Brendan Foran
Brendan Foran
Verified email at Aero.Org
Cited by
Cited by
Chemical pressure and charge-density waves in rare-earth tritellurides
E DiMasi, MC Aronson, JF Mansfield, B Foran, S Lee
Physical Review B 52 (20), 14516, 1995
The effect of interfacial layer properties on the performance of Hf-based gate stack devices
G Bersuker, CS Park, J Barnett, PS Lysaght, PD Kirsch, CD Young, ...
Journal of Applied Physics 100 (9), 2006
Direct observation of complete Fermi surface, imperfect nesting, and gap anisotropy in the high-temperature incommensurate charge-density-wave compound SmTe 3
GH Gweon, JD Denlinger, JA Clack, JW Allen, CG Olson, E DiMasi, ...
Physical review letters 81 (4), 886, 1998
Grazing-incidence small angle x-ray scattering studies of phase separation in hafnium silicate films
S Stemmer, Y Li, B Foran, PS Lysaght, SK Streiffer, P Fuoss, S Seifert
Applied physics letters 83 (15), 3141-3143, 2003
Spectroscopic ellipsometry characterization of HfxSiyOz films using the Cody–Lorentz parameterized model
J Price, PY Hung, T Rhoad, B Foran, AC Diebold
Applied Physics Letters 85 (10), 1701-1703, 2004
Impact of stress on oxygen vacancy ordering in epitaxial thin films
DO Klenov, W Donner, B Foran, S Stemmer
Applied physics letters 82 (20), 3427-3429, 2003
Stability of charge-density waves under continuous variation of band filling in LaTe 2− x Sb x (0⩽ x⩽ 1)
E DiMasi, B Foran, MC Aronson, S Lee
Physical Review B 54 (19), 13587, 1996
Application of metastable phase diagrams to silicate thin films for alternative gate dielectrics
S Stemmer, Z Chen, CG Levi, PS Lysaght, B Foran, JA Gisby, JR Taylor
Japanese journal of applied physics 42 (6R), 3593, 2003
Conventional n-channel MOSFET devices using single layer HfO/sub 2/and ZrO/sub 2/as high-k gate dielectrics with polysilicon gate electrode
Y Kim, G Gebara, M Freiler, J Barnett, D Riley, J Chen, K Torres, JE Lim, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
Interfacial layer-induced mobility degradation in high-k transistors
G Bersuker, J Barnett, N Moumen, B Foran, CD Young, P Lysaght, ...
Japanese journal of applied physics 43 (11S), 7899, 2004
Quasi-two-dimensional metallic character of Sm2Te5 and SmTe3
E DiMasi, B Foran, MC Aronson, S Lee
Chemistry of materials 6 (10), 1867-1874, 1994
Thin dielectric film thickness determination by advanced transmission electron microscopy
AC Diebold, B Foran, C Kisielowski, DA Muller, SJ Pennycook, E Principe, ...
Microscopy and Microanalysis 9 (6), 493-508, 2003
Chemical analysis of HfO2∕ Si (100) film systems exposed to NH3 thermal processing
PS Lysaght, J Barnett, GI Bersuker, JC Woicik, DA Fischer, B Foran, ...
Journal of applied physics 101 (2), 2007
Physicochemical properties of in response to rapid thermal anneal
PS Lysaght, B Foran, G Bersuker, PJ Chen, RW Murto, HR Huff
Applied physics letters 82 (8), 1266-1268, 2003
Distorted square nets of tellurium in the novel quaternary polytelluride K0. 33Ba0. 67AgTe2
X Zhang, J Li, B Foran, S Lee, HY Guo, T Hogan, CR Kannewurf, ...
Journal of the American Chemical Society 117 (42), 10513-10520, 1995
Rationalization and prediction of rare earth selenide superstructures
S Lee, B Foran
Journal of the American Chemical Society 116 (1), 154-161, 1994
Commensurate and incommensurate lattice distortions in dysprosium selenide (DySe1. 84) and rubidium dysprosium selenide (Rb0. 33DySe2. 67)
B Foran, S Lee, MC Aronson
Chemistry of materials 5 (7), 974-978, 1993
Fabrication and electrochemical characterization of single and multi-layer graphene anodes for lithium-ion batteries
G Radhakrishnan, JD Cardema, PM Adams, HI Kim, B Foran
Journal of the Electrochemical Society 159 (6), A752, 2012
Scanning transmission electron microscopy investigations of interfacial layers in HfO2 gate stacks
MP Agustin, G Bersuker, B Foran, LA Boatner, S Stemmer
Journal of applied physics 100 (2), 2006
Oxygen diffusion and reactions in Hf-based dielectrics
LV Goncharova, M Dalponte, DG Starodub, T Gustafsson, E Garfunkel, ...
Applied Physics Letters 89 (4), 2006
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