Raghavan Nagarajan
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Resistive switching: from fundamentals of nanoionic redox processes to memristive device applications
D Ielmini, R Waser
John Wiley & Sons, 2015
Intrinsic switching variability in HfO2RRAM
A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ...
2013 5th IEEE International Memory Workshop, 30-33, 2013
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
A framework to practical predictive maintenance modeling for multi-state systems
CM Tan, N Raghavan
Reliability Engineering & System Safety 93 (8), 1138-1150, 2008
Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current
YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ...
2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013
Intrinsic nanofilamentation in resistive switching
X Wu, D Cha, M Bosman, N Raghavan, DB Migas, VE Borisenko, ...
Journal of Applied Physics 113 (11), 114503, 2013
Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability
N Raghavan, R Degraeve, A Fantini, L Goux, S Strangio, B Govoreanu, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 5E. 3.1-5E. 3.7, 2013
Causes and consequences of the stochastic aspect of filamentary RRAM
R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, B Govoreanu, ...
Microelectronic Engineering 147, 171-175, 2015
Stochastic variability of vacancy filament configuration in ultra-thin dielectric RRAM and its impact on OFF-state reliability
N Raghavan, R Degraeve, A Fantini, L Goux, DJ Wouters, ...
2013 IEEE International Electron Devices Meeting, 21.1. 1-21.1. 4, 2013
Study of preferential localized degradation and breakdown of HfO2/SiOx dielectric stacks at grain boundary sites of polycrystalline HfO2 dielectrics
K Shubhakar, KL Pey, N Raghavan, SS Kushvaha, M Bosman, Z Wang, ...
Microelectronic engineering 109, 364-369, 2013
Role of oxygen vacancies in -based gate stack breakdown
X Wu, DB Migas, X Li, M Bosman, N Raghavan, VE Borisenko, KL Pey
Applied Physics Letters 96 (17), 172901, 2010
Evidence for compliance controlled oxygen vacancy and metal filament based resistive switching mechanisms in RRAM
N Raghavan, KL Pey, W Liu, X Wu, X Li, M Bosman
Microelectronic Engineering 88 (7), 1124-1128, 2011
Fabrication of RRAM Cell Using CMOS Compatible Processes
W Liu, KL Pey, N Raghavan, CM Ng
US Patent App. 13/052,864, 2012
RTN insight to filamentary instability and disturb immunity in ultra-low power switching HfOx and AlOx RRAM
N Raghavan, R Degraeve, L Goux, A Fantini, DJ Wouters, ...
2013 Symposium on VLSI Technology, T164-T165, 2013
Resistive switching in NiSi gate metal-oxide-semiconductor transistors
X Li, WH Liu, N Raghavan, M Bosman, KL Pey
Applied Physics Letters 97 (20), 202904, 2010
Hourglass concept for RRAM: a dynamic and statistical device model
R Degraeve, A Fantini, N Raghavan, L Goux, S Clima, YY Chen, ...
Proceedings of the 21th International Symposium on the Physical and Failureá…, 2014
Grain boundary assisted degradation and breakdown study in cerium oxide gate dielectric using scanning tunneling microscopy
K Shubhakar, KL Pey, SS Kushvaha, SJ O’Shea, N Raghavan, M Bosman, ...
Applied Physics Letters 98 (7), 072902, 2011
High-κ dielectric breakdown in nanoscale logic devices–Scientific insight and technology impact
N Raghavan, KL Pey, K Shubhakar
Microelectronics Reliability 54 (5), 847-860, 2014
Understanding of the intrinsic characteristics and memory trade-offs of sub-μA filamentary RRAM operation
L Goux, A Fantini, R Degraeve, N Raghavan, R Nigon, S Strangio, G Kar, ...
2013 Symposium on VLSI Technology, T162-T163, 2013
Modified Percolation Model for Polycrystalline High-Gate Stack With Grain Boundary Defects
N Raghavan, KL Pey, K Shubhakar, M Bosman
IEEE electron device letters 32 (1), 78-80, 2010
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