Structure, electronics, and interaction of hydrogen and oxygen on diamond surfaces SJ Sque, R Jones, PR Briddon Physical review B 73 (8), 085313, 2006 | 311 | 2006 |
Vacancy-impurity complexes and limitations for implantation doping of diamond JP Goss, PR Briddon, MJ Rayson, SJ Sque, R Jones Physical Review B 72 (3), 035214, 2005 | 191 | 2005 |
Donor and acceptor states in diamond JP Goss, PR Briddon, R Jones, S Sque Diamond and related materials 13 (4-8), 684-690, 2004 | 170 | 2004 |
The transfer doping of graphite and graphene SJ Sque, R Jones, PR Briddon physica status solidi (a) 204 (9), 3078-3084, 2007 | 127 | 2007 |
Shallow donors in diamond: chalcogens, pnictogens, and their hydrogen complexes SJ Sque, R Jones, JP Goss, PR Briddon Physical Review Letters 92 (1), 017402, 2004 | 102 | 2004 |
Boron-hydrogen complexes in diamond JP Goss, PR Briddon, SJ Sque, R Jones Physical Review B 69 (16), 165215, 2004 | 58 | 2004 |
The vacancy–nitrogen–hydrogen complex in diamond: a potential deep centre in chemical vapour deposited material JP Goss, PR Briddon, R Jones, S Sque Journal of Physics: Condensed Matter 15 (39), S2903, 2003 | 56 | 2003 |
Impact of donor traps on the 2DEG and electrical behavior of AlGaN/GaN MISFETs G Longobardi, F Udrea, S Sque, GAM Hurkx, J Croon, E Napoli, J Šonský IEEE electron device letters 35 (1), 27-29, 2013 | 53 | 2013 |
First-principles study of C60 and C60F36 as transfer dopants for p-type diamond SJ Sque, R Jones, JP Goss, PR Briddon, S Öberg Journal of Physics: Condensed Matter 17 (2), L21, 2004 | 42 | 2004 |
Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures M Hajłasz, J Donkers, SJ Sque, SBS Heil, DJ Gravesteijn, FJR Rietveld, ... Applied Physics Letters 104 (24), 2014 | 31 | 2014 |
Hydrogenation and oxygenation of the (100) diamond surface and the consequences for transfer doping SJ Sque, R Jones, PR Briddon physica status solidi (a) 202 (11), 2091-2097, 2005 | 30 | 2005 |
Carbon nanotubes and their interaction with the surface of diamond SJ Sque, R Jones, S Öberg, PR Briddon Physical Review B 75 (11), 115328, 2007 | 20 | 2007 |
Ab initio study of CsI and its surface RM Ribeiro, J Coutinho, VJB Torres, R Jones, SJ Sque, S Öberg, ... Physical Review B 74 (3), 035430, 2006 | 18 | 2006 |
High-voltage GaN-HEMT devices, simulation and modelling S Sque 43rd European Solid-State Device Research Conference (ESSDERC 2013 …, 2013 | 16 | 2013 |
Transfer doping of diamond: The use of C60 and C60F36 to effect p-type surface conductivity SJ Sque, R Jones, S Öberg, PR Briddon Physica B: Condensed Matter 376, 268-271, 2006 | 14 | 2006 |
Modelling 2DEG charges in AlGaN/GaN heterostructures G Longobardi, F Udrea, S Sque, J Croon, F Hurkx, E Napoli, J Šonský CAS 2012 (International Semiconductor Conference) 2, 363-366, 2012 | 13 | 2012 |
High-voltage ESD protection device with fast transient reaction and high holding voltage DW Lai, G de Raad, S Sque, W Peters, T Smedes IEEE Transactions on Electron Devices 66 (7), 2884-2891, 2019 | 11 | 2019 |
The dynamics of surface donor traps in AlGaN/GaN MISFETs using transient measurements and TCAD modelling G Longobardi, F Udrea, S Sque, J Croon, F Hurkx, J Šonský 2014 IEEE International Electron Devices Meeting, 17.1. 1-17.1. 4, 2014 | 11 | 2014 |
Threshold behavior of the drift region: The missing piece in LDMOS modeling SJ Sque, AJ Scholten, ACT Aarts, DBM Klaassen 2013 IEEE International Electron Devices Meeting, 12.7. 1-12.7. 4, 2013 | 11 | 2013 |
Transfer doping of diamond: Buckminsterfullerene on hydrogenated, hydroxylated, and oxygenated diamond surfaces SJ Sque, R Jones, S Öberg, PR Briddon Journal of Materials Science: Materials in Electronics 17, 459-465, 2006 | 11 | 2006 |