| Chemical pressure and charge-density waves in rare-earth tritellurides E DiMasi, MC Aronson, JF Mansfield, B Foran, S Lee Physical Review B 52 (20), 14516, 1995 | 234 | 1995 |
| The effect of interfacial layer properties on the performance of Hf-based gate stack devices G Bersuker, CS Park, J Barnett, PS Lysaght, PD Kirsch, CD Young, ... Journal of Applied Physics 100 (9), 2006 | 193 | 2006 |
| Direct observation of complete Fermi surface, imperfect nesting, and gap anisotropy in the high-temperature incommensurate charge-density-wave compound SmTe 3 GH Gweon, JD Denlinger, JA Clack, JW Allen, CG Olson, E DiMasi, ... Physical review letters 81 (4), 886, 1998 | 148 | 1998 |
| Grazing-incidence small angle x-ray scattering studies of phase separation in hafnium silicate films S Stemmer, Y Li, B Foran, PS Lysaght, SK Streiffer, P Fuoss, S Seifert Applied physics letters 83 (15), 3141-3143, 2003 | 125 | 2003 |
| Spectroscopic ellipsometry characterization of HfxSiyOz films using the Cody–Lorentz parameterized model J Price, PY Hung, T Rhoad, B Foran, AC Diebold Applied Physics Letters 85 (10), 1701-1703, 2004 | 115 | 2004 |
| Impact of stress on oxygen vacancy ordering in epitaxial thin films DO Klenov, W Donner, B Foran, S Stemmer Applied physics letters 82 (20), 3427-3429, 2003 | 115 | 2003 |
| Stability of charge-density waves under continuous variation of band filling in LaTe 2− x Sb x (0⩽ x⩽ 1) E DiMasi, B Foran, MC Aronson, S Lee Physical Review B 54 (19), 13587, 1996 | 101 | 1996 |
| Application of metastable phase diagrams to silicate thin films for alternative gate dielectrics S Stemmer, Z Chen, CG Levi, PS Lysaght, B Foran, JA Gisby, JR Taylor Japanese journal of applied physics 42 (6R), 3593, 2003 | 96 | 2003 |
| Conventional n-channel MOSFET devices using single layer HfO/sub 2/and ZrO/sub 2/as high-k gate dielectrics with polysilicon gate electrode Y Kim, G Gebara, M Freiler, J Barnett, D Riley, J Chen, K Torres, JE Lim, ... International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001 | 94 | 2001 |
| Interfacial layer-induced mobility degradation in high-k transistors G Bersuker, J Barnett, N Moumen, B Foran, CD Young, P Lysaght, ... Japanese journal of applied physics 43 (11S), 7899, 2004 | 93 | 2004 |
| Quasi-two-dimensional metallic character of Sm2Te5 and SmTe3 E DiMasi, B Foran, MC Aronson, S Lee Chemistry of materials 6 (10), 1867-1874, 1994 | 83 | 1994 |
| Thin dielectric film thickness determination by advanced transmission electron microscopy AC Diebold, B Foran, C Kisielowski, DA Muller, SJ Pennycook, E Principe, ... Microscopy and Microanalysis 9 (6), 493-508, 2003 | 78 | 2003 |
| Chemical analysis of HfO2∕ Si (100) film systems exposed to NH3 thermal processing PS Lysaght, J Barnett, GI Bersuker, JC Woicik, DA Fischer, B Foran, ... Journal of applied physics 101 (2), 2007 | 77 | 2007 |
| Physicochemical properties of in response to rapid thermal anneal PS Lysaght, B Foran, G Bersuker, PJ Chen, RW Murto, HR Huff Applied physics letters 82 (8), 1266-1268, 2003 | 75 | 2003 |
| Distorted square nets of tellurium in the novel quaternary polytelluride K0. 33Ba0. 67AgTe2 X Zhang, J Li, B Foran, S Lee, HY Guo, T Hogan, CR Kannewurf, ... Journal of the American Chemical Society 117 (42), 10513-10520, 1995 | 63 | 1995 |
| Rationalization and prediction of rare earth selenide superstructures S Lee, B Foran Journal of the American Chemical Society 116 (1), 154-161, 1994 | 61 | 1994 |
| Fabrication and electrochemical characterization of single and multi-layer graphene anodes for lithium-ion batteries G Radhakrishnan, JD Cardema, PM Adams, HI Kim, B Foran Journal of the Electrochemical Society 159 (6), A752, 2012 | 55 | 2012 |
| Commensurate and incommensurate lattice distortions in dysprosium selenide (DySe1. 84) and rubidium dysprosium selenide (Rb0. 33DySe2. 67) B Foran, S Lee, MC Aronson Chemistry of materials 5 (7), 974-978, 1993 | 55 | 1993 |
| Scanning transmission electron microscopy investigations of interfacial layers in HfO2 gate stacks MP Agustin, G Bersuker, B Foran, LA Boatner, S Stemmer Journal of applied physics 100 (2), 2006 | 47 | 2006 |
| Oxygen diffusion and reactions in Hf-based dielectrics LV Goncharova, M Dalponte, DG Starodub, T Gustafsson, E Garfunkel, ... Applied Physics Letters 89 (4), 2006 | 44 | 2006 |
