| Interfacial chemistry and valence band offset between GaN and Al2O3 studied by X-ray photoelectron spectroscopy TL Duan, JS Pan, DS Ang Applied Physics Letters 102 (20), 2013 | 84 | 2013 |
| Reassessing the mechanisms of negative-bias temperature instability by repetitive stress/relaxation experiments DS Ang, ZQ Teo, TJJ Ho, CM Ng IEEE Transactions on Device and Materials Reliability 11 (1), 19-34, 2010 | 84 | 2010 |
| A consistent deep-level hole trapping model for negative bias temperature instability DS Ang, S Wang, GA Du, YZ Hu IEEE Transactions on Device and Materials Reliability 8 (1), 22-34, 2008 | 68 | 2008 |
| Electrical tuning of the SERS enhancement by precise defect density control C Zhou, L Sun, F Zhang, C Gu, S Zeng, T Jiang, X Shen, DS Ang, J Zhou ACS applied materials & interfaces 11 (37), 34091-34099, 2019 | 56 | 2019 |
| Ultrafast measurement on NBTI GA Du, DS Ang, ZQ Teo, YZ Hu IEEE electron device letters 30 (3), 275-277, 2009 | 56 | 2009 |
| A unified model for the self-limiting hot-carrier degradation in LDD n-MOSFETs DS Ang, CH Ling IEEE Transactions on Electron Devices 45 (1), 149-159, 1998 | 56 | 1998 |
| Recent progress in synaptic devices paving the way toward an artificial cogni‐retina for bionic and machine vision D Berco, D Shenp Ang Advanced Intelligent Systems 1 (1), 1900003, 2019 | 52 | 2019 |
| A study of hot carrier degradation in NMOSEET's by gate capacitance and charge pumping current CH Ling, SE Tan, DS Ang IEEE transactions on electron devices 42 (7), 1321-1328, 1995 | 51 | 1995 |
| Recovery of the NBTI-stressed ultrathin gate p-MOSFET: The role of deep-level hole traps DS Ang, S Wang IEEE electron device letters 27 (11), 914-916, 2006 | 47 | 2006 |
| Evidence of two distinct degradation mechanisms from temperature dependence of negative bias stressing of the ultrathin gate p-MOSFET DS Ang, S Wang, CH Ling IEEE electron device letters 26 (12), 906-908, 2005 | 47 | 2005 |
| Can the reaction-diffusion model explain generation and recovery of interface states contributing to NBTI? ZQ Teo, DS Ang, KS See 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 44 | 2009 |
| Mechanism of high-k dielectric-induced breakdown of the interfacial SiO2 layer G Bersuker, D Heh, CD Young, L Morassi, A Padovani, L Larcher, KS Yew, ... 2010 IEEE International Reliability Physics Symposium, 373-378, 2010 | 42 | 2010 |
| Bilayer gate dielectric study by scanning tunneling microscopy YC Ong, DS Ang, KL Pey, SJ O’Shea, KEJ Goh, C Troadec, CH Tung, ... Applied Physics Letters 91 (10), 2007 | 41 | 2007 |
| White-light-induced disruption of nanoscale conducting filament in hafnia Y Zhou, KS Yew, DS Ang, T Kawashima, MK Bera, HZ Zhang, G Bersuker Applied Physics Letters 107 (7), 2015 | 39 | 2015 |
| Breakdowns in high-k gate stacks of nano-scale CMOS devices KL Pey, R Ranjan, CH Tung, LJ Tang, VL Lo, KS Lim, DS Ang Microelectronic Engineering 80, 353-361, 2005 | 36 | 2005 |
| Investigation of surface band bending of Ga-face GaN by angle-resolved X-ray photoelectron spectroscopy TL Duan, JS Pan, DS Ang ECS Journal of Solid State Science and Technology 5 (9), P514, 2016 | 34 | 2016 |
| Evidence for two distinct positive trapped charge components in NBTI stressed p-MOSFETs employing ultrathin CVD silicon nitride gate dielectric DS Ang, KL Pey IEEE electron device letters 25 (9), 637-639, 2004 | 34 | 2004 |
| “Non-hydrogen-transport” characteristics of dynamic negative-bias temperature instability ZQ Teo, DS Ang, CM Ng IEEE electron device letters 31 (4), 269-271, 2010 | 32 | 2010 |
| A novel subthreshold slope technique for the extraction of the buried-oxide interface trap density in the fully depleted SOI MOSFET Z Lun, DS Ang, CH Ling IEEE Electron Device Letters 21 (8), 411-413, 2000 | 31 | 2000 |
| Highly Transparent ITO/HfO2/ITO Device for Visible-Light Sensing PS Kalaga, D Kumar, DS Ang, Z Tsakadze IEEE Access 8, 91648-91652, 2020 | 29 | 2020 |
