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WK Chim
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Year
Low-Frequency Noise in Layered ReS2 Field Effect Transistors on HfO2 and Its Application for pH Sensing
W Liao, W Wei, Y Tong, WK Chim, C Zhu
ACS applied materials & interfaces 10 (8), 7248-7255, 2018
562018
Self-anchored catalyst interface enables ordered via array formation from submicrometer to millimeter scale for polycrystalline and single-crystalline silicon
JD Kim, M Kim, L Kong, PK Mohseni, S Ranganathan, J Pachamuthu, ...
ACS applied materials & interfaces 10 (10), 9116-9122, 2018
272018
Ultralow Thermal Conductivity of Single‐Crystalline Porous Silicon Nanowires
Y Zhao, L Yang, L Kong, MH Nai, D Liu, J Wu, Y Liu, SY Chiam, WK Chim, ...
Advanced Functional Materials 27 (40), 1702824, 2017
612017
Damage-Free Smooth-Sidewall InGaAs Nanopillar Array by Metal-Assisted Chemical Etching
L Kong, Y Song, JD Kim, L Yu, D Wasserman, WK Chim, SY Chiam, X Li
ACS nano 11 (10), 10193-10205, 2017
452017
Electrical performance and low frequency noise in hexagonal boron nitride encapsulated MoSe2 dual-gated field effect transistors
W Liao, W Wei, Y Tong, WK Chim, C Zhu
Applied Physics Letters 111 (8), 082105, 2017
262017
pH Sensing and Low-Frequency Noise Characteristics of Low Temperature (400° C) p-Channel SOI Schottky ISFETs
W Liao, W Wei, Y Tong, A Wong, WK Chim, C Zhu
IEEE Electron Device Letters 38 (8), 1146-1149, 2017
152017
Minimizing Isolate Catalyst Motion in Metal-Assisted Chemical Etching for Deep Trenching of Silicon Nanohole Array
L Kong, Y Zhao, B Dasgupta, Y Ren, K Hippalgaonkar, X Li, WK Chim, ...
ACS applied materials & interfaces 9 (24), 20981-20990, 2017
402017
Evidences for redox reaction driven charge transfer and mass transport in metal-assisted chemical etching of silicon
L Kong, B Dasgupta, Y Ren, PK Mohseni, M Hong, X Li, WK Chim, ...
Scientific reports 6, 36582, 2016
442016
Ordered fragmentation of oxide thin films at submicron scale
L Guo, Y Ren, LY Kong, WK Chim, SY Chiam
Nature Communications 7, 13148, 2016
182016
Detrimental effects of oxygen vacancies in electrochromic molybdenum oxide
B Dasgupta, Y Ren, LM Wong, L Kong, ES Tok, WK Chim, SY Chiam
The Journal of Physical Chemistry C 119 (19), 10592-10601, 2015
502015
Nanostructuring of Nickel Hydroxide via a Template Solution Approach for Efficient Electrochemical Devices
L Guo, Y Ren, J Liu, SY Chiam, WK Chim
Small 10 (13), 2611-2617, 2014
152014
Highly conductive and transparent aluminum-doped zinc oxide thin films deposited on polyethylene terephthalate substrates by pulsed laser deposition
LM Wong, SY Chiam, WK Chim, JS Pan, SJ Wang
Thin Solid Films 545, 285-290, 2013
192013
The coloration and degradation mechanisms of electrochromic nickel oxide
Y Ren, WK Chim, L Guo, H Tanoto, J Pan, SY Chiam
Solar Energy Materials and Solar Cells 116, 83-88, 2013
1012013
Band gap, band offsets and dielectric constant improvement by addition of yttrium into lanthanum aluminate
ZQ Liu, WK Chim, SY Chiam, JS Pan, CM Ng
Thin Solid Films 534, 177-182, 2013
52013
The role of ions and reaction sites for electrochemical reversible charge cycling in mesoporous nickel hydroxides
J Liu, Y Ren, B Dasgupta, H Tanoto, HL Seng, WK Chim, SFY Li, ...
Journal of Materials Chemistry A 1 (47), 15095-15101, 2013
142013
Interfacial-layer-free growth of yttrium oxide on germanium by understanding initial surface reactions
ZQ Liu, WK Chim, SY Chiam, JS Pan, SR Chun, Q Liu, CM Ng
Surface Science 606 (21-22), 1638-1642, 2012
72012
Effects of electric field in band alignment measurements using photoelectron spectroscopy
SY Chiam, ZQ Liu, JS Pan, KK Manippady, LM Wong, WK Chim
Surface and Interface Analysis 44 (8), 1091-1095, 2012
72012
Formation of the yttrium/germanium interface: Fermi-level pinning and intermixing at room temperature
ZQ Liu, WK Chim, SY Chiam, JS Pan, CM Ng
Applied Physics Letters 100 (9), 092110, 2012
22012
An interface dipole predictive model for high-k dielectric/semiconductor heterostructures using the concept of the dipole neutrality point
ZQ Liu, WK Chim, SY Chiam, JS Pan, CM Ng
Journal of Materials Chemistry 22 (34), 17887-17892, 2012
272012
Evaluating the use of electronegativity in band alignment models through the experimental slope parameter of lanthanum aluminate heterostructures
ZQ Liu, WK Chim, SY Chiam, JS Pan, CM Ng
Journal of Applied Physics 110 (9), 093701, 2011
62011
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