| Entrance channel effects in the fusion-fission time scales from studies of prescission neutron multiplicities A Saxena, A Chatterjee, RK Choudhury, SS Kapoor, DM Nadkarni Physical Review C 49 (2), 932, 1994 | 158 | 1994 |
| The conduction band structure and deep levels in Ga1-xAlxAs alloys from a high-pressure experiment AK Saxena Journal of Physics C: Solid State Physics 13 (23), 4323, 1980 | 125 | 1980 |
| Photoconductivity storage in Ga1− xAlxAs alloys at low temperatures AK Saxena Solid-State Electronics 25 (2), 127-131, 1982 | 103 | 1982 |
| Non‐Γ Deep Levels and the Conduction Band Structure of Ga1− xAlxAs Alloys AK Saxena physica status solidi (b) 105 (2), 777-787, 1981 | 96 | 1981 |
| Electron mobility in alloys AK Saxena Physical Review B 24 (6), 3295, 1981 | 86 | 1981 |
| Nanoscale FinFET based SRAM cell design: Analysis of performance metric, process variation, underlapped FinFET, and temperature effect B Raj, AK Saxena, S Dasgupta IEEE Circuits and Systems Magazine 11 (3), 38-50, 2011 | 74 | 2011 |
| Deep levels in Ga1−xAlxAs under pressure AK Saxena Applied Physics Letters 36 (1), 79-81, 1980 | 58 | 1980 |
| Determination of alloy scattering potential in Ga1−xAlxAs alloys AK Saxena, AR Adams Journal of applied physics 58 (7), 2640-2645, 1985 | 56 | 1985 |
| Structural phase transitions of the Si (100) surface A Saxena, ET Gawlinski, JD Gunton Surface science 160 (2), 618-640, 1985 | 53 | 1985 |
| Design and analysis of analog performance of dual-k spacer underlap N/P-FinFET at 12 nm gate length A Nandi, AK Saxena, S Dasgupta IEEE Transactions on Electron Devices 60 (5), 1529-1535, 2013 | 50 | 2013 |
| Analytical modeling of a double gate MOSFET considering source/drain lateral Gaussian doping profile A Nandi, AK Saxena, S Dasgupta IEEE Transactions on Electron Devices 60 (11), 3705-3709, 2013 | 44 | 2013 |
| Scattering parameters from an analysis of the hall electron mobility in Ga1− xAlxAs alloys AK Saxena, KS Gurumurthy Journal of Physics and Chemistry of Solids 43 (9), 801-808, 1982 | 34 | 1982 |
| Multipolaron solutions of the Gross-Neveu field theory: Toda potential and doped polymers A Saxena, AR Bishop Physical Review A 44 (4), R2251, 1991 | 32 | 1991 |
| Stabilization of half-skyrmions: Heisenberg spins on a non-simply connected manifold A Saxena, R Dandoloff Physical Review B 66 (10), 104414, 2002 | 28 | 2002 |
| Intervalley scattering in Ga1−xAlxAs alloys AK Saxena Journal of Applied Physics 52 (9), 5643-5646, 1981 | 27 | 1981 |
| Analytical modeling for the estimation of leakage current and subthreshold swing factor of nanoscale double gate FinFET device B Raj, AK Saxena, S Dasgupta Microelectronics International 26 (1), 53-63, 2009 | 24 | 2009 |
| Impact of dual-k spacer on analog performance of underlap FinFET A Nandi, AK Saxena, S Dasgupta Microelectronics Journal 43 (11), 883-887, 2012 | 22 | 2012 |
| Effects of prefission neutron emission on the fission fragment angular distributions in heavy-ion-induced fission A Saxena, S Kailas, A Karnik, SS Kapoor Physical Review C 47 (1), 403, 1993 | 22 | 1993 |
| Non‐shallow levels and the conduction band structure of Ga1−xAlxAs AK Saxena physica status solidi (b) 96 (2), K77-K82, 1979 | 22 | 1979 |
| Enhancing low temperature analog performance of underlap FinFET at scaled gate lengths A Nandi, AK Saxena, S Dasgupta IEEE Transactions on Electron Devices 61 (11), 3619-3624, 2014 | 21 | 2014 |
