| Scaling of GaN HEMTs and Schottky diodes for submillimeter-wave MMIC applications K Shinohara, DC Regan, Y Tang, AL Corrion, DF Brown, JC Wong, ... IEEE Transactions on Electron Devices 60 (10), 2982-2996, 2013 | 504 | 2013 |
| Pseudomorphic In0. 52 Al0. 48 As/In0. 7 Ga0. 3 As HEMT’s with an ultrahigh f of 562 GHz Y Yamashita, A Endoh, K Shinohara, K Hikosaka, T Matsui, S Hiyamizu, ... IEEE Electron Device Lett 23 (10), 573-575, 2002 | 405 | 2002 |
| Ultrahigh-Speed GaN High-Electron-Mobility Transistors Withof 454/444 GHz Y Tang, K Shinohara, D Regan, A Corrion, D Brown, J Wong, A Schmitz, ... IEEE Electron Device Letters 36 (6), 549-551, 2015 | 329 | 2015 |
| 92–96 GHz GaN power amplifiers M Micovic, A Kurdoghlian, A Margomenos, DF Brown, K Shinohara, ... 2012 IEEE/MTT-S International Microwave Symposium Digest, 1-3, 2012 | 157 | 2012 |
| 547-GHz fT In0. 7Ga0. 3As-In0. 52Al0. 48As HEMTs with reduced source and drain resistance K Shinohara, Y Yamashita, A Endoh, I Watanabe, K Hikosaka, T Matsui, ... IEEE Electron Device Letters 25 (5), 241-243, 2004 | 155* | 2004 |
| 220GHz fTand 400GHz fmaxin 40-nm GaN DH-HEMTs with re-grown ohmic K Shinohara, A Corrion, D Regan, I Milosavljevic, D Brown, S Burnham, ... 2010 International Electron Devices Meeting, 30.1. 1-30.1. 4, 2010 | 153 | 2010 |
| Deeply-scaled self-aligned-gate GaN DH-HEMTs with ultrahigh cutoff frequency K Shinohara, D Regan, A Corrion, D Brown, S Burnham, PJ Willadsen, ... 2011 International Electron Devices Meeting, 19.1. 1-19.1. 4, 2011 | 138 | 2011 |
| Ultra-short 25-nm-gate lattice-matched InAlAs/InGaAs HEMTs within the range of 400 GHz cutoff frequency Y Yamashita, A Endoh, K Shinohara, M Higashiwaki, K Hikosaka, ... IEEE Electron Device Letters 22 (8), 367-369, 2001 | 131 | 2001 |
| Self-aligned-gate GaN-HEMTs with heavily-doped n+-GaN ohmic contacts to 2DEG K Shinohara, D Regan, A Corrion, D Brown, Y Tang, J Wong, G Candia, ... 2012 International Electron Devices Meeting, 27.2. 1-27.2. 4, 2012 | 128 | 2012 |
| Ultrahigh-speed pseudomorphic InGaAs/InAlAs HEMTs with 400-GHz cutoff frequency K Shinohara, Y Yamashita, A Endoh, K Hikosaka, T Matsui, T Mimura, ... IEEE Electron Device Letters 22 (11), 507-509, 2001 | 116 | 2001 |
| GaN technology for E, W and G-band applications A Margomenos, A Kurdoghlian, M Micovic, K Shinohara, DF Brown, ... 2014 IEEE compound semiconductor integrated circuit symposium (CSICS), 1-4, 2014 | 114 | 2014 |
| W-band power performance of AlGaN/GaN DHFETs with regrown n+ GaN ohmic contacts by MBE DF Brown, A Williams, K Shinohara, A Kurdoghlian, I Milosavljevic, ... 2011 international electron devices meeting, 19.3. 1-19.3. 4, 2011 | 106 | 2011 |
| W-band GaN MMIC with 842 mW output power at 88 GHz M Micovic, A Kurdoghlian, K Shinohara, S Burnham, I Milosavljevic, M Hu, ... 2010 IEEE MTT-S International Microwave Symposium, 237-239, 2010 | 103 | 2010 |
| Electron Velocity Enhancement in Laterally Scaled GaN DH-HEMTs With of 260 GHz K Shinohara, D Regan, I Milosavljevic, AL Corrion, DF Brown, ... IEEE Electron Device Letters 32 (8), 1074-1076, 2011 | 102 | 2011 |
| Extremely high-speed lattice-matched InGaAs/InAlAs high electron mobility transistors with 472 GHz cutoff frequency K Shinohara, Y Yamashita, A Endoh, K Hikosaka, T Matsui, T Mimura, ... Japanese journal of applied physics 41 (4B), L437, 2002 | 90 | 2002 |
| Enhancement-Mode AlN/GaN/AlGaN DHFET With 700-mS/mmand 112-GHz AL Corrion, K Shinohara, D Regan, I Milosavljevic, P Hashimoto, ... IEEE electron device letters 31 (10), 1116-1118, 2010 | 75 | 2010 |
| Normally-off 5A/1100V GaN-on-silicon device for high voltage applications KS Boutros, S Burnham, D Wong, K Shinohara, B Hughes, D Zehnder, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-3, 2009 | 65 | 2009 |
| InP-based high electron mobility transistors with a very short gate-channel distance A Endoh, Y Yamashita, K Shinohara, K Hikosaka, T Matsui, S Hiyamizu, ... Japanese journal of applied physics 42 (4S), 2214, 2003 | 63 | 2003 |
| Wellbore heat loss in production and injection wells RN Horne, K Shinohara Journal of Petroleum Technology 31 (01), 116-118, 1979 | 60 | 1979 |
| Structure and excited-state dynamics of anthracene: Ultrahigh-resolution spectroscopy and theoretical calculation M Baba, M Saitoh, K Taguma, K Shinohara, K Yoshida, Y Semba, ... The Journal of chemical physics 130 (13), 2009 | 51 | 2009 |
