Properties of Zn‐doped VPE‐grown GaN. I. Luminescence data in relation to doping conditions B Monemar, O Lagerstedt, HP Gislason Journal of Applied Physics 51 (1), 625-639, 1980 | 210 | 1980 |
Vacancy defects as compensating centers in Mg-doped GaN S Hautakangas, J Oila, M Alatalo, K Saarinen, L Liszkay, D Seghier, ... Physical review letters 90 (13), 137402, 2003 | 155 | 2003 |
Vacancy defect-induced d0 ferromagnetism in undoped ZnO nanostructures: Controversial origin and challenges B Qi, S Ólafsson, HP Gíslason Progress in Materials Science 90, 45-74, 2017 | 87 | 2017 |
Frequency-dependent conductivity in lithium-diffused and annealed GaAs JT Gudmundsson, HG Svavarsson, S Gudjonsson, HP Gislason Physica B: Condensed Matter 340, 324-328, 2003 | 83 | 2003 |
Shifting photoluminescence bands in high-resistivity Li-compensated GaAs HP Gislason, BH Yang, M Linnarsson Physical Review B 47 (15), 9418, 1993 | 76 | 1993 |
Photoluminescence studies of the 1.911-eV Cu-related complex in GaP HP Gislason, B Monemar, PJ Dean, DC Herbert, S Depinna, BC Cavenett, ... Physical Review B 26 (2), 827, 1982 | 74 | 1982 |
Optical properties of the Cu-related characteristic-orange-luminescence center in GaP B Monemar, HP Gislason, PJ Dean, DC Herbert Physical Review B 25 (12), 7719, 1982 | 64 | 1982 |
Properties of Zn‐doped VPE‐grown GaN. II. Optical cross sections B Monemar, HP Gislason, O Lagerstedt Journal of Applied Physics 51 (1), 640-649, 1980 | 56 | 1980 |
Optical detection of magnetic resonance of the zinc vacancy in ZnSe via magnetic circular dichroism DY Jeon, HP Gislason, GD Watkins Physical Review B 48 (11), 7872, 1993 | 54 | 1993 |
Acceptor associates and bound excitons in GaAs: Cu ZG Wang, HP Gislason, B Monemar Journal of applied physics 58 (1), 230-239, 1985 | 54 | 1985 |
Paramagnetism in Mn/Fe implanted ZnO HP Gunnlaugsson, TE Mølholt, R Mantovan, H Masenda, D Naidoo, ... Applied Physics Letters 97 (14), 2010 | 46 | 2010 |
Determination of the antisite structure in InP by optically detected electron-nuclear double resonance DY Jeon, HP Gislason, JF Donegan, GD Watkins Physical Review B 36 (2), 1324, 1987 | 45 | 1987 |
Electrical characterization of Mg-related energy levels and the compensation mechanism in GaN: Mg D Seghier, HP Gislason Journal of Applied Physics 88 (11), 6483-6487, 2000 | 40 | 2000 |
Neutral (Cu-Li) complexes in GaP: The (Cu-Li bound exciton at 2.306 eV HP Gislason, B Monemar, ME Pistol, PJ Dean, DC Herbert, A Kana, ... Physical Review B 31 (6), 3774, 1985 | 35 | 1985 |
Shallow and deep donors in n-type ZnO characterized by admittance spectroscopy D Seghier, HP Gislason Journal of Materials Science: Materials in Electronics 19, 687-691, 2008 | 32 | 2008 |
Properties of GaN tunneling MIS light‐emitting diodes O Lagerstedt, B Monemar, H Gislason Journal of Applied Physics 49 (5), 2953-2957, 1978 | 29 | 1978 |
Neutral (Cu-Li) complexes in GaP: The (Cu-Li bound exciton at 2.242 eV HP Gislason, B Monemar, ME Pistol, PJ Dean, DC Herbert, S Depinna, ... Physical Review B 32 (6), 3958, 1985 | 24 | 1985 |
Spin–lattice relaxations of paramagnetic Fe3+ in ZnO TE Mølholt, HP Gunnlaugsson, K Johnston, R Mantovan, H Masenda, ... Physica Scripta 2012 (T148), 014006, 2012 | 23 | 2012 |
Lattice locations and properties of Fe in Co/Fe co-implanted ZnO HP Gunnlaugsson, K Johnston, TE Mølholt, G Weyer, R Mantovan, ... Applied Physics Letters 100 (4), 2012 | 23 | 2012 |
Observation of spin-lattice relaxations of dilute Fe3+ in MgO by Mössbauer spectroscopy TE Mølholt, R Mantovan, HP Gunnlaugsson, D Naidoo, S Ólafsson, ... Hyperfine Interactions 197, 89-94, 2010 | 23 | 2010 |