| 2-kbit Array of 3-D Monolithically-stacked IGZO FETs with Low SS-64mV/dec, Ultra-low-leakage, Competitive μ-57 cm2/V-s Performance and Novel nMOS-Only … U Chand, Z Fang, C Chun-Kuei, Y Luo, H Veluri, M Sivan, LJ Feng, ... 2021 Symposium on VLSI Technology, 1-2, 2021 | 16 | 2021 |
| Stress-memorized HZO for high-performance ferroelectric field-effect memtransistor SH Tsai, Z Fang, X Wang, U Chand, CK Chen, S Hooda, M Sivan, J Pan, ... ACS Applied Electronic Materials 4 (4), 1642-1650, 2022 | 15 | 2022 |
| First Demonstration of Ultra-low Dit Top-Gated Ferroelectric Oxide-Semiconductor Memtransistor with Record Performance by Channel Defect Self-Compensation … CK Chen, Z Fang, S Hooda, M Lal, U Chand, Z Xu, J Pan, SH Tsai, ... 2022 International Electron Devices Meeting (IEDM), 6.1. 1-6.1. 4, 2022 | 7 | 2022 |
| Overcoming Negative nFET VTH by Defect-Compensated Low-Thermal Budget ITO-IGZO Hetero-Oxide Channel to Achieve Record Mobility and Enhancement … S Hooda, CK Chen, M Lal, SH Tsai, E Zamburg, AVY Thean 2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2023 | 6 | 2023 |
| Sub-10nm Ultra-thin ZnO Channel FET with Record-High 561 µA/µm ION at VDS 1V, High µ-84 cm2/V-s and1T-1RRAM Memory Cell Demonstration Memory … U Chand, MMS Aly, M Lal, C Chun-Kuei, S Hooda, SH Tsai, Z Fang, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 5 | 2022 |
| Low-thermal-budget beol-compatible beyond-silicon transistor technologies for future monolithic-3d compute and memory applications A Thean, SH Tsai, CK Chen, M Sivan, B Tang, S Hooda, Z Fang, J Pan, ... 2022 International Electron Devices Meeting (IEDM), 12.2. 1-12.2. 4, 2022 | 3 | 2022 |
| High-Performance Top-Gated and Double-Gated Oxide–Semiconductor Ferroelectric Field-Effect Transistor Enabled by Channel Defect Self-Compensation Effect CK Chen, S Hooda, Z Fang, M Lal, Z Xu, J Pan, SH Tsai, E Zamburg, ... IEEE Transactions on Electron Devices 70 (4), 2098-2105, 2023 | 2 | 2023 |
| Extremely- Scaled Channel Thickness ZnO FET with High Mobility 86 cm2/V-s, Low SS of 83mV/dec and Low Thermal Budget Process (<300°C) U Chand, C Chun-Kuei, M Lal, S Hooda, H Veluri, Z Fang, SH Tsai, ... 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM …, 2022 | 2 | 2022 |
| Anneal-Free HZO-Based Ferroelectric Field-Effect Transistor for Back-End-of-Line-Compatible Monolithic 3D Integration SH Tsai, CK Chen, X Wang, U Chand, S Hooda, E Zamburg, AVY Thean 2022 International Symposium on VLSI Technology, Systems and Applications …, 2022 | 1 | 2022 |
| BEOL Compatible Extremely Scaled Bilayer ITO/IGZO Channel FET with High Mobility 106 cm2/V.s S Hooda, M Lal, C Chun-Kuei, SH Tsai, E Zamburg, AVY Thean 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-4, 2023 | | 2023 |
| Back-End-of-Line-Compatible Anneal-Free Ferroelectric Field-Effect Transistor SH Tsai, Z Li, MMME Phyu, Z Fang, S Hooda, CK Chen, E Zamburg, ... 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | | 2023 |
