Emanuele Uccelli
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Raman spectroscopy of wurtzite and zinc-blende GaAs nanowires: polarization dependence, selection rules, and strain effects
I Zardo, S Conesa-Boj, F Peiro, JR Morante, J Arbiol, E Uccelli, ...
Physical Review B—Condensed Matter and Materials Physics 80 (24), 245324, 2009
Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
M Heiss, S Conesa-Boj, J Ren, HH Tseng, A Gali, A Rudolph, E Uccelli, ...
Physical Review B—Condensed Matter and Materials Physics 83 (4), 045303, 2011
Three-dimensional multiple-order twinning of self-catalyzed GaAs nanowires on Si substrates
E Uccelli, J Arbiol, C Magen, P Krogstrup, E Russo-Averchi, M Heiss, ...
Nano letters 11 (9), 3827-3832, 2011
Untangling the electronic band structure of wurtzite GaAs nanowires by resonant Raman spectroscopy
B Ketterer, M Heiss, E Uccelli, J Arbiol, A Fontcuberta i Morral
ACS nano 5 (9), 7585-7592, 2011
P-doping mechanisms in catalyst-free gallium arsenide nanowires
J Dufouleur, C Colombo, T Garma, B Ketterer, E Uccelli, M Nicotra, ...
Nano letters 10 (5), 1734-1740, 2010
Thermal conductivity of GaAs nanowires studied by micro-Raman spectroscopy combined with laser heating
M Soini, I Zardo, E Uccelli, S Funk, G Koblmüller, A Fontcuberta i Morral, ...
Applied Physics Letters 97 (26), 2010
InAs quantum dot arrays decorating the facets of GaAs nanowires
E Uccelli, J Arbiol, JR Morante, A Fontcuberta i Morral
ACS nano 4 (10), 5985-5993, 2010
Selectivity map for molecular beam epitaxy of advanced III–V quantum nanowire networks
P Aseev, A Fursina, F Boekhout, F Krizek, JE Sestoft, F Borsoi, S Heedt, ...
Nano letters 19 (1), 218-227, 2018
Field effect enhancement in buffered quantum nanowire networks
F Krizek, JE Sestoft, P Aseev, S Marti-Sanchez, S Vaitiekėnas, L Casparis, ...
Physical review materials 2 (9), 093401, 2018
Confined epitaxial lateral overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates
L Czornomaz, E Uccelli, M Sousa, V Deshpande, V Djara, D Caimi, ...
2015 Symposium on VLSI Technology (VLSI Technology), T172-T173, 2015
Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon
E Russo-Averchi, M Heiss, L Michelet, P Krogstrup, J Nygard, C Magen, ...
Nanoscale 4 (5), 1486-1490, 2012
Towards large size substrates for III-V co-integration made by direct wafer bonding on Si
N Daix, E Uccelli, L Czornomaz, D Caimi, C Rossel, M Sousa, H Siegwart, ...
APL materials 2 (8), 2014
Mobility and carrier density in p-type GaAs nanowires measured by transmission Raman spectroscopy
B Ketterer, E Uccelli, AF i Morral
Nanoscale 4 (5), 1789-1793, 2012
Exciton localization mechanisms in wurtzite/zinc-blende GaAs nanowires
AM Graham, P Corfdir, M Heiss, S Conesa-Boj, E Uccelli, AF i Morral, ...
Physical Review B 87 (12), 125304, 2013
Compensation mechanism in silicon-doped gallium arsenide nanowires
B Ketterer, E Mikheev, E Uccelli, A Fontcuberta i Morral
Applied physics letters 97 (22), 2010
An integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recycling
L Czornomaz, N Daix, D Caimi, M Sousa, R Erni, MD Rossell, M El-Kazzi, ...
2012 International Electron Devices Meeting, 23.4. 1-23.4. 4, 2012
In (Ga) As quantum dot formation on group-III assisted catalyst-free InGaAs nanowires
M Heiss, B Ketterer, E Uccelli, JR Morante, J Arbiol, AF i Morral
Nanotechnology 22 (19), 195601, 2011
Analysis of the Pockels effect in ferroelectric barium titanate thin films on Si (0 0 1)
KJ Kormondy, S Abel, F Fallegger, Y Popoff, P Ponath, AB Posadas, ...
Microelectronic Engineering 147, 215-218, 2015
Pressure tuning of the optical properties of GaAs nanowires
I Zardo, S Yazji, C Marini, E Uccelli, A Fontcuberta i Morral, G Abstreiter, ...
ACS nano 6 (4), 3284-3291, 2012
Vertical InAs-Si gate-all-around tunnel FETs integrated on Si using selective epitaxy in nanotube templates
D Cutaia, KE Moselund, M Borg, H Schmid, L Gignac, CM Breslin, S Karg, ...
IEEE Journal of the Electron Devices Society 3 (3), 176-183, 2015
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