追蹤
Huije Ryu
Huije Ryu
Samsung Advanced Institute of Technology
在 samsung.com 的電子郵件地址已通過驗證
標題
引用次數
引用次數
年份
Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
J Son, J Kwon, SP Kim, Y Lv, J Yu, JY Lee, H Ryu, K Watanabe, ...
Nature communications 9 (1), 3988, 2018
852018
Tailoring surface properties via functionalized hydrofluorinated graphene compounds
J Son, N Buzov, S Chen, D Sung, H Ryu, J Kwon, SP Kim, S Namiki, J Xu, ...
Advanced Materials 31 (39), 1903424, 2019
282019
Tailoring single-and double-sided fluorination of bilayer graphene via substrate interactions
J Son, H Ryu, J Kwon, S Huang, J Yu, J Xu, K Watanabe, T Taniguchi, E Ji, ...
Nano letters 21 (2), 891-898, 2020
242020
Anomalous Dimensionality‐Driven Phase Transition of MoTe2 in Van der Waals Heterostructure
H Ryu, Y Lee, HJ Kim, SH Kang, Y Kang, K Kim, J Kim, BE Janicek, ...
Advanced Functional Materials 31 (51), 2107376, 2021
192021
Two-dimensional material templates for van der Waals epitaxy, remote epitaxy, and intercalation growth
H Ryu, H Park, JH Kim, F Ren, J Kim, GH Lee, SJ Pearton
Applied Physics Reviews 9 (3), 2022
132022
Multioperation‐mode light‐emitting field‐effect transistors based on van der Waals heterostructure
J Kwon, JC Shin, H Ryu, JY Lee, D Seo, K Watanabe, T Taniguchi, ...
Advanced Materials 32 (43), 2003567, 2020
132020
In Situ Imaging of an Anisotropic Layer-by-Layer Phase Transition in Few-Layer MoTe2
CH Lee, H Ryu, G Nolan, Y Zhang, Y Lee, S Oh, H Cheong, K Watanabe, ...
Nano letters 23 (2), 677-684, 2023
92023
Nucleation and Growth of Monolayer MoS2 at Multisteps of MoO2 Crystals by Sulfurization
Y Jung, H Ryu, H Kim, D Moon, J Joo, SC Hong, J Kim, GH Lee
ACS nano 17 (8), 7865-7871, 2023
72023
Laser‐Induced Phase Transition and Patterning of hBN‐Encapsulated MoTe2
H Ryu, Y Lee, JH Jeong, Y Lee, Y Cheon, K Watanabe, T Taniguchi, ...
Small 19 (17), 2205224, 2023
72023
Fluorinated Graphene Contacts and Passivation Layer for MoS2 Field Effect Transistors
H Ryu, DH Kim, J Kwon, SK Park, W Lee, H Seo, K Watanabe, ...
Advanced Electronic Materials 8 (10), 2101370, 2022
72022
Single-crystalline metallic films induced by van der Waals epitaxy on black phosphorus
Y Lee, H Kim, TK Yun, JC Kim, S Lee, SJ Yang, M Jang, D Kim, H Ryu, ...
Chemistry of Materials 33 (10), 3593-3601, 2021
62021
Thermally induced atomic reconstruction into fully commensurate structures of transition metal dichalcogenide layers
JH Baek, HG Kim, SY Lim, SC Hong, Y Chang, H Ryu, Y Jung, H Jang, ...
Nature materials 22 (12), 1463-1469, 2023
32023
Improved Crystallinity of Graphene Grown on Cu/Ni (111) through Sequential Mobile Hot-Wire Heat Treatment
M Choi, J Baek, H Ryu, H Lee, J Byen, SG Hong, BJ Kim, S Cho, JY Song, ...
Nano letters 22 (13), 5198-5206, 2022
32022
Electrical Modulation of Exciton Complexes in Light-Emitting Tunnel Transistors of a van der Waals Heterostructure
H Ryu, J Kwon, S Yang, K Watanabe, T Taniguchi, YD Kim, J Hone, ...
ACS Photonics 8 (12), 3455-3461, 2021
32021
Quasi-van der Waals Epitaxial Recrystallization of a Gold Thin Film into Crystallographically Aligned Single Crystals
Y Lee, Y Chang, H Ryu, JH Kim, K Watanabe, T Taniguchi, M Kim, ...
ACS Applied Materials & Interfaces 15 (4), 6092-6097, 2022
12022
In-situ Imaging of Anisotropic Layer-by-layer Phase Transition in Few-layer MoTe2
CH Lee, H Ryu, G Nolan, Y Zhang, Y Lee, K Kim, GH Lee, PY Huang
Microscopy and Microanalysis 28 (S1), 2320-2322, 2022
12022
Light‐Emitting Transistors: Multioperation‐Mode Light‐Emitting Field‐Effect Transistors Based on van der Waals Heterostructure (Adv. Mater. 43/2020)
J Kwon, JC Shin, H Ryu, JY Lee, D Seo, K Watanabe, T Taniguchi, ...
Advanced Materials 32 (43), 2070320, 2020
12020
Author Correction: Atomically precise graphene etch stops for three dimensional integrated systems from two dimensional material heterostructures
J Son, J Kwon, SP Kim, Y Lv, J Yu, JY Lee, H Ryu, K Watanabe, ...
Nature communications 9 (1), 4965, 2018
12018
Van der Waals Epitaxially Grown Molecular Crystal Dielectric Sb2O3 for 2D Electronics
H Ryu, H Kim, JH Jeong, BC Kim, K Watanabe, T Taniguchi, GH Lee
ACS nano, 2024
2024
200-mm-wafer-scale integration of polycrystalline molybdenum disulfide transistors
J Kwon, M Seol, J Yoo, H Ryu, DS Ko, MH Lee, EK Lee, MS Yoo, GH Lee, ...
Nature Electronics, 1-9, 2024
2024
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