| Charge injection and trapping in silicon nanocrystals MA Rafiq, Y Tsuchiya, H Mizuta, S Oda, S Uno, ZAK Durrani, WI Milne Applied Physics Letters 87 (18), 2005 | 95 | 2005 |
| Electronic state of vortices in investigated by complex surface impedance measurements Y Tsuchiya, K Iwaya, K Kinoshita, T Hanaguri, H Kitano, A Maeda, ... Physical Review B 63 (18), 184517, 2001 | 95 | 2001 |
| Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots Y Tsuchiya, K Takai, N Momo, T Nagami, H Mizuta, S Oda, S Yamaguchi, ... Journal of applied physics 100 (9), 2006 | 67 | 2006 |
| Hopping conduction in size-controlled Si nanocrystals MA Rafiq, Y Tsuchiya, H Mizuta, S Oda, S Uno, ZAK Durrani, WI Milne Journal of applied physics 100 (1), 2006 | 67 | 2006 |
| Effects of Columnar Defects on the Josephson Plasma Resonance in T Hanaguri, Y Tsuchiya, S Sakamoto, A Maeda, DG Steel Physical review letters 78 (16), 3177, 1997 | 55 | 1997 |
| Vapor–liquid–solid growth of small-and uniform-diameter silicon nanowires at low temperature from Si2H6 S Akhtar, K Usami, Y Tsuchiya, H Mizuta, S Oda Applied physics express 1 (1), 014003, 2008 | 33 | 2008 |
| Reduction of the Superfluid Density in the Vortex-Liquid Phase of T Hanaguri, T Tsuboi, Y Tsuchiya, K Sasaki, A Maeda Physical review letters 82 (6), 1273, 1999 | 33 | 1999 |
| Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications L Boodhoo, L Crudgington, HMH Chong, Y Tsuchiya, Z Moktadir, ... Microelectronic Engineering 145, 66-70, 2015 | 32 | 2015 |
| Influence of nanocrystal size on the transport properties of Si nanocrystals X Zhou, K Usami, MA Rafiq, Y Tsuchiya, H Mizuta, S Oda Journal of Applied Physics 104 (2), 2008 | 32 | 2008 |
| Random telegraph noise from resonant tunnelling at low temperatures Z Li, M Sotto, F Liu, MK Husain, H Yoshimoto, Y Sasago, D Hisamoto, ... Scientific reports 8 (1), 250, 2018 | 29 | 2018 |
| Three-dimensional numerical analysis of switching properties of high-speed and nonvolatile nanoelectromechanical memory T Nagami, H Mizuta, N Momo, Y Tsuchiya, S Saito, T Arai, T Shimada, ... IEEE transactions on electron devices 54 (5), 1132-1139, 2007 | 29 | 2007 |
| Effects of superconducting gap anisotropy on the flux flow resistivity in K Takaki, A Koizumi, T Hanaguri, M Nohara, H Takagi, K Kitazawa, Y Kato, ... Physical Review B 66 (18), 184511, 2002 | 27 | 2002 |
| High-density assembly of nanocrystalline silicon quantum dots A Tanaka, G Yamahata, Y Tsuchiya, K Usami, H Mizuta, S Oda Current Applied Physics 6 (3), 344-347, 2006 | 25 | 2006 |
| Formation mechanism of 100-nm-scale periodic structures in silicon using magnetic-field-assisted anodization D Hippo, Y Nakamine, K Urakawa, Y Tsuchiya, H Mizuta, N Koshida, ... Japanese journal of applied physics 47 (9R), 7398, 2008 | 24 | 2008 |
| Integration of tunnel-coupled double nanocrystalline silicon quantum dots with a multiple-gate single-electron transistor Y Kawata, MAH Khalafalla, K Usami, Y Tsuchiya, H Mizuta, S Oda Japanese Journal of Applied Physics 46 (7R), 4386, 2007 | 24 | 2007 |
| In-plane resonant nano-electro-mechanical sensors: a comprehensive study on design, fabrication and characterization challenges FA Hassani, Y Tsuchiya, H Mizuta Sensors 13 (7), 9364-9387, 2013 | 23 | 2013 |
| Silicon-on-insulator-based radio frequency single-electron transistors operating at temperatures above 4.2 K M Manoharan, Y Tsuchiya, S Oda, H Mizuta Nano letters 8 (12), 4648-4652, 2008 | 23 | 2008 |
| Local hole doping concentration modulation on graphene probed by tip-enhanced Raman spectroscopy T Iwasaki, T Zelai, S Ye, Y Tsuchiya, HMH Chong, H Mizuta Carbon 111, 67-73, 2017 | 21 | 2017 |
| Control of electrostatic coupling observed for silicon double quantum dot structures G Yamahata, Y Tsuchiya, S Oda, ZAK Durrani, H Mizuta Japanese journal of applied physics 47 (6R), 4820, 2008 | 21 | 2008 |
| Electron transport through silicon serial triple quantum dots G Yamahata, Y Tsuchiya, H Mizuta, K Uchida, S Oda Solid-State Electronics 53 (7), 779-785, 2009 | 20 | 2009 |
