Aditya Prabaswara
Aditya Prabaswara
Epitaxy development engineer, ams OSRAM international GmbH
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Droop-free, reliable, and high-power InGaN/GaN nanowire light-emitting diodes for monolithic metal-optoelectronics
C Zhao, TK Ng, RT ElAfandy, A Prabaswara, GB Consiglio, IA Ajia, ...
Nano letters 16 (7), 4616-4623, 2016
Facile formation of high-quality InGaN/GaN quantum-disks-in-nanowires on bulk-metal substrates for high-power light-emitters
C Zhao, TK Ng, N Wei, A Prabaswara, MS Alias, B Janjua, C Shen, ...
Nano letters 16 (2), 1056-1063, 2016
An enhanced surface passivation effect in InGaN/GaN disk-in-nanowire light emitting diodes for mitigating Shockley–Read–Hall recombination
C Zhao, TK Ng, A Prabaswara, M Conroy, S Jahangir, T Frost, J O'Connell, ...
Nanoscale 7 (40), 16658-16665, 2015
GNU Radio based software-defined FMCW radar for weather surveillance application
A Prabaswara, A Munir, AB Suksmono
2011 6th International Conference on Telecommunication Systems, Services …, 2011
Photoinduced entropy of InGaN/GaN pin double-heterostructure nanowires
N Alfaraj, S Mitra, F Wu, IA Ajia, B Janjua, A Prabaswara, RA Aljefri, H Sun, ...
Applied Physics Letters 110 (16), 2017
Review of GaN thin film and nanorod growth using magnetron sputter epitaxy
A Prabaswara, J Birch, M Junaid, EA Serban, L Hultman, CL Hsiao
Applied Sciences 10 (9), 3050, 2020
InGaN/GaN nanowires epitaxy on large-area MoS 2 for high-performance light-emitters
C Zhao, TK Ng, CC Tseng, J Li, Y Shi, N Wei, D Zhang, GB Consiglio, ...
RSC advances 7 (43), 26665-26672, 2017
Unleashing the potential of molecular beam epitaxy grown AlGaN-based ultraviolet-spectrum nanowires devices
JW Min, D Priante, M Tangi, G Liu, CH Kang, A Prabaswara, C Zhao, ...
Journal of Nanophotonics 12 (4), 043511-043511, 2018
True yellow light-emitting diodes as phosphor for tunable color-rendering index laser-based white light
B Janjua, TK Ng, C Zhao, A Prabaswara, GB Consiglio, D Priante, C Shen, ...
Acs Photonics 3 (11), 2089-2095, 2016
Highly uniform ultraviolet-A quantum-confined AlGaN nanowire LEDs on metal/silicon with a TaN interlayer
D Priante, B Janjua, A Prabaswara, RC Subedi, RT Elafandy, S Lopatin, ...
Optical Materials Express 7 (12), 4214-4224, 2017
Role of quantum-confined stark effect on bias dependent photoluminescence of N-polar GaN/InGaN multi-quantum disk amber light emitting diodes
M Tangi, P Mishra, B Janjua, A Prabaswara, C Zhao, D Priante, JW Min, ...
Journal of Applied Physics 123 (10), 2018
Observation of piezotronic and piezo-phototronic effects in n-InGaN nanowires/Ti grown by molecular beam epitaxy
M Tangi, JW Min, D Priante, RC Subedi, DH Anjum, A Prabaswara, ...
Nano Energy 54, 264-271, 2018
Direct growth of III-nitride nanowire-based yellow light-emitting diode on amorphous quartz using thin Ti interlayer
A Prabaswara, JW Min, C Zhao, B Janjua, D Zhang, AM Albadri, ...
Nanoscale research letters 13, 1-9, 2018
Bandgap measurements and the peculiar splitting of E2H phonon modes of InxAl1-xN nanowires grown by plasma assisted molecular beam epitaxy
M Tangi, P Mishra, B Janjua, TK Ng, DH Anjum, A Prabaswara, Y Yang, ...
Journal of Applied Physics 120 (4), 2016
Titanium carbide MXene nucleation layer for epitaxial growth of high-quality GaN nanowires on amorphous substrates
A Prabaswara, H Kim, JW Min, RC Subedi, DH Anjum, B Davaasuren, ...
ACS nano 14 (2), 2202-2211, 2020
On the optical and microstrain analysis of graded InGaN/GaN MQWs based on plasma assisted molecular beam epitaxy
P Mishra, B Janjua, TK Ng, DH Anjum, RT Elafandy, A Prabaswara, ...
Optical Materials Express 6 (6), 2052-2062, 2016
Diode junction temperature in ultraviolet AlGaN quantum-disks-in-nanowires
D Priante, RT Elafandy, A Prabaswara, B Janjua, C Zhao, MS Alias, ...
Journal of Applied Physics 124 (1), 2018
Ultrabroad linewidth orange-emitting nanowires LED for high CRI laser-based white lighting and gigahertz communications
B Janjua, TK Ng, C Zhao, HM Oubei, C Shen, A Prabaswara, MS Alias, ...
Optics express 24 (17), 19228-19236, 2016
Ultraviolet-A LED based on quantum-disks-in-AlGaN-nanowires—optimization and device reliability
B Janjua, D Priante, A Prabaswara, L Alanazi, C Zhao, AA Alhamoud, ...
2018 IEEE Photonics Conference (IPC), 1-12, 2018
Direct growth of single crystalline GaN nanowires on indium tin oxide-coated silica
A Prabaswara, JW Min, RC Subedi, M Tangi, JA Holguin-Lerma, C Zhao, ...
Nanoscale Research Letters 14, 1-7, 2019
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