| Comprehensive analysis of retention characteristics in 3-D NAND flash memory cells with tube-type poly-Si channel structure HJ Kang, N Choi, SM Joe, JH Seo, E Choi, SK Park, BG Park, JH Lee 2015 Symposium on VLSI Technology (VLSI Technology), T182-T183, 2015 | 57 | 2015 |
| Diode-type NAND flash memory cell string having super-steep switching slope based on positive feedback SM Joe, HJ Kang, N Choi, M Kang, BG Park, JH Lee IEEE Transactions on Electron Devices 63 (4), 1533-1538, 2016 | 25 | 2016 |
| Characterization of traps in 3-D stacked NAND flash memory devices with tube-type poly-Si channel structure MK Jeong, SM Joe, BS Jo, HJ Kang, JH Bae, KR Han, E Choi, G Cho, ... 2012 International Electron Devices Meeting, 9.3. 1-9.3. 4, 2012 | 23 | 2012 |
| Effect of traps on transient bit-line current behavior in word-line stacked NAND flash memory with poly-Si body HJ Kang, MK Jeong, SM Joe, JH Seo, SK Park, SH Jin, BG Park, JH Lee 2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014 | 19 | 2014 |
| Space Program Scheme for 3-D NAND Flash Memory Specialized for the TLC Design HJ Kang, N Choi, DH Lee, T Lee, S Chung, JH Bae, BG Park, JH Lee 2018 IEEE Symposium on VLSI Technology, 201-202, 2018 | 17 | 2018 |
| Effect of Nitrogen Content in Tunneling Dielectric on Cell Properties of 3-D NAND Flash Cells N Choi, HJ Kang, JH Bae, BG Park, JH Lee IEEE Electron Device Letters 40 (5), 702-705, 2019 | 10 | 2019 |
| Effect of Lateral Charge Diffusion on Retention Characteristics of 3D NAND Flash Cells HN Yoo, B Choi, JW Back, HJ Kang, E Kwon, S Chung, JH Bae, BG Park, ... IEEE Electron Device Letters 42 (8), 1148-1151, 2021 | 9 | 2021 |
| Trap Profiling in Nitride Storage Layer in 3-D NAND Flash Memory Using Retention Characteristics and AC- Method MK Jeong, HJ Kang, SM Joe, SK Park, BG Park, JH Lee IEEE Electron Device Letters 36 (6), 561-563, 2015 | 6 | 2015 |
| Characterization of random telegraph noise generated by process-and cycling-stress-induced traps in 26 nm NAND flash memory BS Jo, HJ Kang, SM Joe, MK Jeong, KR Han, SK Park, BG Park, JH Lee Japanese Journal of Applied Physics 52 (4S), 04CA07, 2013 | 5 | 2013 |
| Bi-Directional Long Short-Term Memory Neural Network Modeling of Data Retention Characterization in 3-D Triple-Level Cell NAND Flash Memory H Jang, C Park, K Nam, H Yun, K Cho, JS Yoon, HC Choi, HJ Kang, ... IEEE Transactions on Electron Devices, 2022 | 4 | 2022 |
| First demonstration of diode-type 3-D NAND flash memory string having super-steep switching slope N Choi, HJ Kang, S Chung, SH Bae, BG Park, JH Lee 2017 Symposium on VLSI Technology, T204-T205, 2017 | 4 | 2017 |
| A new guard-ring technique to reduce coupling noise from through silicon via (TSV) utilizing inversion charge induced by interface charge KD Kim, MK Jeong, SM Cho, HJ Kang, BJ Jun, JB Kim, KS Choi, SY Cha, ... 2013 Symposium on VLSI Technology, T44-T45, 2013 | 4 | 2013 |
| A new read method suppressing effect of random telegraph noise in NAND flash memory by using hysteretic characteristic MK Jeong, SM Joe, HJ Kang, KR Han, G Cho, SK Park, BG Park, JH Lee 2013 Symposium on VLSI Technology, T154-T155, 2013 | 4 | 2013 |
| Analysis of Random Telegraph Noise Characteristics with Two Different Cell States in 3-D NAND Flash Memory N Choi, HJ Kang, JH Lee JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE 19 (2), 153-157, 2019 | 3 | 2019 |
| Reconfigurable Cell String Having FET and Super-Steep Switching Diode Operation in 3D NAND Flash Memory N Choi, HJ Kang, SM Joe, BG Park, JH Lee 2018 IEEE 2nd Electron Devices Technology and Manufacturing Conference (EDTM …, 2018 | 3 | 2018 |
| Characterization of reliability in 3-D NAND flash memory JH Lee, SM Joe, HJ Kang 2014 12th IEEE International Conference on Solid-State and Integrated …, 2014 | 3 | 2014 |
| Optimal Energetic-Trap Distribution of Nano-Scaled Charge Trap Nitride for Wider Vth Window in 3D NAND Flash Using a Machine-Learning Method K Nam, C Park, JS Yoon, H Yun, H Jang, K Cho, HJ Kang, MS Park, J Sim, ... Nanomaterials 12 (11), 1808, 2022 | 2 | 2022 |
| Analysis of clockwise and counter-clockwise hysteresis characteristics in 3-D NAND flash memory cells HJ Kang, N Choi, JH Bae, BG Park, JH Lee IEEE Electron Device Letters 38 (7), 867-870, 2017 | 2 | 2017 |
| Characterization of random telegraph noise generated in the space region in NAND flash memory strings HJ Kang, MK Jeong, SM Joe, BG Park, JH Lee Semiconductor Science and Technology 29 (12), 125001, 2014 | 2 | 2014 |
| Extraction of Interface Trap Density in the Region Between Adjacent Wordlines in NAND Flash Memory Strings HJ Kang, SH Bae, MK Jeong, SM Joe, BG Park, JH Lee IEEE Electron Device Letters 36 (1), 53-55, 2014 | 1 | 2014 |
Jong-Ho LeeDepartment of Electrical and Computer Engineering, Seoul National UniversityVerified email at snu.ac.kr
