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Nagarajan Raghavan
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Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
6302019
Resistive switching: from fundamentals of nanoionic redox processes to memristive device applications
D Ielmini, R Waser
John Wiley & Sons, 2015
5942015
Intrinsic switching variability in HfO2RRAM
A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ...
2013 5th IEEE International Memory Workshop, 30-33, 2013
2622013
Standards for the characterization of endurance in resistive switching devices
M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suņe, AJ Kenyon, ...
ACS nano 15 (11), 17214-17231, 2021
1812021
Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current
YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ...
2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013
1382013
Causes and consequences of the stochastic aspect of filamentary RRAM
R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, B Govoreanu, ...
Microelectronic Engineering 147, 171-175, 2015
1342015
A framework to practical predictive maintenance modeling for multi-state systems
CM Tan, N Raghavan
Reliability Engineering & System Safety 93 (8), 1138-1150, 2008
1182008
Heuristic Kalman optimized particle filter for remaining useful life prediction of lithium-ion battery
PLT Duong, N Raghavan
Microelectronics Reliability 81, 232-243, 2018
1122018
Intrinsic nanofilamentation in resistive switching
X Wu, D Cha, M Bosman, N Raghavan, DB Migas, VE Borisenko, ...
Journal of Applied Physics 113 (11), 2013
872013
Data-driven design space exploration and exploitation for design for additive manufacturing
Y Xiong, PLT Duong, D Wang, SI Park, Q Ge, N Raghavan, DW Rosen
Journal of Mechanical Design 141 (10), 101101, 2019
862019
Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability
N Raghavan, R Degraeve, A Fantini, L Goux, S Strangio, B Govoreanu, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 5E. 3.1-5E. 3.7, 2013
842013
Conductive atomic force microscope study of bipolar and threshold resistive switching in 2D hexagonal boron nitride films
A Ranjan, N Raghavan, SJ O’shea, S Mei, M Bosman, K Shubhakar, ...
Scientific reports 8 (1), 2854, 2018
682018
Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its impact on OFF-state reliability
N Raghavan, R Degraeve, A Fantini, L Goux, DJ Wouters, ...
2013 IEEE International Electron Devices Meeting, 21.1. 1-21.1. 4, 2013
682013
Hardware implementation of memristor-based artificial neural networks
F Aguirre, A Sebastian, M Le Gallo, W Song, T Wang, JJ Yang, W Lu, ...
Nature communications 15 (1), 1974, 2024
672024
A novel framework for semiconductor manufacturing final test yield classification using machine learning techniques
D Jiang, W Lin, N Raghavan
Ieee Access 8, 197885-197895, 2020
622020
Nanostructure and nanomaterial characterization, growth mechanisms, and applications
CI Ossai, N Raghavan
Nanotechnology Reviews 7 (2), 209-231, 2018
602018
Evolution of Filament Formation in Ni/HfO2/SiOx/Si‐Based RRAM Devices
X Wu, S Mei, M Bosman, N Raghavan, X Zhang, D Cha, K Li, KL Pey
Advanced Electronic Materials 1 (11), 1500130, 2015
602015
Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM
N Raghavan, KL Pey, W Liu, X Wu, X Li, M Bosman
Microelectronic Engineering 88 (7), 1124-1128, 2011
552011
Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics
K Shubhakar, KL Pey, N Raghavan, SS Kushvaha, M Bosman, Z Wang, ...
Microelectronic engineering 109, 364-369, 2013
542013
Hourglass concept for RRAM: a dynamic and statistical device model
R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, YY Chen, ...
Proceedings of the 21th International Symposium on the Physical and Failure …, 2014
532014
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