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Sungjoo Lee
Sungjoo Lee
SKKU (Sungkyunkwan Univ)
Verified email at skku.edu
Title
Cited by
Cited by
Year
Layer-controlled CVD growth of large-area two-dimensional MoS 2 films
J Jeon, SK Jang, SM Jeon, G Yoo, YH Jang, JH Park, S Lee
Nanoscale 7 (5), 1688-1695, 2015
4082015
Vertical Si-Nanowire-Type Tunneling FETs With Low Subthreshold Swing () at Room Temperature
R Gandhi, Z Chen, N Singh, K Banerjee, S Lee
IEEE Electron Device Letters 32 (4), 437-439, 2011
3652011
A platform for large‐scale graphene electronics–CVD growth of single‐layer graphene on CVD‐grown hexagonal boron nitride
M Wang, SK Jang, WJ Jang, M Kim, SY Park, SW Kim, SJ Kahng, JY Choi, ...
Advanced Materials 25 (19), 2746-2752, 2013
2782013
Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic
J Shim, S Oh, DH Kang, SH Jo, MH Ali, WY Choi, K Heo, J Jeon, S Lee, ...
Nature communications 7 (1), 1-8, 2016
2632016
Dye-Sensitized MoS2 Photodetector with Enhanced Spectral Photoresponse
SH Yu, Y Lee, SK Jang, J Kang, J Jeon, C Lee, JY Lee, H Kim, E Hwang, ...
ACS nano 8 (8), 8285-8291, 2014
2602014
Ge-photodetectors for Si-based optoelectronic integration
J Wang, S Lee
Sensors 11 (1), 696-718, 2011
2482011
High‐performance transition metal dichalcogenide photodetectors enhanced by self‐assembled monolayer doping
DH Kang, MS Kim, J Shim, J Jeon, HY Park, WS Jung, HY Yu, CH Pang, ...
Advanced Functional Materials 25 (27), 4219-4227, 2015
2292015
An ultrahigh‐performance photodetector based on a perovskite–transition‐metal‐dichalcogenide hybrid structure
DH Kang, SR Pae, J Shim, G Yoo, J Jeon, JW Leem, JS Yu, S Lee, B Shin, ...
Advanced Materials 28 (35), 7799-7806, 2016
2192016
Surface group modification and carrier transport properties of layered transition metal carbides (Ti 2 CT x, T:–OH,–F and–O)
S Lai, J Jeon, SK Jang, J Xu, YJ Choi, JH Park, E Hwang, S Lee
Nanoscale 7 (46), 19390-19396, 2015
2152015
CMOS-Compatible Vertical-Silicon-Nanowire Gate-All-Around p-Type Tunneling FETs With-mV/decade Subthreshold Swing
R Gandhi, Z Chen, N Singh, K Banerjee, S Lee
IEEE Electron Device Letters 32 (11), 1504-1506, 2011
1992011
High‐Performance 2D Rhenium Disulfide (ReS2) Transistors and Photodetectors by Oxygen Plasma Treatment
J Shim, A Oh, DH Kang, S Oh, SK Jang, J Jeon, MH Jeon, M Kim, C Choi, ...
Advanced Materials 28 (32), 6985-6992, 2016
1862016
Plasma-treated thickness-controlled two-dimensional black phosphorus and its electronic transport properties
J Jia, SK Jang, S Lai, J Xu, YJ Choi, JH Park, S Lee
ACS nano 9 (9), 8729-8736, 2015
1482015
MXene Electrode for the Integration of WSe2 and MoS2 Field Effect Transistors
J Xu, J Shim, JH Park, S Lee
Advanced Functional Materials 26 (29), 5328-5334, 2016
1432016
Controllable nondegenerate p-type doping of tungsten diselenide by octadecyltrichlorosilane
DH Kang, J Shim, SK Jang, J Jeon, MH Jeon, GY Yeom, WS Jung, ...
ACS nano 9 (2), 1099-1107, 2015
1422015
A High‐Performance WSe2/h‐BN Photodetector using a Triphenylphosphine (PPh3)‐Based n‐Doping Technique
SH Jo, DH Kang, J Shim, J Jeon, MH Jeon, G Yoo, J Kim, J Lee, GY Yeom, ...
Advanced Materials 28 (24), 4824-4831, 2016
1252016
High quality ultra thin CVD HfO/sub 2/gate stack with poly-Si gate electrode
SJ Lee, HF Luan, WP Bai, CH Lee, TS Jeon, Y Senzaki, D Roberts, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
1242000
High Quality Ta~ 2O~ 5 Gate Dielectrics with T~ o~ x~,~ e~ q< 10AngstromA
HF Luan, SJ Lee, CH Lee, SC Song, YL Mao, Y Senaki, D Roberts, ...
International Electron Devices Meeting, 141-144, 1999
1241999
Germanium pMOSFETs with Schottky-barrier germanide S/D, high-/spl kappa/gate dielectric and metal gate
S Zhu, R Li, SJ Lee, MF Li, A Du, J Singh, C Zhu, A Chin, DL Kwong
IEEE Electron device letters 26 (2), 81-83, 2005
1232005
Chip-level thermoelectric power generators based on high-density silicon nanowire array prepared with top-down CMOS technology
Y Li, K Buddharaju, N Singh, GQ Lo, SJ Lee
IEEE Electron Device Letters 32 (5), 674-676, 2011
1212011
MOS characteristics of ultra thin rapid thermal CVD ZrO/sub 2/and Zr silicate gate dielectrics
CH Lee, HF Luan, WP Bai, SJ Lee, TS Jeon, Y Senzaki, D Roberts, ...
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000
1202000
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