode operation using selective etching
TJ Anderson, MJ Tadjer, MA Mastro, JK Hite, KD Hobart, CR Eddy, FJ Kub
IEEE electron device letters 30 (12), 1251-1253, 2009
Vertical GaN junction barrier Schottky rectifiers by selective ion implantation
Y Zhang, Z Liu, MJ Tadjer, M Sun, D Piedra, C Hatem, TJ Anderson, ...
IEEE Electron Device Letters 38 (8), 1097-1100, 2017
Solar-blind metal-semiconductor-metal photodetectors based on an exfoliated β-Ga2O3 micro-flake
S Oh, MA Mastro, MJ Tadjer, J Kim
ECS Journal of Solid State Science and Technology 6 (8), Q79-Q83, 2017
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Articles 1–20