Raghavan Nagarajan
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Resistive switching: from fundamentals of nanoionic redox processes to memristive device applications
D Ielmini, R Waser
John Wiley & Sons, 2015
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
Intrinsic switching variability in HfO2RRAM
A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ...
2013 5th IEEE International Memory Workshop, 30-33, 2013
Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current
YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ...
2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013
A framework to practical predictive maintenance modeling for multi-state systems
CM Tan, N Raghavan
Reliability Engineering & System Safety 93 (8), 1138-1150, 2008
Intrinsic nanofilamentation in resistive switching
X Wu, D Cha, M Bosman, N Raghavan, DB Migas, VE Borisenko, ...
Journal of Applied Physics 113 (11), 114503, 2013
Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability
N Raghavan, R Degraeve, A Fantini, L Goux, S Strangio, B Govoreanu, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 5E. 3.1-5E. 3.7, 2013
Causes and consequences of the stochastic aspect of filamentary RRAM
R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, B Govoreanu, ...
Microelectronic Engineering 147, 171-175, 2015
Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its impact on OFF-state reliability
N Raghavan, R Degraeve, A Fantini, L Goux, DJ Wouters, ...
2013 IEEE International Electron Devices Meeting, 21.1. 1-21.1. 4, 2013
Heuristic Kalman optimized particle filter for remaining useful life prediction of lithium-ion battery
PLT Duong, N Raghavan
Microelectronics Reliability 81, 232-243, 2018
Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics
K Shubhakar, KL Pey, N Raghavan, SS Kushvaha, M Bosman, Z Wang, ...
Microelectronic engineering 109, 364-369, 2013
Fabrication of RRAM cell using CMOS compatible processes
W Liu, KL Pey, N Raghavan, CM Ng
US Patent App. 13/052,864, 2012
Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM
N Raghavan, KL Pey, W Liu, X Wu, X Li, M Bosman
Microelectronic Engineering 88 (7), 1124-1128, 2011
Role of oxygen vacancies in -based gate stack breakdown
X Wu, DB Migas, X Li, M Bosman, N Raghavan, VE Borisenko, KL Pey
Applied Physics Letters 96 (17), 172901, 2010
RTN insight to filamentary instability and disturb immunity in ultra-low power switching HfOx and AlOx RRAM
N Raghavan, R Degraeve, L Goux, A Fantini, DJ Wouters, ...
2013 Symposium on VLSI Technology, T164-T165, 2013
Hourglass concept for RRAM: a dynamic and statistical device model
R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, YY Chen, ...
Proceedings of the 21th International Symposium on the Physical and Failureá…, 2014
High-κ dielectric breakdown in nanoscale logic devices–Scientific insight and technology impact
N Raghavan, KL Pey, K Shubhakar
Microelectronics Reliability 54 (5), 847-860, 2014
Conductive atomic force microscope study of bipolar and threshold resistive switching in 2D hexagonal boron nitride films
A Ranjan, N Raghavan, SJ O’shea, S Mei, M Bosman, K Shubhakar, ...
Scientific reports 8 (1), 1-9, 2018
Understanding of the intrinsic characteristics and memory trade-offs of sub-μA filamentary RRAM operation
L Goux, A Fantini, R Degraeve, N Raghavan, R Nigon, S Strangio, G Kar, ...
2013 Symposium on VLSI Technology, T162-T163, 2013
Performance and reliability trade-offs for high-κ RRAM
N Raghavan
Microelectronics Reliability 54 (9-10), 2253-2257, 2014
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