Saxena A K
Saxena A K
NBA Accd Visiting Chairman(ex-professor of electronics and communication engg university of roorkee
Verified email at iitr.ac.in
TitleCited byYear
Entrance channel effects in the fusion-fission time scales from studies of prescission neutron multiplicities
A Saxena, A Chatterjee, RK Choudhury, SS Kapoor, DM Nadkarni
Physical Review C 49 (2), 932, 1994
1581994
The conduction band structure and deep levels in Ga1-xAlxAs alloys from a high-pressure experiment
AK Saxena
Journal of Physics C: Solid State Physics 13 (23), 4323, 1980
1251980
Photoconductivity storage in Ga1− xAlxAs alloys at low temperatures
AK Saxena
Solid-State Electronics 25 (2), 127-131, 1982
1031982
Non‐Γ Deep Levels and the Conduction Band Structure of Ga1− xAlxAs Alloys
AK Saxena
physica status solidi (b) 105 (2), 777-787, 1981
961981
Electron mobility in alloys
AK Saxena
Physical Review B 24 (6), 3295, 1981
861981
Nanoscale FinFET based SRAM cell design: Analysis of performance metric, process variation, underlapped FinFET, and temperature effect
B Raj, AK Saxena, S Dasgupta
IEEE Circuits and Systems Magazine 11 (3), 38-50, 2011
742011
Deep levels in Ga1−xAlxAs under pressure
AK Saxena
Applied Physics Letters 36 (1), 79-81, 1980
581980
Determination of alloy scattering potential in Ga1−xAlxAs alloys
AK Saxena, AR Adams
Journal of applied physics 58 (7), 2640-2645, 1985
561985
Structural phase transitions of the Si (100) surface
A Saxena, ET Gawlinski, JD Gunton
Surface science 160 (2), 618-640, 1985
531985
Design and analysis of analog performance of dual-k spacer underlap N/P-FinFET at 12 nm gate length
A Nandi, AK Saxena, S Dasgupta
IEEE Transactions on Electron Devices 60 (5), 1529-1535, 2013
502013
Analytical modeling of a double gate MOSFET considering source/drain lateral Gaussian doping profile
A Nandi, AK Saxena, S Dasgupta
IEEE Transactions on Electron Devices 60 (11), 3705-3709, 2013
442013
Scattering parameters from an analysis of the hall electron mobility in Ga1− xAlxAs alloys
AK Saxena, KS Gurumurthy
Journal of Physics and Chemistry of Solids 43 (9), 801-808, 1982
341982
Multipolaron solutions of the Gross-Neveu field theory: Toda potential and doped polymers
A Saxena, AR Bishop
Physical Review A 44 (4), R2251, 1991
321991
Stabilization of half-skyrmions: Heisenberg spins on a non-simply connected manifold
A Saxena, R Dandoloff
Physical Review B 66 (10), 104414, 2002
282002
Intervalley scattering in Ga1−xAlxAs alloys
AK Saxena
Journal of Applied Physics 52 (9), 5643-5646, 1981
271981
Analytical modeling for the estimation of leakage current and subthreshold swing factor of nanoscale double gate FinFET device
B Raj, AK Saxena, S Dasgupta
Microelectronics International 26 (1), 53-63, 2009
242009
Impact of dual-k spacer on analog performance of underlap FinFET
A Nandi, AK Saxena, S Dasgupta
Microelectronics Journal 43 (11), 883-887, 2012
222012
Effects of prefission neutron emission on the fission fragment angular distributions in heavy-ion-induced fission
A Saxena, S Kailas, A Karnik, SS Kapoor
Physical Review C 47 (1), 403, 1993
221993
Non‐shallow levels and the conduction band structure of Ga1−xAlxAs
AK Saxena
physica status solidi (b) 96 (2), K77-K82, 1979
221979
Enhancing low temperature analog performance of underlap FinFET at scaled gate lengths
A Nandi, AK Saxena, S Dasgupta
IEEE Transactions on Electron Devices 61 (11), 3619-3624, 2014
212014
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