JH Edgar
TitleCited byYear
Substrates for gallium nitride epitaxy
L Liu, JH Edgar
Materials Science and Engineering: R: Reports 37 (3), 61-127, 2002
Wet etching of GaN, AlN, and SiC: a review
D Zhuang, JH Edgar
Materials Science and Engineering: R: Reports 48 (1), 1-46, 2005
Properties of group III nitrides
JH Edgar
Institution of Electrical Engineers, 1994
Prospects for device implementation of wide band gap semiconductors
JH Edgar
Journal of materials research 7 (1), 235-252, 1992
Controlled growth of 3C‐SiC and 6H‐SiC films on low‐tilt‐angle vicinal (0001) 6H‐SiC wafers
JA Powell, JB Petit, JH Edgar, IG Jenkins, LG Matus, JW Yang, P Pirouz, ...
Applied physics letters 59 (3), 333-335, 1991
related Semiconductors
JH Edgar, S Strite, I Akasaki, H Amano, CWG Nitride
INSEPC, 1999
Raman scattering studies on single-crystalline bulk AlN under high pressures
M Kuball, JM Hayes, AD Prins, NWA Van Uden, DJ Dunstan, Y Shi, ...
Applied Physics Letters 78 (6), 724-726, 2001
Bulk AlN crystal growth: self-seeding and seeding on 6H-SiC substrates
JH Edgar, L Liu, B Liu, D Zhuang, J Chaudhuri, M Kuball, S Rajasingam
Journal of crystal growth 246 (3-4), 187-193, 2002
Infrared hyperbolic metasurface based on nanostructured van der Waals materials
P Li, I Dolado, FJ Alfaro-Mozaz, F Casanova, LE Hueso, S Liu, JH Edgar, ...
Science 359 (6378), 892-896, 2018
Ultralow-loss polaritons in isotopically pure boron nitride
AJ Giles, S Dai, I Vurgaftman, T Hoffman, S Liu, L Lindsay, CT Ellis, ...
Nature materials 17 (2), 134, 2018
Phonon lifetimes in bulk AlN and their temperature dependence
M Kuball, JM Hayes, Y Shi, JH Edgar
Applied Physics Letters 77 (13), 1958-1960, 2000
Self-assembled monolayers of alkylphosphonic acid on GaN substrates
T Ito, SM Forman, C Cao, F Li, CR Eddy Jr, MA Mastro, RT Holm, ...
Langmuir 24 (13), 6630-6635, 2008
Defect-selective etching of bulk AlN single crystals in molten KOH/NaOH eutectic alloy
D Zhuang, JH Edgar, B Strojek, J Chaudhuri, Z Rek
Journal of crystal growth 262 (1-4), 89-94, 2004
Gaseous etching of 6H–SiC at relatively low temperatures
ZY Xie, CH Wei, LY Li, QM Yu, JH Edgar
Journal of crystal growth 217 (1-2), 115-124, 2000
Application of oxidation to the structural characterization of SiC epitaxial films
JA Powell, JB Petit, JH Edgar, IG Jenkins, LG Matus, WJ Choyke, ...
Applied physics letters 59 (2), 183-185, 1991
Gallium nitride and related semiconductors
JH Edgar, S Strite, I Akasaki, H Amano, C Wetzel
INSPEC, Stevenage, 1999
Transport effects in the sublimation growth of aluminum nitride
L Liu, JH Edgar
Journal of crystal growth 220 (3), 243-253, 2000
Wet chemical etching of AlN single crystals
D Zhuang, JH Edgar, L Liu, B Liu, L Walker
Materials Research Society Internet Journal of Nitride Semiconductor Research 7, 2002
Fourier transform infrared spectroscopic study of predeposition reactions in metalloorganic chemical vapor deposition of gallium nitride
BS Sywe, JR Schlup, JH Edgar
Chemistry of Materials 3 (4), 737-742, 1991
Two-dimensional excitons in three-dimensional hexagonal boron nitride
XK Cao, B Clubine, JH Edgar, JY Lin, HX Jiang
Applied Physics Letters 103 (19), 191106, 2013
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