| Classification and control of the origin of photoluminescence from Si nanocrystals S Godefroo, M Hayne, M Jivanescu, A Stesmans, M Zacharias, ... Nature nanotechnology 3 (3), 174-178, 2008 | 648 | 2008 |
| Photoluminescence of negatively charged excitons in high magnetic fields M Hayne, CL Jones, R Bogaerts, C Riva, A Usher, FM Peeters, F Herlach, ... Physical Review B 59 (4), 2927, 1999 | 113 | 1999 |
| Electron and hole confinement in stacked self-assembled InP quantum dots M Hayne, R Provoost, MK Zundel, YM Manz, K Eberl, VV Moshchalkov Physical Review B 62 (15), 10324, 2000 | 85 | 2000 |
| Raman scattering in cluster-deposited nanogranular silicon films MJ Konstantinović, S Bersier, X Wang, M Hayne, P Lievens, RE Silverans, ... Physical Review B 66 (16), 161311, 2002 | 82 | 2002 |
| Effective masses in high-mobility 2D electron gas structures PT Coleridge, M Hayne, P Zawadzki, AS Sachrajda Surface science 361, 560-563, 1996 | 78 | 1996 |
| Electron localization by self-assembled GaSb/GaAs quantum dots M Hayne, J Maes, S Bersier, VV Moshchalkov, A Schliwa, L Müller-Kirsch, ... Applied Physics Letters 82 (24), 4355-4357, 2003 | 72 | 2003 |
| Electron wave-function spillover in self-assembled quantum wires J Maes, M Hayne, Y Sidor, B Partoens, FM Peeters, Y González, ... Physical Review B—Condensed Matter and Materials Physics 70 (15), 155311, 2004 | 59 | 2004 |
| High-field magnetoexcitons in unstrained quantum dots Y Sidor, B Partoens, FM Peeters, N Schildermans, M Hayne, ... Physical Review B—Condensed Matter and Materials Physics 73 (15), 155334, 2006 | 56 | 2006 |
| The structural, electronic and optical properties of GaSb/GaAs nanostructures for charge-based memory M Hayne, RJ Young, EP Smakman, T Nowozin, P Hodgson, JK Garleff, ... Journal of Physics D: Applied Physics 46 (26), 264001, 2013 | 52 | 2013 |
| Heterodimensional charge-carrier confinement in stacked submonolayer InAs in GaAs S Harrison, MP Young, PD Hodgson, RJ Young, M Hayne, L Danos, ... Physical Review B 93 (8), 085302, 2016 | 50 | 2016 |
| Linking structural and electronic properties of high-purity self-assembled GaSb/GaAs quantum dots T Nowozin, A Marent, L Bonato, A Schliwa, D Bimberg, EP Smakman, ... Physical Review B—Condensed Matter and Materials Physics 86 (3), 035305, 2012 | 50 | 2012 |
| Optical observation of single-carrier charging in type-II quantum ring ensembles RJ Young, EP Smakman, AM Sánchez, P Hodgson, PM Koenraad, ... Applied Physics Letters 100 (8), 2012 | 50 | 2012 |
| Charge separation and temperature-induced carrier migration in GaInNAs multiple quantum wells T Nuytten, M Hayne, B Bansal, HY Liu, M Hopkinson, VV Moshchalkov Physical Review B—Condensed Matter and Materials Physics 84 (4), 045302, 2011 | 49 | 2011 |
| Magnetophotoluminescence of negatively charged excitons in narrow quantum wells T Vanhoucke, M Hayne, M Henini, VV Moshchalkov Physical Review B 63 (12), 125331, 2001 | 47 | 2001 |
| GaSb/GaAs quantum dot formation and demolition studied with cross-sectional scanning tunneling microscopy EP Smakman, JK Garleff, RJ Young, M Hayne, P Rambabu, PM Koenraad Applied Physics Letters 100 (14), 2012 | 46 | 2012 |
| Tuning the properties of exciton complexes in self-assembled GaSb/GaAs quantum rings M Ahmad Kamarudin, M Hayne, RJ Young, QD Zhuang, T Ben, SI Molina Physical Review B—Condensed Matter and Materials Physics 83 (11), 115311, 2011 | 43 | 2011 |
| Photoelectrolysis using type-II semiconductor heterojunctions S Harrison, M Hayne Scientific Reports 7 (1), 11638, 2017 | 36 | 2017 |
| Extended excitons and compact heliumlike biexcitons in type-II quantum dots B Bansal, S Godefroo, M Hayne, G Medeiros-Ribeiro, VV Moshchalkov Physical Review B—Condensed Matter and Materials Physics 80 (20), 205317, 2009 | 36 | 2009 |
| High‐field magneto‐photoluminescence of semiconductor nanostructures M Hayne, B Bansal Luminescence 27 (3), 179-196, 2012 | 34 | 2012 |
| GaSb quantum dot morphology for different growth temperatures and the dissolution effect of the GaAs capping layer MA Kamarudin, M Hayne, QD Zhuang, O Kolosov, T Nuytten, ... Journal of physics D: Applied physics 43 (6), 065402, 2010 | 34 | 2010 |
